MARKING KN SC70 Search Results

L2SK3018WT1G

Abstract: l2sk3018
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits.

marking KN sc70

Abstract: L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G 3 • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.

marking KN sc70

Contextual Info: UMB4N IMB4A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm • available In ÜMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMB4N and IMB4A; B4 U M B4N (UMT6) I'p V I 0.65 I • • J 0 .6 5 t r( 2r) h iflna c

0BIR

Abstract: marking KN sc70
Contextual Info: DTA144EE DTA144EUA DTA144EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA144EE, DTA144EUA, and DTA144EKA; 16 a built-in bias resistor allows inverter

Contextual Info: UMG2N FMG2A Transistor, digitai, dual, NPN with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMG2N and FMG2A; G2 • package contains two interconnected NPN digital transistors (DTC144EKA)

ic T M 2313

Abstract: T M 2313 SC 2313
Contextual Info: RN2312,2313 RN2312 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1312, RN1313

equivalent of SL 100 NPN Transistor

Abstract: simple SL 100 NPN Transistor SL 100 NPN Transistor transistor C 547 DTC114YUA
Contextual Info: DTC114YE DTC114YUA DTC114YKA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC114YE (EMT3) package marking: DTC114YE, DTC114YUA, and DTC114YKA; 64 a built-in bias resistor allows inverter

b10n

Contextual Info: UM B10N I M B 1 OA Transistor, digitai, dual, PNP, with 2 resistors Dimensions Units : mm Features available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMB10N and IMB10A; B10 UMB10N (UMT6) I t . 3 2 : 0. 1 I 0.65 I package contains two independent

e 634 transistor

Contextual Info: UMA10N FMA10A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMA1 ON and FMA10A; A10 • package contains two interconnected PNP digital transistors (DTA113ZKA)

DTC144GUA

Abstract: transistor marking P8 Transistor Bo 47
Contextual Info: DTC144GE DTC144GUA DTC144GKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTC144GE, DTC144GUA, and DTC144GKA; K26 a built-in bias resistor allows inverter

inverter ic marking H.A

Abstract: DTA144GUA
Contextual Info: DTA144GE DTA144GUA DTA144GKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA144GE, DTA144GUA, and DTA144GKA; K16 a built-in bias resistor allows inverter

1308 ic

Abstract: KA 2309 marking KN sc70 A 1309 KN102-2
Contextual Info: RN1307,1308,1309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 2.1 ±0.1 • With Built-in Eias Resistors in« • Simplify Circuit Design . 1.3 ±0.1 1 0.65 Ö • Reduce a Quantity of Parts and Manufacturing Process

k2676

Contextual Info: UMB2N IMB2A Transistor, digitai, dual, PNP, Wlth 2 resistors Features Dimensions Units: mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB2N (UMT6) package marking: UMB2N and IMB2A; B2 i'p n ' I 0.65 J package contains two independent PNP digital transistors (DTA144EKA),

10M1TR

Abstract: DTC143TKA
Contextual Info: DTC143TE DTC143TUA DTC143TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC143TE (EMT3) package marking: DTC143TE, DTC143TUA, and DTC143TKA; 03 0 .7 + QJ

Contextual Info: TO SH IB A RN1312,RN1313 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R N 1 3 1•7 g mR« N ■w 1 ■3 v 1■3 «r u m u 'm m « r Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 ± 0.1

Contextual Info: T O S H IB A RN2312,RN2313 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2312, RN2313 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ±0.1 • With Built-in Bias Resistors • Simplify Circuit Design

SC-75

Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

Contextual Info: T O SH IB A RN1312,RN1313 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1312, RN1313 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 ± 0.1 With Built-in Bias Resistors Simplify Circuit Design

2SK3018

Contextual Info: 2SK3018W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: *Gate Protection Diode * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits.

Contextual Info: TOSHIBA RN2312,RN2313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN7317 Mr • g mRN7313 « ■w v ■v r u m u 'm Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 With Built-in Bias Resistors

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

ww1 sot-23

Contextual Info: PT7M6218-6250CL/CH /NL | |

marking ww1 sot-23

Abstract: ww1 sot-23
Contextual Info: PT7M6218-6250CL/CH /NL | |