30NIA Search Results

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator type BH1 5 F B 1 W H F V PACKAGE Fig-1 Plastic Mold BLOCK DIAGRAM Fig.2 TEST CIRCUIT Fig.3 - 8 APPLICATION CIRCUIT Fig.21 FUTURES # # # # # # # # # Output Voltage Accuracy 1.5V±25mV

AN8060

Abstract: 405-v1
Contextual Info: - 148- AN8060 ai -4 U-fe y u m e t t i I E 1* 1 3 ! B i g S i ^ 3 f £ H 'n -y -y b « f é t e ± T„ = 2 5 ’C >12V~- 0.3V 500m W -2 0 ~ +75 C - 5 5 - +150 C • 9 < ~/<r> ~> >J — X ■ U = ^ . i t i [SB& * 1*1 M . L X ^ S . — V cc Po o iii J j W i f c - - -30m A m ax

LCf1

Abstract: sot-25 PDE TK111XX TK111XXS CN001
Contextual Info: TENTATIVE IC DATA SH EET TK111XXS VHk • t • t h t i M Ï Ï Î 50mAB$ 0. 11V • (150mA 5ms D u ty 1 2 .5 % m ^ m ^ lO O r n A ^ ^ S E • m ^ J o n /o ff = y h n - y u - f t # (HIGH ON) , 0 F F 9 (0. 1 M A M ax) • f i y ^ X T T ’ ii > r - - > 3 t^ p r

transistor marking LG

Abstract: g2 SOT-23 NPN MARKING CODE c2r sot 23 c2R sot-23 LG SOT23 marking code LG MARKING CODE 028 sot 23 c2r marking MARKING Lg SOT23 LG marking code
Contextual Info: Central semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high

2SC3004

Contextual Info: HITACHI 2SC3004— SILICON NPN EPITAXIAL HIGH GAIN AMPLIFIER MEDIUM SPEED SWITCHING JEDEC TO-126 MOD. • ABSOLUTE MAXIMUM RATINGS <Ta=25*C) hem Symbol MAXIMUM COLLECTOR DISSIPATION 2SC3004 Unit Collector to base voltage VctWj 30 V Collector 10 emitter voltage

T0-220B

Abstract: pj30 241B BD241 BD241A BD241B 241a
Contextual Info: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO

wireless intercom

Abstract: NE567N FLS2- transistor SE567N SE567D
Contextual Info: Philips Semiconductors Linear Products Product specification Tone decoder/phase-locked loop NE/SE567 PIN CONFIGURATIONS DESCRIPTION The NE/SE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power output circuitry. Its primary function is to drive a load whenever a

TRANSISTOR BI 187

Abstract: BSX39
Contextual Info: BSX39 SILICON PLANAR NPN H IGH -SPEED SA T U R A T E D SWITCH The B SX 39 is a silicon planar epitaxial NPN transistor in Jedec T O -18 metal case. It is designed for very fast switching applications up to 500 mA. ABSOLU TE M A X IM U M R A T IN G S VcBO VcEO

2171.75

Abstract: VM61312 MRP06 wcp01
Contextual Info: VM 61312 V T C In c. Value the Customer 12-CHANNEL, HIGH-PERFORMANCE, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATU R ES Read Gain = 350 V/V MR Bias Current Range = 8 - 20 mA Low Input Noise = 0.55 nV/VHz Maximum Write Current Range = 2 0 -4 0 mA

Contextual Info: Low Power-Loss Voltage Regulators PQ1R30 Series PQ1R30 Series Low Output Current, Compact Surface Mount Type Low Power-Loss Voltage Regulators • Features Outline Dimensions Unit : mm • Com pact surface m ount package(3.4 x 2.2 x 1.2mm) • Low power-loss

Contextual Info: Regulator+Reset IC MM1458 MâïSUMÎ Monolithic IC MM1458 This IC, developed for use in CD-ROM drives, combines a 3V regulator adapted to low power consumption with a much-sought reset with internal delay circuit, set to detect 4.2V. 1. Large output current