MARKING R5S Search Results

BFP650

Contextual Info: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

BFP650

Abstract: BFP650 noise figure AN077 infineon AN077 sdars C166 NF50 BFP650 2.4GHz lna
Contextual Info: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology

germanium transistors NPN

Abstract: BFP420F BFP650F GMA marking marking r5s
Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology

BFP650

Abstract: BGA420 T-25
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology

PH marking code

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

RBS 3000

Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology

RBS 3000

Abstract: 1g28
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology

MV358i

Abstract: MV324I LMV324I LMV358ID
Contextual Info: LMV321 SINGLE, LMV358 DUAL, LMV324 QUAD LOW-VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS SLOS263E – AUGUST 1999 – REVISED JULY 2002 D D D D LMV324 . . . D OR PW PACKAGE TOP VIEW 2.7-V and 5-V Performance No Crossover Distortion Low Supply Current:

Contextual Info: PD-91340A International IÖR Rectifier IRF520NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF520NS • Low-profile through-hole (IRF520NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V

Contextual Info: High High Voltage Voltage Thick ThickFilm FilmResistors Resistors Welwyn Components VRW Series Series •VRW VRW37 meets requirements of BS / EN / IEC 60065 meets the requirements BS / ENsize / ·• VRW37 High working voltage to 10kV inof compact 60065 · IEC

VRW68

Abstract: 1nF CAPACITOR
Contextual Info: High High Voltage Voltage Thick ThickFilm FilmResistors Resistors Welwyn Components VRW Series Series •VRW VRW37 approved to BS / EN / IEC 60065 meets the requirements BS / ENsize / ·s VRW37 High working voltage to 10kV inof compact IEC 60065 · High ohmic range to 68M

IRF540NS

Abstract: IRF540NL
Contextual Info: PD-91342A International Rectifier IÖR IRF540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF540NS • Low-profile through-hole (IRF540NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V

MV324SI

Abstract: mv358i MV324I
Contextual Info: LMV321 SINGLE, LMV358 DUAL, LMV324 QUAD, LMV324S QUAD WITH SHUTDOWN LOW-VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS SLOS263F – AUGUST 1999 – REVISED AUGUST 2002 D D D D D D 2.7-V and 5-V Performance Low Power Shutdown Mode LMV324S No Crossover Distortion

Contextual Info: BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages 3 • Based on Infineon' s reliable high volume Silicon 2 4 1 Germanium technology • High OIP3 and P -1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz

80mAF

Abstract: 6069 marking
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

marking r5s

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

BFP650 noise figure

Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

gummel

Abstract: oscilators BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

BFP650

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

transistor 1T

Abstract: BFP650 equivalent
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

LM 858 IC chip

Abstract: Q65111A3098
Contextual Info: 6-lead in-line MULTILED Enhanced optical Power LED ThinFilm / ThinGaN  Lead (Pb) Free Product - RoHS Compliant LRTB GFUG Released Besondere Merkmale • Gehäusetyp: schwarzes P-LCC-6 Gehäuse zur Kontrasterhöhung (RGB-Displays) und diffuser Silikon-Verguß

Contextual Info: 6-lead in-line MULTILED Enhanced optical Power LED ThinFilm / ThinGaN Lead (Pb) Free Product - RoHS Compliant LRTB GFUG Released Besondere Merkmale Features • Gehäusetyp: schwarzes P-LCC-6 Gehäuse zur Kontrasterhöhung (RGB-Displays) und diffuser Silikon-Verguß