MARKING L7S Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

marking code L7S

Abstract: BAR14-1 BAR15-1 BAR16-1 BAR61 BCW66 BFP181 marking L8s
Contextual Info: BAR1. / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  ,  ,  ,  ,  Type BAR14-1 BAR15-1

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

BAR16-1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

ym 238

Abstract: marking code L7S l8s 15 BAR14-1 BAR15-1 BAR16-1 BAR61 0154B
Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAR14-1 BAR15-1

marking code L7S

Abstract: marking L8s marking code 61s BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  , 

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

BAR16-1

Abstract: top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s
Contextual Info: BAR14-1.BAR16-1 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 BAR16-1 3 3 3 1 2 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type

marking L8s

Abstract: marking L7s diode TS SOT23
Contextual Info: BAR 14-1 . BAR 16-1 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics 2 BAR 14-1 BAR 15-1 BAR 16-1 3 3 3 1 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005

BAR61

Abstract: BAR14-1 l8s 15 BAR15-1 BAR16-1 marking L8s marking L7s diode
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

marking L7s

Abstract: marking L7s diode BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

dd3020

Abstract: D241K 104 z5f 104 z5f capacitor DD102 DD-561 DD30-102 CE472 D201K DD30-472
Contextual Info: PHILIPS Series D and S General Purpose Ceramic Disc Capacitors Features • Single Layer Construction • General Purpose and Temperature Compensating Capacitors Available • High Voltages Available Part Number Electrical Parameters • See T able 1 Capacitance Range:

APXV9R20B-C

Abstract: Andrew dm65b-2x2 IEC-332-1 Andrew DB499-K-896-960 MHz ldf4-50a belden Kathrein Antennas SBNH-1D4545A lmr-400 uf APXV9
Contextual Info: Where Technology Meets Innovation Wireless Products Mobile Switching Center Tower Distributed Antenna Systems DAS Mobile Backhaul Antennas and Accessories Coax Cables, Connectors and Support www.kgplogistics.com 800.755.1950 Helping you build the top of the tower from the ground up…

4a2l

Contextual Info: PRELIMINAR in te i 8XC251SA/SB/SP/SQ HIGH-PERFORMANCE CHMOS MICROCONTROLLER Commercial/Express • Real-time and Programmed Wait State Bus Operation ■ User-selectable Configurations: — External Wait States 0-3 wait states ■ Binary-code Compatible with MCS> 51

Contextual Info: FLASH MEMORY 8M 1M x 8/512K x 16 IlilgfctllM Ni MBM29F800T/MBM29F800B • DISTINCTIVE CHARACTERISTICS • Sing le 5.0 V read, write, and erase Minimizes system level power requirements • Com patible with JED EC -standard com m ands Uses same software commands as E2PROMs

S68020

Abstract: future scope of 32 bit barrel shifter 68030 cqfp 68882 PGA68 754for TS68030 68000 thomson TS68882
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68882 CMOS ENHANCED FLOATING-POINT COPROCESSOR DESCRIPTION The TS 68882 enhanced floating-point coprocessor is a full imple­ mentation of the IEEE Standard for Binary Floating-Point Arithme­ tic 754 for use with the THOMSON TS 68000 Family of micropro­

Hall Siemens

Abstract: HYB51471B MARKING AOH
Contextual Info: H Ÿ B b141 fiu J /H Ü L - 5 0 fM i ü /i - /U r 2 5 6 k x i 6 - s i t D y n a m ic R A M i M r ñ n n y i a • M r u n i v i M M Ö K X 1Ö B T I t w i u t t i â k i l u i M m n U Y N A iy ïlU u a t c i n |V !t!V !U h |t5 Íy H u n Vp wr w< ■ h■9r i■n

BTS 308

Abstract: AJ 11P E1S-4 EQUAD marking code a4s ROHM 1004 PM4344 PM6341 PM6344 PM8313
Contextual Info: _ F ^I M r1 # I PM C-Sierra, Inc. I S ta n d a r d P r o d u c t P M 6344 E Q U A D PM C-951013 ISSU E 4 QUAD E1 FRAMER FEATURES • Integrates four full-featured E1 framers and transmitters in a single device for terminating duplex E1 signals. • Software and functionally compatible with the PM6341 E1XC Single E1

Contextual Info: - PRELIMINARY- <£> Feb. 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET MB 8 1 V 16800 A- 60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu M B81V16800A is a fully decoded CMOS Dynamic RAM DRAM that contains

I960 mx

Abstract: 271194 marking A17 DIODE marking ED BDATA23 i960mx 27119
Contextual Info: In te l. MILITARY i960 MM/MX SUPERSCALAR MICROPROCESSOR Implements JIAWG 32-bit ISA Standard i960® MX Processor Only High-Performance 32-bit Superscalar Architecture — Up to Three Instructions per Clock Execution — Five Parallel Execution Units — Load/Store Architecture

Contextual Info: LM H6601 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Texa s In s t r u m e n t s Literature Number: SNOSAK9D t - . * O cto b e r20 Q w Semiconductor LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Am plifier with Shutdown Features

Contextual Info: SEPTEMBER 1988 A F L E S S E Y 'w S e m ico n d u cto rs. ADVANCED INFORMATION P D S P 1 6 4 8 8 SINGLE CHIP 2D CONVOLVER WITH INTEGRAL LINE DELAYS FEATURES FUNCTIONAL DESCRIPTION | Window sizes up to 8 x 8 with a single device • 8 internal line Delays which can be programmed