MARKING MA4 Search Results

MA411

Abstract: YG811S09R
Contextual Info: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na

Fuji Electric SM

Abstract: YG811S04
Contextual Info: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol

Fuji Electric SM

Contextual Info: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

Fuji Electric SM

Contextual Info: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

1N4150

Abstract: FDLL4150 MMBD1201-1205
Contextual Info: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.

fairchild 1n4150

Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
Contextual Info: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.

MT42L32M32D2

Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

MT42L16M32

Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

MT42L16M32D1

Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

yg801c

Contextual Info: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na

marking acom

Abstract: MAcom device marking MA4P290CK-287T 44 LS 95 MA4P290STR-287T SOT-23 9A MA4P7447-287T marking MA4P290-1141T MA4P290-287T aCOM marking
Contextual Info: High I-Region Surface Mount Plastic PIN Diodes MA4P290 Series V1 Package Outlines Features • • • • • • Industry Standard Surface Mount Packages Low Distortion Attenuator Diodes Designed for CATV AGC Applications Designed for High Volume Wireless Applications

MAZ40270L

Abstract: MA4000 Series maz40390 MA4000 MAZ4000 MAZ4020 MAZ40200H MAZ40200L MAZ4022 MAZ40220H
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit: mm For stabilization of power supply • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance

MA4000 Series

Abstract: MA4000 MAZ4000 MAZ4020 MAZ4020-H MAZ4020-L MAZ4022 MAZ4022-H MAZ4022-L
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit : mm For stabilization of power supply • Features 13.0 min. 2.3±0.3 0.2 max. 2.2±0.3 Colored band indicatesVz classification Anode 1st Band 2nd Band 3rd Band Symbol Rating Unit Average forward current

MA4000 Series

Abstract: MA4000 MAZ4000 MAZ4020 MAZ4020-H MAZ4020-L MAZ4022 MAZ4022-H MAZ4022-L MAZ4024
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.45 max. 13 min. • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank

red yellow green zener diode value

Abstract: MA4360 panasonic MA4068 MA4056 MA4360 PANASONIC MA4000 MA4180 DO-34 glass-sealed MA4056N purple purple green zener diode value
Contextual Info: Panasonic Zener Diodes MA4000 N Series Silicon planer type For stabilization of pow er supply 0 0 .4 5 m ax. C o lo r in d ic a tio n o f • Features Unit : mm Vz ra n k c la s s ific a tio n • Extremely low noise voltage from diode (1/3 to 1/10 of our conven­

Contextual Info: Variable Capacitance Diodes MA4X348 MA348 Silicon planar type Unit: mm 2.90+0.02 –0.05 For AFC of FM tuner 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5˚ 0.5R 1 Rating Unit VR 15 V Peak reverse voltage VRM 15 V Junction temperature Tj 150 °C Storage temperature

marking M5D

Contextual Info: Schottky Barrier Diodes SBD MA4ZD14 Silicon epitaxial planar type Unit: mm For high speed switching 2.1±0.1 0.7±0.1 1.3±0.1 4 • Two isolated elements are contained in one package, allowing high-density mounting • Low forward voltage: VF < 0.40 V • S-Mini type 4-pin package

MA marking

Abstract: MA4ZD03
Contextual Info: Schottky Barrier Diodes SBD MA4ZD03 Silicon epitaxial planar type Unit: mm For high speed switching For small type power supply For DC/DC converter 2.1±0.1 0.7±0.1 1.3±0.1 4 • Two isolated elements are contained in one package, allowing high-density mounting

Contextual Info: MA4ZD14 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 2.1±0.1 0.7±0.1 1.3±0.1 4 1 • Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V Repetitive peak reverse voltage V RRM 20 V Forward current Single 100 mA IF Double * 1

Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 3 0.30±0.03 ■ Absolute Maximum Ratings Ta = 25°C

3300PF

Abstract: avx date code 560pF MA50 6305 56uF MA10 MA20 MA30 MA40
Contextual Info: Axial Leads/Ceralam MA10/20/30/40/50/60 HOW TO ORDER MA10 5 E 104 Z A A 1 2 3 4 5 6 7 1 AVX Styles and Sizes: L LD MA10, MA20, MA30, MA40, MA50, MA60 2 Voltages: 50V = 5, 100V = 1, 200V = 2 3 Dielectric: NP0 = A, X7R = C, Z5U = E 4 Capacitance Code 5 Capacitance Tolerance: