MARKING P1 TRANSISTOR Search Results

transistor s parameters noise

Abstract: NPN planar RF transistor 929 marking 23marking
Contextual Info: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings

BFR92R

Abstract: BFR92 transistor bfr92
Contextual Info: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23

Transistor BFR 96

Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
Contextual Info: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1

Contextual Info: DMA26109 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: P1  Basic Part Number

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FCX591 Features • • • • Part Marking Detail: P1 Complementary Type: FCX491 Capable of 1.0W of Power Dissipation Collector-current 2.0A

MUN2111RT1

Abstract: MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and

MMBT3906-HF

Abstract: marking code SS SOT23 transistor marking code SS SOT23 transistor marking code transistor ad 1v MARKING CODE 16 transistor sot23 TRANSISTOR MARKING CODE ss transistor npn 2A sot 23 marking W1 sot23 ss sot23
Contextual Info: General Purpose Transistor MMBT3906-HF PNP RoHS Device Halogen Free Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 2 0.079 (2.00)

1AM c

Abstract: 1AM marking transistor
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A

Contextual Info: NPN Epitaxial Planar Transistor Formosa MS FMBT2222AW List List. 1 Package outline. 2

125OC

Abstract: FMBT2222 FMBT2222A
Contextual Info: Formosa MS NPN Epitaxial Planar Transistor FMBT2222AW List List. 1 Package outline. 2

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

Contextual Info: IC Transistors SMD Type PNP Silicon Planar Medium Power High Performance Transistor FCX591 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Power Collector dissipation: PC=1W ● Continuous Collector Current: IC=-1A 0.53±0.1

Contextual Info: Transistors IC SMD Type Product specification FCX591 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Power Collector dissipation: PC=1W ● Continuous Collector Current: IC=-1A 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1

NPN/PNP transistor

Abstract: CTLM3410M832D CTLM3410-M832D CTLM3474-M832D CTLM7410-M832D TLM832D
Contextual Info: CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D SURFACE MOUNT DUAL, LOW VCE SAT SILICON TRANSISTORS TLM832D CASE MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ APPLICATIONS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM3410M832D (Dual NPN), CTLM7410-M832D (Dual PNP),

cfy 14 siemens

Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Contextual Info: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5

BS9365

Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

"MARKING CODE P1"

Contextual Info: MMST2222A NPN General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMST2907A MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

MARKING P1 TRANSISTOR

Abstract: TRANSISTOR SMD p1 smd transistor marking p1 FR MARKING SMD TRANSISTOR smd TRANSISTOR marking ku transistor SMD f 833 SMD TRANSISTOR MARKING BR MMBT2222AW X10-4
Contextual Info: Transistors IC SMD Type General Purpose Transistor MMBT2222AW Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75

Contextual Info: Product specification MMBT2222AW Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO

a733 transistor

Abstract: A7333 A733 P C306A Transistor a733 BTA733A3 A733 BTC945A3
Contextual Info: Spec. No. : C306A3 Issued Date : 2003.07.14 Revised Date : 2005.01.03 Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description • The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

marking code 37u

Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907AW List List. 1 Package outline. 2

FMBT2907

Abstract: FMBT2907A FMBT2222 FMBT2222A
Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2

C945 pin spec

Abstract: TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet
Contextual Info: CYStech Electronics Corp. Spec. No. : C204A3 Issued Date : 2003.04.01 Revised Date : 2005.01.03 Page No. : 1 / 5 General Purpose NPN Epitaxial Planar Transistor BTC945A3 Description • The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.