MARKING N1L Search Results

marking n1l

Abstract: MOS 20V 0.5A n1l sot-23 TN2106K1 TN2106ND MARKING CODE 028a sot 23 marking 8A sot-23 marking codes N1l transistors sot-23 TN2106 TN2106N3
Contextual Info: TN2106 TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 1.6V TN2106K1 TN2106N3 TN2106ND

n1l sot-23

Abstract: MARKING CODE N1l sot 23
Contextual Info: ^ TN2106 . Supertax ine N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Product marking for SOT-23: Order Number / Package b v dss / ^D S O N ^ G S flh ) b v dgs (max) (max) SOT-231 TO-92 N1L* 60V 2.5a 1.6V

N1L SOT23

Abstract: 1W SOT-23 marking n1l TN2106 TN2106K1 TN2106N3 TN2106ND
Contextual Info: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code

marking n1l

Abstract: mos n-channel SOT-23 TN2106 TN2106K1 TN2106N3 TN2106ND sot-23 MARKING CODE GS 5
Contextual Info: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code

n1l3N

Contextual Info: DATA SH EET NEC SILICON TRANSISTOR ELECTRON DEVICE G N1L3N MEDIUM S P EED SW ITCHING R ESISTO R BUILT-IN TY PE PNP TRAN SISTOR FEA TU RES PACKAGE DIMENSIONS • Resistors B u ilt-in T Y P E in m illim eters 9 C R t = 4 . 7 k 12 R 2 = 10 k f i *2 • - Ï O E

K68A

Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Contextual Info: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

qml-38535

Abstract: CDFP4-F16
Contextual Info: REVISIONS LTR APPROVED D ATE YR -M O -D A DESCRIPTION 1 REV SHEET REV SHEET REV S TA TU S OF SHEETS REV SHEET PM IC N /A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A

1W SOT-23

Abstract: TN2106K1-G
Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN2106K1-G

Abstract: TO-236A 125OC TN2106 TN2106N3-G
Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability

Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

qml-38535

Contextual Info: AMD i l DISTRIBUTION STATEMENT A . Approved for public release; distribution is unliaited. SM D Drawing Num ber 5962-90899 G eneric Part N um ber 28F010 4-663 n AM D 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part nuaber documentation systea see 6 .6 herein . Two

E 13007-1

Abstract: 13007 h3 detail of D 13007 K 13007 he 13007-1 SE 13007 SEC 13005 13005 2 E 13007 sec 13007
Contextual Info: Ml L-H-38510/610 25 FEB R U A R Y 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY SRAM , MONOLITHIC SILICON This specification Is approved for use by all Depart­ ments and Agencies of the Department of Defense.

LHi 1148

Abstract: TZ 1148 5N05 HD v280r f11H1 54S112 FK 505 AM OA41 puls p-f2 PC11
Contextual Info: 2 m J u l-y w m c 23 iw o rm m re M I L - M - 38510/71B 16 Nov ember 1981 MILITARY MIC ROCIRCUIT S, D I G I T A L , SCHOTTKY T T L , F L I P - F L O P S , MONOL I THI C S I L I C O N This s p e c i f i c a t i o n is ments a nd Agencies 1. SPECIFICATION approved

Contextual Info: Pentium II Processor at 350 MHz, 400 MHz, and 450 MHz Datasheet Product Features • Available at 350 MHz, 400 MHz, and 450 MHz frequencies ■ System bus frequency at 100 MHz ■ Binary compatible with applications running on previous members of the Intel

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor