MMBT6520 Search Results

MMBT6520LT1

Contextual Info: MOTOROLA Order this document by MMBT6520LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6520LT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO

Contextual Info: High Voltage Transistor PNP Silicon MMBT6520LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –350 Vdc Collector–Base Voltage V CBO –350 Vdc

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

MMBT6520LT1G

Abstract: MMBT6520LT3G
Contextual Info: MMBT6520LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage

MMBT6520LT1G

Abstract: MMBT6520LT3G
Contextual Info: MMBT6520LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage

MSD700

Abstract: msd7000 MMBT6520LT1 M24 sot
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon MMBT6520LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –350 Vdc Collector–Base Voltage

MMBT6520LT1

Contextual Info: MMBT6520LT1 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vce= -350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol ating Unit Collector-Base Voltage Vcbo -350 V Collector-Emitter Voltage

Contextual Info: MMBT6520L, MMBT6520L High Voltage Transistor PNP Silicon http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR 3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

marking td sot323

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6520LT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

MMBT6520LT1

Abstract: 6Af surface mount
Contextual Info: ON Semiconductort High Voltage Transistor MMBT6520LT1 PNP Silicon 3 1 2 CASE 318–08, STYLE 6 SOT–23 TO–236AF MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage

Contextual Info: MMBT6520LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6520LT1 PNP Silicon 3 1 2 CASE 318–08, STYLE 6 SOT–23 TO–236AF MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage

MMBT6520LT1

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6520LT1 PNP Silicon MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Base Current IB –250

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

MMBT6520LT1

Contextual Info: MMBT6520LT1 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vce= -350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol ating Unit Collector-Base Voltage Vcbo -350 V Collector-Emitter Voltage

Contextual Info: MMBT6520LT1 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)250 h(FE) Min. Current gain.30

Contextual Info: Transistors SMD Type Product specification MMBT6520 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 1 PNP Silicon 0.55 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High Voltage Transistor

MARKING SMD PNP TRANSISTOR FR

Abstract: SMD 2z marking SMD 2z marking 23 SMD TRANSISTOR FR-5 transistor SMD 2Z FR MARKING SMD TRANSISTOR marking 2Z smd transistor 2Z MMBT6520 417 TRANSISTOR
Contextual Info: Transistors SMD Type High Voltage Transistor MMBT6520 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 1 PNP Silicon 0.55 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High Voltage Transistor

984 sot-23

Contextual Info: ON Semiconductort High Voltage Transistor MMBT6520LT1 PNP Silicon 3 1 2 CASE 318 −08, STYLE 6 SOT−23 TO −236AF MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector−Emitter Voltage VCEO −350 Vdc Collector−Base Voltage VCBO −350 Vdc

MMBT6520LT1

Abstract: MMBT6520LT1G MMBT6520LT3 MMBT6520LT3G
Contextual Info: MMBT6520LT1 High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

DM207

Abstract: OPA343 siemens afe circuit diagram application IL388 MARKING fzt605 top marking DM207 OPA340 PCM3500 PCM3500E
Contextual Info: PCM3500 PCM 350 For most current data sheet and other product information, visit www.burr-brown.com Low Voltage, Low Power, 16-Bit, Mono VOICE/MODEM CODEC TM FEATURES ● POWER SUPPLY: Single +2.7V to +3.6V ● SMALL PACKAGE: SSOP-24 ● 16-BIT DELTA-SIGMA DAC AND ADC

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9