MARKING M2B Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER Marking: M2B 3. COLLECTOR

M2B15

Abstract: AT443
Contextual Info: SERIES M 2 p u s h b u t t o n s w it c h e s n rn n ._ ;_ /7 I SUBMINIATURE/SNAP ACTION/WASHABLE/PCB MOU GENERAL SPECIFICATIONS For Silver Contacts For Gold Contacts 1A@ 125V AC 1A @ 30V DC 0.4VA max. @ 28V AC/DC max. Applicable

bq 8050

Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Contextual Info: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管

Contextual Info: Transistors SMD Type PNP General Purpose Amplifier MMBT2907 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Power Dissipation :PD=250mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Current to Continuous :IC=-600mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Product specification MMBT2907 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Power Dissipation :PD=250mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Current to Continuous :IC=-600mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

2907 pnp transistor

Contextual Info: WILLAS FM120-M+ THRU MMBT2907 A LT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features PNP Silicon process design, excellent power dissipation offers • Batch

294N Marking

Abstract: marking code C66 M2B-25 NKK Tilt Switches
Contextual Info: Toggles Series M2 Tilt Tactiles Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers General Specifications Electrical Capacity Resistive Load C Power Level (silver): Logic Level (gold): Logic/Power Level: (gold over silver) Other Ratings

Contextual Info: Toggles Series M2 Electrical Capacity Resistive Load Power Level (silver): Logic Level (gold): Logic/Power Level: (gold over silver) C 1A @ 125V AC or 1A @ 30V DC 0.4VA maximum @ 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V) Combines silver & gold ratings

G225

Abstract: marking M2B 2SK1266
Contextual Info: 2SK1266 Switching Diodes MA123 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Small capacity between pins, Ct 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Rating Symbol

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2

231-112

Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2

3AFY 61201998 R0125 REV A

Abstract: plc wiring diagram for dg synchronisation schematic diagram igbt inverter welding machine ELEVATOR LOGIC CONTROL PLC 3 phase sinus inverters circuit diagram igbt abb variable frequency drive wiring diagram MTBF fit IGBT 1200 3AFE64514482 Motor Control Center wiring diagram abb wiring diagram dol motor starter
Contextual Info: ABB drives Technical guide book 2 Technical guide book ABB drives Technical guide book 3AFE64514482 REV E EFFECTIVE: 26.10.2010 Copyright 2010 ABB. All rights reserved. Technical guide book 3 4 Technical guide book Contents 1. Direct Torque Control explains what DTC is; why and how

FMBT2907

Abstract: FMBT2907A FMBT2222 FMBT2222A
Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2

MBT2907A

Abstract: 2F P marking LMBT2907 MARKING 2907A LMBT2907LT1G 1N916 mbt2907adw1t1g MBT2907
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT2907ADW1T1G Featrues 6 5 z We declare that the material of product compliance with RoHS requirements. 4 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 1 Unit –60 2 3 Vdc Collector–Emitter Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40

LMBT2907ALT1G

Abstract: LMBT2907LT1G 1N916 LMBT2907
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage

Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907LT1 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.3 W(Tamb=25℃) Collector current ICM: -0.6 A -60 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907LT1 TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.6 A ICM: Collector-base voltage

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT2907LT1 TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.6 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907LT1 SOT—23 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol １．０ Power dissipation