MARKING NW Search Results

KRC231S

Contextual Info: SEMICONDUCTOR KRC231S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NW No. 1 Item Marking Device Mark NW KRC231S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

germanium photodiode PIN

Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Contextual Info: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V

MARKING aep

Contextual Info: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW

marking BSs sot23

Abstract: marking DKs marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon AF and Switching Transistors • • • • BCX42 BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel) Pin Configuration

relais STPI 327

Abstract: relais STPI relais STPI 336 relais STPI 316 relays STPI 310 relays STPI 325
Contextual Info: SOCLES A SOUDER POUR FILS ET C.I. SOLDERING SOCKETS FOR WIRES AND PCB S310S S320S S316S S326S S336S CARACTERISTIQUES GENERALES / GENERAL DATA Visserie: Hardware: Montage: Mounting: Marquage: Marking: Isolant: Socket: Contacts: Contacts: en acier inoxydale non magnétique livrée avec le socle

USB Device Testing and Marking

Abstract: FT245R FT2232H
Contextual Info: Future Technology Devices International Ltd. Technical Note TN_114 USB Device Testing and Marking Document Reference No.: FT_000181 Version 1.0 Issue Date: 2009-28-10 A major contributing factor in the success of USB as a peripheral interface has been the close adherence

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

Contextual Info: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

murata SAW

Contextual Info: SAW FILTER FOR JCDMA Tx Murata part number : SAWEN827MAA0F00 fc=827MHz Package Dimensions Specification Item 1.80±0.05 Specif ication -25 to 85°C Dot Marking(φ0.3) N W 1.35±0.05 Nominal Center Frequency(f c) Insertion Loss (824 to 830MHz) 827MHz 3.0dB max.

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

SMBJ20A

Abstract: SMBJ8.5 A 15 SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A
Contextual Info: ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Device Marking Code Breakdown Voltage V(BR) (Volts) at It Min. Test Current @lT(mA) Stand-Off Voltage VWM(Volts) Maximun Reverse Leakage at Vwm Id ( u A ) Max. SMBJ5.0 6.40 10 KD 7.30 KE SMBJ5.0A

murata SAW

Contextual Info: SAW FILTER FOR CDMA2000 BC0 SC2/BC3 Tx Murata part number : SAWEN827MAA0F00 fc=827MHz Package Dimensions Specification Item 1.80±0.05 Specification -30 to 85°C 25±2°C typ. (9) (8) (7) (6) (10) N W (5) Dot Marking(0.3) 1.35±0.05 Nominal Center Frequency(fc)

AT91M40400

Contextual Info: Errata Sheet V3.2 This errata sheet refers to devices with the following marking: AT91M40400 25AC, 25AI or 33AC Internal product reference 55568A • I/O Pads are not 5V Tolerant • One Half-cycle NUB on First Access to a Chip Select Bank • EBI Abort Generation

monochrome cmos IMAGE SENSOR 2005

Abstract: fq-cr15050f
Contextual Info: CODE READER FQ-CR SERIES Exceptional Reading Performance with Easy Operation Multi Code Reader FQ-CR1 Series 2D Code Reader for Direct Part Marking codes FQ-CR2 Series » Read from everything from paper and labels to metal, PCBs, and glass for a wide range of applications.

FQ-WD002

Abstract: FQ-WN002 fq-cr15050f FQ-D31 W4S1-05B FQ-CR25050F-M FQ-WD020 FQ-CR15100N PDF417 sd ram reader
Contextual Info: CODE READER FQ-CR SERIES Exceptional Reading Performance with Easy Operation Multi Code Reader FQ-CR1 Series 2D Code Reader for Direct Part Marking codes FQ-CR2 Series » Read from everything from paper and labels to metal, PCBs, and glass for a wide range of applications.

IMO TDMA

Abstract: star delta plc IMO TDra imo TDMB imo nexus 5 plc IMO Timer 5A250VAC "cyclic timer" 24v electronic flasher with relay 230v aC PLC
Contextual Info: DIN Timers TD 22.5mm DIN rail mounting Electronic Timers • AC/DC coil operation ■ Multi-time range ■ Multi-function, On-delay, Off-delay and Star/Delta versions ■ Voltage range selectable ■ Marking plate cover Options and ordering codes TD MA DIN rail mount timers

DIODE a5

Contextual Info: ffl. BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A V 7 4 - A5 3.0 Pin configuration ~2 . 8_ 0.14 0.48 038 1 = ANODE 2 = ANODE 3 = CATHODE _L 3 0.70 0.50 § 1.4 2.6 1.2

MT42L32M32D2

Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

SMBJ8.5CA

Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
Contextual Info: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 600 Watt Peak Power ■ Dimension Dim SMB DO-214AA ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package