MARKING MMBT6517 Search Results

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating

MMBT6517

Abstract: marking mmbt6517
Contextual Info: Transistors SMD Type High Voltage Transistors MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

Contextual Info: Product specification MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • x Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1

MMBT6517LT

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous

msd7000

Abstract: MMBT6517LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage

Contextual Info: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current

Contextual Info: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 350 Vdc Collector – Base Voltage

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 350 Vdc Collector −Base Voltage VCBO 350 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc

Contextual Info: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 350 V Collector − Base Voltage

MMBT6517LT1G

Abstract: MMBT6517LT3G marking code 1z
Contextual Info: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage

Contextual Info: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage

MMBT6517LT1

Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G SOT23 1Z
Contextual Info: MMBT6517LT1 High Voltage Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collectorā - āEmitter Voltage VCEO 350 Vdc Collectorā -āBase Voltage VCBO 350 Vdc

MMBT6517LT1

Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G 300MS
Contextual Info: MMBT6517LT1 High Voltage Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 Vdc Collector − Base Voltage VCBO 350 Vdc Emitter − Base Voltage

NSVMMBT6517LT1G

Contextual Info: MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMBT6517LT1

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous

marking 8b sot-23

Abstract: MMBT6517LT1
Contextual Info: MOTOROLA Order this document by MMBT6517LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

G1 TRANSISTOR SOT 23 PNP

Abstract: transistor marking 2L
Contextual Info: SOT-23 TRANSISTORS continued Darlingtons The following table is a listing of small-signal devices that have very high hpE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1-Base, 2-Emitter, 3-Collector

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the