MARKING L2 SOT23 Search Results
MARKING L2 SOT23 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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MARKING L2 SOT23 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SST502
Abstract: SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
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SST502 SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 | |
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Contextual Info: DRA2123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123E Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: L2 |
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DRA2123E DRC2123E UL-94 DRA2123E0L SC-59A O-236ts. | |
Field-Effect Transistors
Abstract: SOT54variant diodes PACKAGE
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OD110 OD323 OD523 OT54variant OT143B OT143R OT323 OT343N OT343R OT363 Field-Effect Transistors SOT54variant diodes PACKAGE | |
DMN62D1SFBContextual Info: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V |
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DMN62D1SFB DS35252 DMN62D1SFB | |
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Contextual Info: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23 |
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DMP21D0UFB4 AEC-Q101 DS35279 | |
Bfr94a
Abstract: BFT92 BFR90A BFR94
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BFR94A BFT92 AEC-Q101 Bfr94a BFT92 BFR90A BFR94 | |
BFS17A
Abstract: MSB003 E2p transistor E2p device marking Transistor E2P
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BFS17A MSB003 BFS17A MSB003 E2p transistor E2p device marking Transistor E2P | |
UL26Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1. |
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OT-666 OT23-6L OT23-6L OT-666 UL26 | |
USBLC6-2
Abstract: UL26 USBLC6-2P6 marking illustrations
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OT-666 OT23-6L USBLC6-2 UL26 USBLC6-2P6 marking illustrations | |
GSOT05CL-VContextual Info: GSOT05CL-V Vishay Semiconductors Two-Line ESD-Protection in SOT23-3L Features • Two-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT23-3L package • AEC-Q101 qualified |
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GSOT05CL-V OT23-3L OT23-3L AEC-Q101 2002/95/EC 2002/96/EC GSOT05CL-V-G-08 GSOT05CL-V | |
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Contextual Info: LM4041 Precision micropower shunt voltage reference Datasheet - production data Description SOT23-3L The LM4041 is a micropower shunt voltage reference, providing a stable 1.225 V output voltage, with an initial accuracy of 0.1% @ 25 °C and a low temperature coefficient. Available in |
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LM4041 OT23-3L LM4041 OT323-5L OT23-3L OT323-5L DocID018817 | |
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Contextual Info: AH375 Single Phase Hall Effect Latch Features General Description - 2.2V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open drain pre-driver - 25mA maximum sinking output current - Package: SIP3, SOT23 AH375 is an integrated Hall effect latched sensor |
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AH375 AH375 If375 OT23-3L | |
MBB262
Abstract: MBB255 MCD089
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BFR93AR BFT93. BFR93AR 771-BFR93AR215 MBB262 MBB255 MCD089 | |
AOZ6115HIContextual Info: AOZ6115 High Performance, Low RON, SPST Analog Switch General Description Features The AOZ6115 is a high performance single-pole single-throw SPST , low power, TTL-compatible bus switch. ● SOT23 and SC70 5-Lead Package ● 1.65V to 5.5V VCC operation ● |
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AOZ6115 AOZ6115 AOZ6115HI | |
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AOZ6115HI
Abstract: Package Total Harmonic Distortion On Resistance Flatness On Resistance marking code r2d sot23 diode marking code r2d marking code e2 SC70-5 marking AB sot23-5 AOZ6115CI
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AOZ6115 AOZ6115 AOZ6115HI Package Total Harmonic Distortion On Resistance Flatness On Resistance marking code r2d sot23 diode marking code r2d marking code e2 SC70-5 marking AB sot23-5 AOZ6115CI | |
Hall sensor sot23
Abstract: BH W SOT23 Hall sensor sot23 3 pin
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AH375 AH375 Hall sensor sot23 BH W SOT23 Hall sensor sot23 3 pin | |
zener diode marking code C3 sot23
Abstract: Marking C4 SOT23-5 identification code c3 SOT23-5 zener marking code C3 sot23 step up converter with output disconnect zener diode marking 4x sot23-5 package marking c5 marking code 10 sot23 top marking c2 sot23 AP1522
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AP1522 OT23-5 AP1522 OT23-5L zener diode marking code C3 sot23 Marking C4 SOT23-5 identification code c3 SOT23-5 zener marking code C3 sot23 step up converter with output disconnect zener diode marking 4x sot23-5 package marking c5 marking code 10 sot23 top marking c2 sot23 | |
identification code c3 SOT23-5
Abstract: sot23-5 package marking c5 Marking C4 SOT23-5
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AP1522 OT23-5 AP1522 identification code c3 SOT23-5 sot23-5 package marking c5 Marking C4 SOT23-5 | |
C3 MARKING SC-59
Abstract: C3 SC59
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SC-59, OT-23 OT23-5L AH284 500mA SIP-4/SOT89-5 400mA OT23-5 OT23-5L, C3 MARKING SC-59 C3 SC59 | |
BFT92
Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
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BFT92W OT323 BFT92W BFT92. OT323. 711002b BFT92 "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM marking L2 SOT23 6 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Series Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes. |
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LBAS40LT1G BAS40 LBAS40LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40LT1G OT-23 | |
BAS40
Abstract: BAS40-04
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LBAS40LT1G BAS40 LBAS40LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40LT1G OT-23 BAS40-04 | |
BAS40
Abstract: BAS40-04
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LBAS40XLT1G BAS40 LBAS40LT1G LBAS40LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40-06LT1n OT-23 BAS40-04 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected LBAS40LT1G Series S-LBAS40LT1G Series Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LBAS40LT1G S-LBAS40LT1G AEC-Q101 BAS40 LBAS40LT3G LBAS40LT1G S-LBAS40LT1G OT-23 | |