m1l transistor
Abstract: m1l SOT-23 M1L marking M1L3 LMBT6428LT1G SOT-23 MARKING D LMBT6429LT3G marking m1l marking M1L sot23 NPN/m1l transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G
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lmbt6428lt1glmbt6429lt1g10000/tapelmbt6429lt3g+103000/tapelmbt6428lt3gm1l transistorm1l sot-23m1l markingm1l3sot-23 marking dmarking m1lmarking m1l sot23npn/m1l transistor
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12085
Abstract: marking Hll
Contextual Info: THICK FILM TEMPERATURE COMPENSATION RESISTOR RGT Exclusive thick film process-results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic Heat conducting ceramic substrate SERIES Digital marking High conductivity plate-on Negative temperature coefficient
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r25rc12085marking hll |
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EWCAP 120-s-003-1-z02
Abstract: EWCAP 120-s-003-1-z01 EWCAP-001 120-S-003-1-Z02 EWCAP-001 TERMINAL 150-T001 15521522 064-S-003-1-Z01 connector EWCAP 120-S-003-1 USCAR-2 rev 5 EWCAP
Contextual Info: 33.30 #0.75 CAVITY OPENING MOLDED-OVER FOR P/N 54200381 ONLY FINAL ASSEMBLY MARKING TO BE LOCATED ON THIS SURFACE B 4 CPA-OPTIONAL PRE-ASSY POSITION MAT'L PA66 GF 35 1.50 (MOLD ( 1.40 ) A ( 0.30 ) WEDGE (TPA) 2 PRE-ASSY POSITION MAT'L PA66 GF 35 17.57
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f5434300---d16k29002am030093+10ewcap 120-s-003-1-z02ewcap 120-s-003-1-z01ewcap-001120-s-003-1-z02ewcap-001 terminal 150-t00115521522064-s-003-1-z01 connectorewcap 120-s-003-1uscar-2 rev 5ewcap
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2N2015
Abstract: marking CF R/NPN/transistor cf 331 2N2016
Contextual Info: M1L-S-19500/248A EL 10 A di-II 1963 SUPERSEDING M IL-S -19500/248(S igC ) 21 June 1962 M ILITARY SPECIFICATION TRANSISTOR, N P N , S ILIC O N TYPES 2N2015, 2N2016 1. SCOPE 1.1 Scope. - This sp e cifica tio n cover* the d eta il requirements fo r si I icon, N P N , transistors
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m1l-s-19500/248a95q0/2482n20152n2016+395g0/248amarking cfr/npn/transistor cf 331
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2C66
Abstract: ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G
Contextual Info: MIL+-195CU/139B ● SUPE3SED1NG KH,-3-195C@39A 31 M1LIT4RI W% TRAJISISMR, TYPE This the tnr, Ar!Jv. 1. SCOPE 1.1 w. trar,ai. for me 1.3 Absoluta-mximm 1.4 Prim.n for .,. W the Nwv. in chaPPer PNP, SILICON JAN-2N1119 k.=” . mmr.awd k and 1s mda- the and
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-195cu/139b-3-195cjan-2n1119re1iabi11t7+11aforceof80z4ths-19500/139b30nsec2c66ml markingt41l1c51maxim country of origin3f6119l4w0532g
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Scans-0016000
Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart
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00d0125mil-s-19500/226bmil-s-19500/226a1n3666u+5mil-s-19500-55achil-s-19500/226bs961-1161-1scans-0016000
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A720 transistor
Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Contextual Info: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.
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2n3906mil-s-19500/530mil-s-195005961-a720+4a720 transistortransistor a7204392 ic equivalent350mw
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7802901JX
Abstract: HD1-15530-8 HD4-15530-8 78029
Contextual Info: D ESC FORM 193 MAY 86 Copyrighted By Its Respective Manufacturer ± 1. SCOPE 1.1 Scope. T h is drawing describes device requirements fo r c la s s B m ic ro c irc u its in accordance with 1 .2 .1 ot M1L-STD-883, “ Pro vision s fo r the use of MIL-STD-883 in conjunction with compliant non-JAN
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7802901jxhd1-15530-878029013xhd4-15530-8+2m38510/5010178029
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7802901JX
Abstract: HD1-15530-8
Contextual Info: D ESC FORM 193 MAY 86 Powered by ICminer.com Electronic-Library Service CopyRight 2003 ± 1. SCOPE 1.1 Scope. T h is drawing describes device requirements fo r c la s s B m ic ro c irc u its in accordance with 1 .2 .1 ot M1L-STD-883, “ Pro vision s fo r the use of MIL-STD-883 in conjunction with compliant non-JAN
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7802901jxhd1-15530-878029013xhd4-15530-8+1m38510/50101
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C4296
Abstract: RT1L AS4C4256 CAH-15 CSR1010
Contextual Info: AUSTIN SEMICONDUCTOR, INC. 256K DRAM AS4C4256 883C 256 X 4 ORAM 4 DRAM X FAST PAGE MODE AVAILABLE AS M ILITA RY S P E C IF IC A T IO N • S M D 5% 2-‘X 6I7 • M1L-STD-S83 PIN ASSIGNMENT TopView) 20-Pin DIP FEATURES • • • • • • • • Industry standard pinout an d tim ing
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as4c4256smd5962-90617mil-std-883175mw+10512-cycle-55cc125uc100ns120nsc4256c4296rt1lcah-15csr1010
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E1A-481
Contextual Info: % f 1 a, t V RT05, RT03, THIN FILM CHIP RESISTORS 1 m % s * \ i v * J i m * FEATURES • High stability «LowTCR • H'9h accuracy ±0.1%,±0.5% M ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70'C Temperature coefficient Delated to 0 load at
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100q-100kq25ppm-33ki1/10w+5--91q100s2--100k100ppm/1/16we1a-481
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e1a481
Abstract: E1A-481
Contextual Info: _% «5*^% * 1 i t a rr -M m ^4 * ^ » £ * % ¿s. e ^@6- 4^ ga»g # FEATURES . • High stability ^ pB| W • RT05, RT03, THIN FILM CHIP RESISTORS 4 % .H ig h accuracy ±0.1%,±0.5% ^ ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70 °C
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m00kq25ppm/100q-33kq--25ppm/+81/10w--100ppm/to--125--91q50ppm/--100kqe1a481e1a-481
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Contextual Info: um Cermet Chip Resistors Series BC AC FEATURES _ • Standard Sizes BC - 1206 AC - 0805 • 1%, 2%, 5% tolerance • ±100PPM/°C, ± 200PPM /°C, ± 300PPM /°C • Zero ohm jumper • Cermet Resistance Element • High Purity Alumina Substrate
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100ppm/200ppm300ppmabkes002+1125mw
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Contextual Info: i HI R DA N G L EP I l 2 _ J _ E CT~I ITEM CODE ECQE21030B3 1 1 21230B3 1 1 21530B3 1 1 21830B3 1 1 22230B3 1 1 22730B3 1 1 23330B3 1 1 23930B3 1 1 24730B3 1 1 25630B3 1 1 26830B3 1 1 28230 B3 1 1 21040B3 1 21240B3 1 1 21540B3 1 1 21840B3 1 1 22240B3 1 1 22740B3
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ecqe21030b321230b321530b321830b3+622230b322730b323330b323930b324730b325630b3
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qml-38535
Abstract: GDFP1-F14 TLC2252 TLC2252A TLC2254 TLC2254A FKB* MARKING
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device class N and plastic small outlines X and Y. Make changes to 1.2.3,1.2.4,1.3, table I, figure 1, figure 2, and table II. 95-07-20 M. A. FRYE B Add device types 03 and 04. Technical and editoral changes
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tlc2254amdq5962-9564004qcatlc2254amjb5962-9564004qda+12tlc2254amwb5962-9564004q2atlc2254amfkbtdd47dfl3s47mqml-38535gdfp1-f14tlc2252tlc2252atlc2254tlc2254afkb* marking
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2272M
Abstract: qml-38535 CDFP2-F10 CQCC1-N20 GDFP1-F10 TLC2272AM TLC2272M
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED Changes IAW NOR 5962-R017-96 96-01-10 M. A. Frye Add device type 02. changes throughout. 96-02-06 M. A. Frye Editorial and technical REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STAND ARD M ICRO CIRC UIT
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5962-r017-96qml-38535nil-hdbk-103mil-hdbic-103+80g47d11b7s2272mcdfp2-f10cqcc1-n20gdfp1-f10tlc2272amtlc2272m
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diode IN457
Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Contextual Info: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September
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mil-s-19500/193c1n4571n4581n459+6mil-s-195005961-a371diode in457jyt markingic 4011 detailsorigin semiconductor rectifier
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Crystal oscillator S1100
Abstract: S1100
Contextual Info: 5aRonix Crystal Clock Oscillator Trae TTL Technical Data SI 100 Series Frequency Range: 20 MHz to 110 MHz 14 size - 20 MHz to 70 MHz Frequency Stability: ±25, ±50 or ±100 ppm over all conditions: calibration tolerance, operating temperature range, input voltage range, load change,
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m1l-std-883il-std-883il-std-202ds-117+2crystal oscillator s1100s1100
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CQCC1-N20
Abstract: UC1835 UC1836 M1L-HDBK-780
Contextual Info: REVISIONS LTR DESCRIPTION Add device type 02. changes th ro ug ho ut. DATE YR-MO-DA Editorial and technical 96-05-16 APPROVED M. A. Frye REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING REV SHEET PREPARED BY RICK C. OFFICER
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tgg47dqg22174mil-hdbk-103td0470a+4cqcc1-n20uc1835uc1836m1l-hdbk-780
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13001 s 6B
Abstract: HA 13001 2 sc 13001 CS 13001 si 13001 54s570 1KTN1 82S130A 54s571 MARKING S1G f4
Contextual Info: M1L-M-38510/204D IM Ü g f f .t t ” — MIL-M-36510/204C 31 J a n u a r y 1984 MILITARY SPECIFICATION MICROCIRCUITS DIGITAL, 2048-BIT S C H O T T K Y , BIPOLAR, P R O G R A M M A B L E R E A D - O N L Y M E M O R Y PRO M , M O N O L I T H I C S I L I C O N
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il-m-38510/204dmil-m-36510/204c2048-bitmil-m-38510+16cdw0/34371ccxp/27014ceco/50364cdk6/18324cfj/07263crp/0793313001 s 6bha 130012 sc 13001cs 13001si 1300154s5701ktn182s130a54s571marking s1g f4
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T 4512 H diode
Abstract: ps 4512 diode diode T 4512 H 1N5551US 1N5550 1N5550US 1N5551 1N5552 1N5554 1N5554US
Contextual Info: This documentation and process conversion measures necessary to comply with this revision shall be completed by 22 Oct 94, | INCH-POUND | I_ i MIL-S-19500/4200 22 July 1994 SUPERSEDING MIL-S-19500/420C 15 June 1992 MI L I T A R Y SP EC IF IC AT IO N
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mil-s-19500/4200mil-s-19500/420c1n55501n5554+111n5550us1n5554usmil-s-19500janhcc1n5551jankca1n55511n5552t 4512 h diodeps 4512 diodediode t 4512 h1n5551us1n5551
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DD345
Abstract: D0345 5962-8864601XA 5962-8864601NA 5962-8864601UA OM-1850-S-T-M OMNIREL 5962-8864601ua 5962-8864
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add vendor CAGE 69210. Add case outline U. Editorial chanqes throuqhout. 90-09-24 W. J. Johnson B Add case outline N. Editorial chanqes throughout. 96-01-16 M. A. Frye C Changes in accordance with NOR 5962-R104-96.
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5962-r104-96dd345d03455962-8864601xa+55962-8864601na5962-8864601uaom-1850-s-t-momnirel 5962-8864601ua5962-8864
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qml-38535
Abstract: CDFP2-F10 CQCC1-N20 GDFP1-F10 003001b
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MODA APPROVED Make change to interim electricals as specified in TABLE In accordance with N.O.R. 5962-R042-96. 96-01-17 M. A. FRYE Add case outline H and device type 02. Make changes to 1.2.2, 1.3, 1.4, TABLE I, and FIGURE 1. ro
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5962-r042-96qml-38535cdfp2-f10cqcc1-n20+2gdfp1-f10003001b
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5962-9689201VKA
Abstract: AD565AS AD565AT AD565ASN CDIP4-T24 qml38535 qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 98-01-22 Raymond Monnin Add case outline “J”. Update boilerplate. - drw REV SHEET REV SHEET REV STATUS OF SHEETS REV A A A A A A A A A A A SHEET 1 2 3 4 5 6 7 8 9 10 11 PREPARED BY Dan Wonnell PMIC N/A
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12-bitt00475962-9689201vkaad565as+5ad565atad565asncdip4-t24qml38535qml-38535
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