MARKING LG SOT23 Search Results

Contextual Info: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA

Contextual Info: PMBT5551 SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 package. QUICK REFERENCE DATA Collector-base voltage open emitter VCBO max. Collector-emitter voltage (open base)

Contextual Info: • bbS3131 0024537 1A7 H A P X N AUER PHILIPS/DISCRETE b?E T> BCV27 BCV47 ;v SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SOT23 envelope. P-N-P complement is BCV26/46. QUICK REFERENCE DATA BCV27 BCV47 Collector-emitter voltage open base

transistor marking LG

Abstract: g2 SOT-23 NPN MARKING CODE c2r sot 23 c2R sot-23 LG SOT23 marking code LG MARKING CODE 028 sot 23 c2r marking MARKING Lg SOT23 LG marking code
Contextual Info: Central semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high

SOT-23 CEB

Abstract: marking code PLI D 795 marking code LG
Contextual Info: Central" CMPT6517 NPN CMPT6520 PNP Semiconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT6517, CMPT6520 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

Q62902-B152-F222

Abstract: Q62902-B156-F222 Q62901-B65 Q62902-B155 a5954 lsp 5502 Q62902-B153-F222 LED LR 3330 Q62901-B62 Q62703-Q2376
Contextual Info: Lumineszenzdioden Light Emitting Diodes SMT-LED SMT-LEDs Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche IV Color of light [mcd] emitting area TOPLED LH T674-KM LH T674-L LH T674-M LH T674-LN LS T670-HK LS T670-J

Q62902-B152-F222

Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter

Contextual Info: Central“ CMPT4401 NPN CMPT4403 PNP Semiconductor Corp. DESCRIPTION: COMPLEMENTARY SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CMPT4401, CMPT4403 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

CMPT3904

Abstract: CMPT3906
Contextual Info: Central" CMPT3904 NPN CMPT3906 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT3904, CMPT3906 types are complementary silicon tran­ sistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

Q62901-B65

Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology

marking code LG

Contextual Info: Central“ Semiconductor Corp. CMPT4033 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT4033 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applications.

sot marking code G4

Abstract: PNP -50V -200mA sot23 C2L SOT23 p7*16 LG SOT23 marking code LG
Contextual Info: Central" Semiconductor Corp. CMPT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface m ount package, designed for high volt­

marking code LG

Contextual Info: Central Semiconductor Corp. CMPT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high volt­ age amplifier applications.

marking code 359 sot-23

Abstract: C2F SOT23 sot-23 Marking LG C2f TRANSISTOR 359 sot23
Contextual Info: Central semiconductor Corp. CMPT2907A DESCRIPTION: PNP SILICON TRANSISTOR The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal

marking code CM

Contextual Info: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 S e m ic o n d u c to r Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.

Contextual Info: CMPT3904E CMPT3906E Central NPN PNP Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906 complementary switching transistors in a SOT-23 surface mount package,

BEV MARKING

Contextual Info: Central" CMPT4401 NPN CMPT4403 PNP Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT4401, CMPT4403 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­ age, designed for small signal general purpose

MAM25S

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.

TRANSISTOR marking 789 code

Contextual Info: Centrar CMPTA29 Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is an NPN silicon darlington transistor manufac­ tured by the epitaxial planar process, epoxy molded in a surface mount package, designed

transistor marking LG

Contextual Info: Central Sem iconductor Corp. CMPT2369 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

marking code LG

Abstract: MARKING CODE c2r sot 23
Contextual Info: TM C e n t r a l Sem i c o n d u c t o r C o r p . CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

sot-23 marking code T25

Abstract: 400V 100MA NPN SOT23 marking C3Z
Contextual Info: Central" CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z

Contextual Info: Central" Semiconductor Corp. CMPT5551 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high volt­ age amplifier applications.

Contextual Info: Central" semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applica­