MARKING MT Search Results

117MAABW

Abstract: 117M14BW 117MCCBW
Contextual Info: 3M Grafoplast™ TRASP System Durable Custom Identification For years, 3M has provided a variety of reliable solutions for wire marking and identification. Now 3M is introducing a new manual marking and identification system – from Grafoplast, a 3M company – for creating custom labels for

amplifier for piezo sensor

Abstract: Micronas hall sensor marking
Contextual Info: DATA SHEET MICRONAS Edition Oct. 19, 2004 6251-439-2DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts

MT3S113

Abstract: transistor 2F to-236 4360A
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

jedec package MO-269

Abstract: MT41J128M SSTE32882 micron ddr3 2133 MT18JDF25672PDZ-1G4
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) Options Marking • Operating temperature

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

MT3S111TU

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

MT41K256M32

Abstract: MT41K 256M32 MT41K256M16 MT41K256M32SGB-125M MT41K256M3 MT41K256M MT41K256 MT41K256M16 SPD FBGA DDR3 x32
Contextual Info: Preliminary‡ 8Gb: x32 TwinDie DDR3Lm SDRAM Description TwinDie 1.35V DDR3Lm SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

5962-8868101LA

Abstract: SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA
Contextual Info: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

Entrelec

Abstract: WAGO ALLEN BRADLEY CONTA CLIP abb entrelec 3491000 VE500 phoenix contact wieland sticky Bradley
Contextual Info: Marking Systems VP500 and CMPS 500 Fixtures Description Altech Altech MT 2n - MT 4n, MT 7.5, MT 20, MT 25 Altech MT 5 - MT 15 Altech Group marker G1, G2, G4 ABB / Entrelec ABB Entrelec universal - RC/RCT quarter size ABB Entrelec RC 510A, 610A, 810A ABB Entrelec RC 510B, 610B, 810B”

MT48LCM32B2P

Abstract: MT48LCM32B2 x32s
Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free

MT5C2565EC-25

Contextual Info: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access

smd 5 pin marking a9

Contextual Info: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access

Contextual Info: FREQUENCY VCO 1539.6 – 1614.2 MHz Voltage Controlled Oscillator – VLB 1542 Specification rev-W2 Electrical Specifications Mechanical Parameters Marking F re qu en c y VCO 1539.6 – 1614.2 MHz Voltage Controlled Oscillator – VLB 1542 March 3rd, 2005

Contextual Info: TCS10SPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10SPU Digital-Output Magnetic Sensor Feature Push-Pull Output South-pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (Top View) VCC (Note1) GND2 (Note2) 5 4 PA1 1 VOUT 2

TCS10DPU

Contextual Info: TCS10DPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DPU Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole or North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2) 5

micron ddr3

Contextual Info: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking

MT41J256M16

Abstract: MT41J512M8R MT41J512M8RA-15 MT41J512M8RA MT41J512M8RA-15E MT41J512M8RA15E MT41J512M8
Contextual Info: 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

MT41J256M16HA

Abstract: MT41J256M16 MT41J256M16HA-093 MT41J256M16H MT41J256M16HA-093G d9pzm
Contextual Info: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16

MT48LC4M32B2P

Abstract: x32SDR
Contextual Info: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm)

MT41J256M16

Abstract: MT41J512M8RH K1012 MT41J512M8RH125
Contextual Info: 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

MT41K512M16TNA-125

Abstract: MT41K512M16 MT41K256M16 SPD MT41K512M16TNA 1m x16 SDRAM MICRON MT41K256M16 MT41k micron
Contextual Info: Advance‡ 8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

marking BSs sot23

Abstract: marking DKs marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon AF and Switching Transistors • • • • BCX42 BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel) Pin Configuration

PPAP submission requirement table

Contextual Info: Preliminary‡ 64Mb: x8, x16 SDRAM Features SDR SDRAM MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks Features Options Marking • Configuration – 8 Meg x 8 2 Meg x 8 x 4 banks – 4 Meg x 16 (1 Meg x 16 x 4 banks) • Write recovery (tWR)