MARKING N2C Search Results

smd jsp

Abstract: jpP marking code jsp marking BAS19 BAS20 BAS21 BAS21 on JPp smd marking code SOT23
Contextual Info: Philips Semiconductors Product specification General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns BAS19; BAS20; BAS21 MARKING PINNING MARKING CODE TYPE NUMBER PIN DESCRIPTION 1 anode • General application BAS19 JPp

HN2C10FU

Contextual Info: TO SH IBA HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING

2SC5086

Abstract: HN2C10FT C2PP
Contextual Info: TOSHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES Q1/Q2

Contextual Info: TO SHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

HN2C11FU

Contextual Info: TO SH IBA H N2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

512MB NOR FLASH

Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on

Flash MCp nand DRAM 137-ball

Abstract: DA12A marking PP nand sdram mcp
Contextual Info: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2

BAT18

Abstract: IEC134 marking code FV D0EM33S
Contextual Info: • bhSB'îBl D0E4335 SHE « A P X N AMER PHILIPS/DISCRETE BAT18 b7E D SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. QUICK REFERENCE DATA Continuous reverse voltage Forward current d.c.

DA12A

Contextual Info: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2

S13 SMD

Abstract: Diode smd code 30a BBY42 9i21 code S13 smd code marking TV sot23
Contextual Info: • ^53=131 00241*33 bSO H A P X N APIER P H I L I P S / D I S C R E T E BBY42 b?E D y v V.H.F. VARIABLE CAPACITANCE DIODE The BBY42 is a variable capacitance diode in a microminiature plastic envelope SOT-23. It is intended fo r use in v.h.f. TV tuners and C ATV applications using SMD technology.

Contextual Info: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2

JH MARKING CODE SCHOTTKY DIODE

Abstract: DIODE B44 sot sot-23 marking 7z MARKING CODE L4P l4p diode marking B44 MARKING 12p SOT-23 ,MARKING 12p SOT-23 12p sot-23 bat54j
Contextual Info: ?110flab 0 0 b ö 3 0 S ô71 • P H I N BAT54 SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode w ith an integrated p-n junction protection ring in a micro­ miniature SO T-23 envelope intended fo r surface mounting. The diode features especially a low forward voltage.

Contextual Info: Preliminary Datasheet 3-PIN MICROPROCESSOR RESET CIRCUITS AZ809/AZ810 General Description Features The AZ809/810 microprocessor supervisory circuits can be used to monitor the power supplies in microprocessor and digital systems. They provide a reset to the

S71NS064NA0

Abstract: A-DQ15 NS064N S29NS-N S71NS-N
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)

AZ810NLTR

Abstract: marking n2c sot AZ809NLTR markingn2csot
Contextual Info: Preliminary Datasheet 3-PIN MICROPROCESSOR RESET CIRCUITS AZ809/AZ810 General Description Features The AZ809/810 microprocessor supervisory circuits can be used to monitor the power supplies in microprocessor and digital systems. They provide a reset to the

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

triac with snubber

Abstract: RF transistor W2W TRIAC RCA Westinghouse SCR handbook BATTERY CHARGER SCR ZO 607 TRIAC 11Z13 TRIAC zo 607 MA AC 220v fan motor speed control triac bt136 220v dimmer light bt139
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

SN7404

Abstract: 1 microfarad tantalum capacitor
Contextual Info: TDC1012 TDC1016 Video Speed D/A Converter DA 10-Bit, 20 Msps Description Features The TDC1016 is a bipolar monolithic digital-to-analog converter which can convert digital data into an analog voltage at rates up to 20 Msps Megasamples Per Second . The device includes an input data register and

VFBGA 112-ball Pb free

Abstract: s29ns-n_00 S29NS-N S30MS-P S75NS128NBF S75NS128NBG S75NS-N MMB112-11
Contextual Info: S75NS-N S29NS-N: MirrorBit 1.8 Volt-only Simultaneous Read/ Write, Burst-mode Multiplexed Flash NOR Interface S30MS-P: ORNAND™ Flash (NAND interface) Multiplexed Synchronous pSRAM S75NS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

ADQ15

Abstract: S71NS256P S71NS128P JEP95
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burstmode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit) and 16 Mb (1 Mb x 16-bit)

Contextual Info: S71NS-P Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode Multiplexed pSRAM 256 Mb 16 Mb x 16-bit and 128 Mb (8 Mb x 16-bit) Flash 64 Mb (4 Mb x 16-bit), and 32 Mb (2 Mb x 16-bit) pSRAM

Contextual Info: S E M IC O N D U C T O R w w w .fairchildsem i.com tm TDC1 01 6 Video Speed D/A Converter 1 0 - B i t , 20 Msps Features Description • • • • • • • • The TDC1016 is a bipolar monolithic digital-to-analog converter which can convert digital data into an analog volt­