MARKING P1 TRANSISTOR Search Results

BFR92

Abstract: BFR92A BFR92 transistor transistor p2 marking
Contextual Info: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,

Contextual Info: FCX591 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Part Marking Detail: P1 Complementary Type: FCX491 Capable of 1.0W of Power Dissipation Collector-current 2.0A PNP Power Transistor Electrical Characteristics @ 25OC Unless Otherwise Specified

transistor s parameters noise

Abstract: NPN planar RF transistor 929 marking 23marking
Contextual Info: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings

BFR92R

Abstract: BFR92 transistor bfr92
Contextual Info: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23

Transistor BFR 96

Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
Contextual Info: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1

Contextual Info: DMA26109 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: P1  Basic Part Number

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FCX591 Features • • • • Part Marking Detail: P1 Complementary Type: FCX491 Capable of 1.0W of Power Dissipation Collector-current 2.0A

Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount

LMBT2222AWT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. We declare that the material of product

SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23

MUN2111RT1

Abstract: MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and

MOSFET TRANSISTOR SMD MARKING CODE

Abstract: MOSFET marking smd
Contextual Info: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide

TPA2029NND03-HF

Contextual Info: General Purpose Transistor - TPA2029NND03-HF PNP RoHS Device Halogen Free - + + + + WBFBP-03B Features 0.049(1.25) 0.045(1.15) -PNP Epitaxial Silicon Transistor. 0.022(0.55) 0.018(0.45) 3 -Excellent hFE linearity. 0.049(1.25) 0.045(1.15) -For portable equipment(i.e. Mobile phone,MP3,.

MARKING P1 TRANSISTOR

Abstract: MMBT3906 transistor marking 2a 2A marking transistor transistor MMBT3906 marking code 2A sot-23 2A transistor
Contextual Info: MMBT3906 300mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

MMBT3906

Abstract: marking C10 transistor c10 2A marking MMBT3906 "Small Signal Diode" c10 g sot-23 free transistor
Contextual Info: MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

MMBT3906-HF

Abstract: marking code SS SOT23 transistor marking code SS SOT23 transistor marking code transistor ad 1v MARKING CODE 16 transistor sot23 TRANSISTOR MARKING CODE ss transistor npn 2A sot 23 marking W1 sot23 ss sot23
Contextual Info: General Purpose Transistor MMBT3906-HF PNP RoHS Device Halogen Free Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 2 0.079 (2.00)

BC846AW-G

Contextual Info: Small Signal Transistor BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C

Contextual Info: General Purpose Transistor MMBTA92-G PNP RoHS Device Features SOT-23 -High voltage transistor. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Diagram: 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 1 Base 0.041(1.05) 0.035(0.90) 2 Emitter

1AM c

Abstract: 1AM marking transistor
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

transistor 1am

Abstract: 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

MMBT3904-HF

Abstract: transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING
Contextual Info: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)

TRANSISTOR code marking 1P 3

Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23
Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A

Contextual Info: NPN Epitaxial Planar Transistor Formosa MS FMBT2222AW List List. 1 Package outline. 2