MARKING NW Search Results

KRC231S

Contextual Info: SEMICONDUCTOR KRC231S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NW No. 1 Item Marking Device Mark NW KRC231S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

germanium photodiode PIN

Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Contextual Info: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V

MARKING aep

Contextual Info: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW

marking BSs sot23

Abstract: marking DKs marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon AF and Switching Transistors • • • • BCX42 BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel) Pin Configuration

relais STPI 327

Abstract: relais STPI relais STPI 336 relais STPI 316 relays STPI 310 relays STPI 325
Contextual Info: SOCLES A SOUDER POUR FILS ET C.I. SOLDERING SOCKETS FOR WIRES AND PCB S310S S320S S316S S326S S336S CARACTERISTIQUES GENERALES / GENERAL DATA Visserie: Hardware: Montage: Mounting: Marquage: Marking: Isolant: Socket: Contacts: Contacts: en acier inoxydale non magnétique livrée avec le socle

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

Contextual Info: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

murata SAW

Contextual Info: SAW FILTER FOR JCDMA Tx Murata part number : SAWEN827MAA0F00 fc=827MHz Package Dimensions Specification Item 1.80±0.05 Specif ication -25 to 85°C Dot Marking(φ0.3) N W 1.35±0.05 Nominal Center Frequency(f c) Insertion Loss (824 to 830MHz) 827MHz 3.0dB max.

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

SMBJ20A

Abstract: SMBJ8.5 A 15 SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A
Contextual Info: ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Device Marking Code Breakdown Voltage V(BR) (Volts) at It Min. Test Current @lT(mA) Stand-Off Voltage VWM(Volts) Maximun Reverse Leakage at Vwm Id ( u A ) Max. SMBJ5.0 6.40 10 KD 7.30 KE SMBJ5.0A

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

AT91M40400

Contextual Info: Errata Sheet V3.2 This errata sheet refers to devices with the following marking: AT91M40400 25AC, 25AI or 33AC Internal product reference 55568A • I/O Pads are not 5V Tolerant • One Half-cycle NUB on First Access to a Chip Select Bank • EBI Abort Generation

DIODE a5

Contextual Info: ffl. BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A V 7 4 - A5 3.0 Pin configuration ~2 . 8_ 0.14 0.48 038 1 = ANODE 2 = ANODE 3 = CATHODE _L 3 0.70 0.50 § 1.4 2.6 1.2

MT42L32M32D2

Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

SMBJ8.5CA

Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
Contextual Info: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 600 Watt Peak Power ■ Dimension Dim SMB DO-214AA ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

lt 1778

Abstract: lt 0229 LT1237 LT1237CNW LT1237CSW
Contextual Info: SPECIFICATION NOTICE LT1237 March 1998 The part marking and order number for the 28-lead plastic dual-in-line package PDIP and the wide 28-lead plastic small outline package (SW) of the LT 1237 have been revised as shown. There is no change to the package dimensions. For complete

Contextual Info: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control http://onsemi.com 6 1 PIN CONNECTIONS AND MARKING DIAGRAMS SOT–23L ON/OFF 1 GND 2 BYPASS 3 Features: OFF, no load • • • • • • • • • • Current of 100 mA

MT47H128M8CF-25

Abstract: 8 resistor array 10k smd 103
Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration