MARKING P1S Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

Contextual Info: SHARP GP1S50/GP1S51V/GP1S52V/GP1S54 General Purpose Photointerrupter G P 1S 50/G P1S 5 1 V G P 1S 52V/G P1S 54 • Features ■ Applications 1. High sensing accuracy Sliit width: 0.5mm 1. O A equipm ent, such as FD D s, printers, 2. Both-sides mounting type: GP1S50 (Case height: 10mm)

9930gm

Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Contextual Info: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter

Contextual Info: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S

Contextual Info: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S

OFL-12

Abstract: SFZ-3A jds optics switch 1 Seiko fc electronic passive components catalog sii Product Catalog
Contextual Info: Fiber Optics Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module The optical communications technology of the next generation will be of increasing importance and extremely

Contextual Info: <p Preliminary Datasheet FUJITSU S e p te m b e r 1996 V ersion 0.8 MB86681 ATM Switch Element SRE-L FM L/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such

C3025LS

Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •  

Contextual Info: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!

marking p1S

Contextual Info: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Contextual Info: DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device RDS ON max ID max TA = +25°C • 2 x N + 2 x P channels in a SOIC package • Low On-Resistance 45mΩ @ VGS = 10V 4.5A • Low Input Capacitance 4A • Fast Switching Speed

E 94733

Abstract: marking p1S E 94733 3
Contextual Info: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Complementary type: BFT92W PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

P2M SCR

Abstract: P0202MN SOT223 MARKING SG P0202EN marking dt1 P0201EN P0201SN P0202NN P0201MN
Contextual Info: / Z T SG S-TH O M SO N raisœi[LICTl lB®S P0201x N P0202xN SENSITIVE GATE SCR FEATURES • It rms = 0.8A > VDRM= 500V to 800V ■ Low Ig t £ 20 nA max to < 200 |iA DESCRIPTION The P0201xN series of SCRs uses a high performance planar PNPN technology. These

p0201

Abstract: P0201MN P0202MN P2M SCR P0202EN P0202NN 0019J P0201EN P0201SN P0202SN
Contextual Info: G ì. SG S-TH O M SO N P0201XN P0202xN ¡u SENSITIVE GATE SCR FEATURES • It rm s = 0 .8 A ■ V drm = 500V to 800V ■ Low Ig t ^ 20 joA max to < 200 jiA DESCRIPTION The P0201xN series of S C R s uses a high performance planar PNPN technology. These parts are intended for general purpose high

P2M SCR

Abstract: P0202EN P0201EN P0201MN P0201NN P0201SN P0202MN P0202NN P0202SN p2m 3x
Contextual Info: P0201xN P0202xN  SENSITIVE GATE SCR FEATURES IT RMS = 0.8A VDRM = 500V to 800V Low IGT ≤ 20 µA max to < 200 µA A K A G DESCRIPTION The P0201xN series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high

BCR108W

Abstract: BFR92W E6327 VSO05561
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

1E70

Contextual Info: THIS COPY IS P R OV I DE D PANDUIT PART NUMBER ON A R E S T R I C T E D WIRE SIZE AWG Imm* P1B-P47 * 22-18 ,5-1,5) P14-P47* 16-14 12,0-2,5) P10-P55 12-10 (4,0-6,01 BASIS AND IS DIMENSIONS ± .0 2 0 ± „015 ± -0 10( ± ,3) A [±>51 B DIA. .75 .07 (19,1) (1,8)

BA892-07F

Abstract: P1s SMD smd marking p1s BA892
Contextual Info: BA892-07F XYs Silicon RF Switching Diode Preliminary data 3
For band switching in TV/VTR tuners up to 2GHz 2 4 1
Very low forward resistance very low insertion loss TSFP-4
small capacitance
Ultra small SMD package for dual diodes 4 3 D 1 1 D 2 2

Contextual Info: bq76PL102 www.ti.com . SLUS887A – DECEMBER 2008 – REVISED OCTOBER 2009 PowerLAN Dual-Cell Li-Ion Battery Monitor With PowerPump™ Cell Balancing

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

Transistor BFT 42

Abstract: VSO05561
Contextual Info: BFR 92W 3 NPN Silicon RF Transistor
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA 2
Complementary type BFT 92 PNP 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR92W Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Pb-free RoHS compliant and halogen-free package with visible leads • Qualification report according to AEC-Q101 available