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    MARKING N5 RF Search Results

    MARKING N5 RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54AC20/SDA-R
    Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) PDF Buy

    MARKING N5 RF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF A MPLIFIER APPLICATIONS Unit in nun 2.1 ±0.1 . High Gain : Gpe=24dB Typ. (f=200MHz) . Low Noise : N F = 2 .OdB(Typ.) (f=200MHz) . Excellent Forward AGC Characteristics _ CM o •n o -H CJ Iin •£> 1ft


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    2SC4249 200MHz) M-15T M-25T 2S04249 PDF

    N5 npn transistor

    Abstract: marking N5 RF marking CODE n5 marking n5 amplifier marking CODE n5 amplifier n5 amplifier MSC3130T1
    Contextual Info: LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistor Surface Mount MSC3130T1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER CASE 318D–03, STYLE 1 SC–59 MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous


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    MSC3130T1 N5 npn transistor marking N5 RF marking CODE n5 marking n5 amplifier marking CODE n5 amplifier n5 amplifier MSC3130T1 PDF

    bv42 transistor

    Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
    Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


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    FDSS2407 FDSS2407 bv42 transistor bv42 27e5 LM324 injector driver 33E10 marking n9 8-pin PIN diode Pspice model PDF

    TC227

    Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


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    FDSS2407 FDSS2407 TC227 PDF

    MARKING SMD IC CODE

    Abstract: Motorola transistor smd marking codes PSB 21493 Motorola semiconductor smd marking codes MARKING SMD IC CODE 10 pin PEB 22622 SOCRATES ef 16 transformer ic SMD MARKING CODE ad 5.9 PEF 22622 EPCOS B82793
    Contextual Info: Inductors for Telecommunications Data Sheet Collection 2002 Inductors for Telecommunications The race on the digital information highway is already underway. Growing data traffic volumes are demanding increasingly higher transmission rates. And multimedia services, such as radio and television on the Internet, audio and video streaming, videoconferencing, video-on-demand, e-commerce, etc. require data speeds that far outstrip the rates used by analog technology. Only digital


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    PDF

    SIRENZA MARKING

    Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with


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    NGA-586 NGA-586 EDS-101105 SIRENZA MARKING PDF

    Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with


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    NGA-586 NGA-586 EDS-101105 PDF

    marking N5 mmic

    Abstract: NGA589
    Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance


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    NGA-589 NGA589 EDS-100376 marking N5 mmic PDF

    145151

    Abstract: IMI145151 Motorola MC145151 14-Bit-N resitor MC145151 resitor 180 pll synthesizer 16 pin dip n925
    Contextual Info: IMI145151 FREQUENCY SYNTHESIZER CMOS LSI PARALLEL PROGRAMMED PLL FREQUENCY SYNTHESIZER PRODUCT DESCRIPTION PRODUCT FEATURES The IMI145151 is a member of a family of phaselock loop synthesizer ICs from International Microcircuits. The IMI145151 is an improved


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    IMI145151 IMI145151 MC145151 IMI145151xYB IMI145151xQB 145151xPB IMI145151xPB 145151 Motorola MC145151 14-Bit-N resitor resitor 180 pll synthesizer 16 pin dip n925 PDF

    LE-12T

    Abstract: marking N5 mmic marking n5 amplifier
    Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier • High Gain : 19.2 dB at 1950 MHz • Operates From Single Supply • Low Thermal Resistance Package T -20 Applications LE T ORL -30 6 • PA Driver Amplifier • Cellular, PCS, GSM, UMTS


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    NGA-589 NGA589 EDS-100376 LE-12T marking N5 mmic marking n5 amplifier PDF

    MARKING N13 RF

    Abstract: marking jv filter 145151
    Contextual Info: IMI145151 FREQUENCY S YNTHESIZER CMOS LSI PARALLEL PROGRAMMED PLL FREQUENCY SYNTHESIZER PRODUCT DESCRIPTION PRODUCT FEA TURES The IM1145151 is a m em ber of a fam ily of phaselock loop synthesizer ICs from International Microcircuits. The IM1145151 is an im proved


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    IMI145151 IM1145151 MC145151 145151xPB IMI145151xPB MARKING N13 RF marking jv filter 145151 PDF

    LM2324

    Contextual Info: LMX2324 PLLatinum 2.0 GHz Frequency Synthesizer for RF Personal Communications General Description Features The LMX2324 is a high performance frequency synthesizer with integrated 32/33 dual modulus prescaler designed for RF operation up to 2.0 GHz. Using a proprietary digital


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    LMX2324 DCS-1800, 9-Aug-2002] LM2324 PDF

    512MB NOR FLASH

    Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
    Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on


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    S72WS-N 16-bit 200rranty 512MB NOR FLASH BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE PDF

    512MB NOR FLASH

    Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
    Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2


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    S72WS-N 16-bit 512MB NOR FLASH BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE PDF

    TMC22291

    Abstract: marking N10A N10B C22290 marking N8B BPP1
    Contextual Info: P A I R C H I I - D www.fairchildsemi.com SEMICONDUCTOR TMC22291 Di gi t al V i d e o E n c o d e r w i t h M a c r o v i s i o n Copy P r o t e c t i o n Features 9-Bit D/A Converters For Video Reconstruction Supports NTSC And PAL Standards Simultaneous S-Video Y/C Output .


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    TMC22291 CCIR-601 TMC22291 marking N10A N10B C22290 marking N8B BPP1 PDF

    Contextual Info: SGM2026 Quad, Low Power, Low Dropout, 200mA, RF-Linear Regulator GENERAL DESCRIPTION FEATURES The SGM2026 is a quad, low-power, low-dropout, CMOS ● Low Output Noise: 30µVRMS TYP 10Hz to 100kHz linear voltage regulator that operates from 3.3V to 5.5V ● Low Dropout Voltage:


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    SGM2026 200mA, SGM2026 100kHz) 200mA 220mV PDF

    Contextual Info: SGM2025 Quad, Low Power, Low Dropout, 200mA, RF-Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2025 is a quad, low-power, low-dropout, CMOS ● Low Output Noise: 30µVRMS TYP 10Hz to 100kHz linear voltage regulator that operates from 3.3V to 5.5V


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    SGM2025 200mA, SGM2025 100kHz) 200mA 220mV PDF

    VHF-UHF Band Low Noise Amplifier

    Abstract: marking lob
    Contextual Info: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


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    2SC4315 IS21ei 012IGURE VHF-UHF Band Low Noise Amplifier marking lob PDF

    267N

    Contextual Info: P A IR C H II-D www.fairchildsemi.com SEMICONDUCTOR TMC2591 Di gi t al V i d e o E n c o d e r w i t h M a c r o v i s i o n Copy P r o t e c t i o n Features 9-Bit D/A Converters For Video Reconstruction • M acrovision™ Copy Protection Signal Processing


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    TMC2591 267N PDF

    SGM44599

    Abstract: TQFN-16 MAXIMUM ANALOG SWITCH DPDT 30V 44599
    Contextual Info: SGM44599 4Ω, High Speed, Low Voltage Dual, DPDT Analog Switch GENERAL DESCRIPTION FEATURES The SGM44599 is a high-speed, low-voltage, advanced ● Low Voltage Operation: 1.8V to 5.5V dual-independent DPDT ● On-Resistance: 4Ω (TYP) CMOS analog switch that is designed to operate from a


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    SGM44599 SGM44599 300MHz 300MHz) -75dB -100dB TQFN-16 MAXIMUM ANALOG SWITCH DPDT 30V 44599 PDF

    70GHz HEMT Amplifier

    Contextual Info: NLB-300 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers


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    NLB-300 10GHz NLB-300 70GHz HEMT Amplifier PDF

    Contextual Info: SGM2024 Quad, Low Power, Low Dropout, 200mA, RF-Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2024 is a quad, low-power, low-dropout, CMOS ● Low Output Noise: 30µVRMS TYP 10Hz to 100kHz linear voltage regulator that operates from 2.5V to 5.5V


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    SGM2024 200mA, SGM2024 100kHz) 200mA 220mV PDF

    Contextual Info: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers


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    NBB-500 NBB-500 PDF

    MMIC Amplifier Micro-X marking n5

    Abstract: N5 micro-X Package marking N5 mmic
    Contextual Info: NBB-500 RoHS & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers


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    NBB-500 NBB-500 NBB-500-D) MMIC Amplifier Micro-X marking n5 N5 micro-X Package marking N5 mmic PDF