MARKING MA4 Search Results

MA411

Abstract: YG811S09R
Contextual Info: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na

Fuji Electric SM

Abstract: YG811S04
Contextual Info: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol

Fuji Electric SM

Contextual Info: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

Fuji Electric SM

Contextual Info: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

1N4150

Abstract: FDLL4150 MA200
Contextual Info: 1N4150 / FDLL4150 Discrete POWER & Signal Technologies N 1N4150 / FDLL4150 COLOR BAND MARKING DEVICE FDLL4150 1ST BAND 2ND BAND BLACK ORANGE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 High Conductance Ultra Fast Diode

1N4150

Abstract: FDLL4150 MMBD1201-1205
Contextual Info: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.

fairchild 1n4150

Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
Contextual Info: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.

MT42L32M32D2

Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

CKS06

Contextual Info: MIL-PRF-123 MARKING Radials Axials CKS05, -/01 Part Number M123A 01BPC 4R7CC CKS11, -/04 JAN 0710AA 12345 Date and 2 Digit Lot Code FSCM Lot Code and “J” 123A 270F 0710 BUJAP Spec. Number and Modification Code Cap. Value and Tolerance Date Code Manufacturer’s Trademark and TC Code

MT42L16M32

Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

MT42L16M32D1

Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

yg801c

Contextual Info: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na

marking acom

Abstract: MAcom device marking MA4P290CK-287T 44 LS 95 MA4P290STR-287T SOT-23 9A MA4P7447-287T marking MA4P290-1141T MA4P290-287T aCOM marking
Contextual Info: High I-Region Surface Mount Plastic PIN Diodes MA4P290 Series V1 Package Outlines Features • • • • • • Industry Standard Surface Mount Packages Low Distortion Attenuator Diodes Designed for CATV AGC Applications Designed for High Volume Wireless Applications

MA4P290-287T

Contextual Info: High I-Region Surface Mount Plastic PIN Diodes MA4P290 Series V1 Features • • • • • • Outline Drawing Industry Standard Surface Mount Packages Low Distortion Attenuator Diodes Designed for CATV AGC Applications Designed for High Volume Wireless Applications

Contextual Info: MA111 Schottky Barrier Diodes SBD MA4S713 Silicon epitaxial planer type For switching For wave detection circuit Unit : mm 2.1±0.1 1.25±0.1 ● Small S-Mini 4-pin package ● Independent two-element incorporated, enabling high density mount- 2.0±0.1 1.3±0.1

M1B marking

Abstract: ma4s159
Contextual Info: 2SK1259 Switching Diodes MA4S159 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features Small S-Mini type 4-pin package Åú Independent 2.0±0.1 1.3±0.1 ● incorporating of two elements, enabling high-density mounting

MA4360M

Abstract: MA4068L MA4051M MA4130L MA4240H MA4270H MA4160M MA4062M MA4120M MA4180M
Contextual Info: Zener Diodes MA4000 Series Silicon planer type Unit : mm For stabilization of power supply ø0.45 max. ● 5mm pitch insertion possible ● Wide voltage rank which is further subdivided. ● Sharp rising performance ● Wide voltage range : VZ = 2.0 to 39V

MAZ40270L

Abstract: MA4000 Series maz40390 MA4000 MAZ4000 MAZ4020 MAZ40200H MAZ40200L MAZ4022 MAZ40220H
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit: mm For stabilization of power supply • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance

MA4000 Series

Abstract: MA4000 MAZ4000 MAZ4020 MAZ4020-H MAZ4020-L MAZ4022 MAZ4022-H MAZ4022-L
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit : mm For stabilization of power supply • Features 13.0 min. 2.3±0.3 0.2 max. 2.2±0.3 Colored band indicatesVz classification Anode 1st Band 2nd Band 3rd Band Symbol Rating Unit Average forward current

MA4000 Series

Abstract: MA4000 MAZ4000 MAZ4020 MAZ4020-H MAZ4020-L MAZ4022 MAZ4022-H MAZ4022-L MAZ4024
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.45 max. 13 min. • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank

red yellow green zener diode value

Abstract: MA4360 panasonic MA4068 MA4056 MA4360 PANASONIC MA4000 MA4180 DO-34 glass-sealed MA4056N purple purple green zener diode value
Contextual Info: Panasonic Zener Diodes MA4000 N Series Silicon planer type For stabilization of pow er supply 0 0 .4 5 m ax. C o lo r in d ic a tio n o f • Features Unit : mm Vz ra n k c la s s ific a tio n • Extremely low noise voltage from diode (1/3 to 1/10 of our conven­