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    MARKING K2 MOSFET Search Results

    MARKING K2 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    ICL7667MTV/883B
    		Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) PDF Buy
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet

    MARKING K2 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTC interface design

    Abstract: AUIR3240STR AUIR3240
    Contextual Info: March 22nd, 2012 Automotive grade AUIR3240S LOW QUIESCENT CURRENT MOSFET DRIVER Features Product Summary Very low quiescent current on state Boost converter with integrated diode Standard level gate voltage Wide operating voltage 4-36V Temperature monitoring with NTC interface


    Original     		AUIR3240S AUIR3240S NTC interface design AUIR3240STR AUIR3240 PDF

    Contextual Info: July 17th, 2012 Automotive grade AUIR3240S LOW QUIESCENT CURRENT MOSFET DRIVER Product Summary Features Very low quiescent current on state Boost converter with integrated diode Standard level gate voltage Wide operating voltage 4-36V Temperature monitoring with NTC interface


    Original     		AUIR3240S AUIR3240S PDF

    NTC 2500

    Abstract: AUIR3240STR AUIR3240S
    Contextual Info: April 2nd, 2012 Automotive grade AUIR3240S LOW QUIESCENT CURRENT MOSFET DRIVER Features Product Summary Very low quiescent current on state Boost converter with integrated diode Standard level gate voltage Wide operating voltage 4-36V Temperature monitoring with NTC interface


    Original     		AUIR3240S AUIR3240S NTC 2500 AUIR3240STR PDF

    AUIR3240

    Abstract: K1 mosfet MARKING NTC RESISTOR AUIR3240STR
    Contextual Info: July 17th, 2012 Automotive grade AUIR3240S LOW QUIESCENT CURRENT MOSFET DRIVER Features Product Summary Very low quiescent current on state Boost converter with integrated diode Standard level gate voltage Wide operating voltage 4-36V Temperature monitoring with NTC interface


    Original     		AUIR3240S AUIR3240S AUIR3240 K1 mosfet MARKING NTC RESISTOR AUIR3240STR PDF

    AUIR3240S

    Abstract: AUIR3240 NTC16 AUIR3240STR ntc-16
    Contextual Info: Automotive grade AUIR3240S LOW QUIESCENT CURRENT MOSFET DRIVER Features • • • • • • Product Summary Very low quiescent current on state Boost converter with integrated diode Standard level gate voltage Wide operating voltage 4-36V Temperature monitoring with NTC interface


    Original     		AUIR3240S AUIR3240S AUIR3240 NTC16 AUIR3240STR ntc-16 PDF

    Contextual Info: Automotive grade AUIR3240S LOW QUIESCENT CURRENT MOSFET DRIVER Features • • • • • • Product Summary Very low quiescent current on state Boost converter with integrated diode Standard level gate voltage Wide operating voltage 4-36V Temperature monitoring with NTC interface


    Original     		AUIR3240S AUIR3240S page10 PDF

    Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET


    Original     		SiA411DJ SC-70 SC-70-6L-Single SiA411DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiB411DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V a -9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB411DK SC-75 SC-75-6L-Single SiB411DK-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiA911DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiA911DJ SC-70 SC-70-6 SiA911DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiA450DJ SC-70 SC-70-6L-Single SiA450DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiA430DJ SC-70 SC-70-6L-Single SiA430DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB412DK SC-75 SC-75-6L-Single SiB412DK-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiB413DK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, f 0.075 at VGS = - 4.5 V -9 0.143 at VGS = - 2.5 V - 7.8 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB413DK SC-75 SC-75-6L-Single SiB413DK-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiA917DJ SC-70 SC-70-6 SiA917DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiA421DJ SC-70 2002/95/EC SC-70-6L-Single SiA421DJ-T1-GE3 11-Mar-11 PDF

    SIA915DJ

    Contextual Info: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiA915DJ SC-70 2002/95/EC SC-70-6 SiA915DJ-T1-GE3 11-Mar-11 PDF

    SIA443DJ

    Contextual Info: New Product SiA443DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 9a 0.063 at VGS = - 2.5 V - 9a 0.088 at VGS = - 1.8 V a -9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiA443DJ SC-70 SC-70-6L-Single SiA443DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21


    Original     		SiB404DK SC-75 2002/95/EC SC-75-6L-Single SiB404DK-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5 0.063 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhaced PowerPAK®


    Original     		SiA912DJ SC-70 SC-70-6 SiA912DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, f RDS(on) (Ω) - 30 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB415DK SC-75 SC-75-6L-Single SiB415DK-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 Qg (Typ.) 1.6 nC • Halogen-free • TrenchFET Power MOSFET


    Original     		SiB911DK SC-75 SC75-6L-Dual SiB911DK-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 11-Mar-11 PDF

    SIA456DJ

    Contextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiA456DJ SC-70 SC-70-6L-Single SiA456DJ-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiA408DJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.036 at VGS = 10 V 4.5 0.039 at VGS = 4.5 V 4.5 0.053 at VGS = 2.5 V 4.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiA408DJ SC-70 2002/95/EC SC-70-6L-Single SiA408DJ-T1-GE3 11-Mar-11 PDF