MARKING N5 AMPLIFIER Search Results

n7 transistor

Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

N5 npn transistor

Abstract: marking N5 RF marking CODE n5 marking n5 amplifier marking CODE n5 amplifier n5 amplifier MSC3130T1
Contextual Info: LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistor Surface Mount MSC3130T1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER CASE 318D–03, STYLE 1 SC–59 MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous

marking N5 mmic

Abstract: mmic n5 marking n5 amplifier RF TRANSISTOR 586 EDS-101105 NGA-586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING
Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

NGA-589

Abstract: marking n5 amplifier 6.0 GHZ marking n5 amplifier
Contextual Info: Product Description Stanford Microdevices’ NGA-589 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases

SIRENZA MARKING

Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

NGA-586

Abstract: EDS-101105 marking n5 amplifier marking n5 DBM
Contextual Info: Product Description Stanford Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases

marking N5 mmic

Abstract: NGA589
Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

marking N5 mmic

Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

LE-12T

Abstract: marking N5 mmic marking n5 amplifier
Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier • High Gain : 19.2 dB at 1950 MHz • Operates From Single Supply • Low Thermal Resistance Package T -20 Applications LE T ORL -30 6 • PA Driver Amplifier • Cellular, PCS, GSM, UMTS

Contextual Info: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity

2SA1873

Abstract: 2SC4944
Contextual Info: 2SA1873 TO SH IBA 2 S A 1 873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.110.1 Small Package (Dual Type) High Voltage and High Current •. v ^ — — — K n Vv , k j \j

VHF-UHF Band Low Noise Amplifier

Abstract: marking lob
Contextual Info: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

70GHz HEMT Amplifier

Contextual Info: NLB-300 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

2SJ144

Contextual Info: SILICON P CHANNEL JUNCTION TYPE 2SJ144 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm ANALOG SWITCH APPLICATIONS. 2.1 CONSTANT CURRENT APPLICATIONS. ± 0.1 1.2 5 ± 0 .1 1 IMPEDANCE CONVERTER APPLICATIONS. • High Breakdown Voltage: • High Input Impedance:

Contextual Info: TOSHIBA RN5002 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5002 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 4.6MA.X. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: E-TA THERMAL VARIABLE ATTENUATORS •FEATURES ■APPLICATIONS ● Flat VSWR characteristic to the temperature change. ● Linear attenuation characteristic to temperature fluctuation. ● RoHS compliant. ● Temperature compensation of microwave high power

Contextual Info: THERMAL VARIABLE ATTENUATORS E-TA •FEATURES ■APPLICATIONS ● Flat VSWR characteristic to the temperature change. ● Linear attenuation characteristic to temperature fluctuation. ● RoHS compliant. ● Temperature compensation of microwave high power

Contextual Info: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

MMIC Amplifier Micro-X marking n5

Abstract: N5 micro-X Package marking N5 mmic
Contextual Info: NBB-500 RoHS & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

MMIC Amplifier Micro-X marking n5

Contextual Info: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ • Linear and Saturated Amplifiers

MMIC Amplifier Micro-X marking D

Abstract: GaN Bias 25 watt marking n5 amplifier marking N5 mmic d marking Micro-X GaN amplifier marking N5 RF nitrogen coupling GHZ micro-X Package HEMT MMIC POWER AMPLIFIER
Contextual Info: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers