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    SIB412DK Search Results

    SIB412DK Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIB412DK-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9A SC75-6 Original PDF 9
    SIB412DK-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9A SC75-6 Original PDF 9

    SIB412DK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A2023

    Abstract: 70953 SiB412DK
    Contextual Info: SPICE Device Model SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    sib412dks-70953rev14-may-07a2023+170953 PDF

    SC-75

    Abstract: SiB412DK SiB412DK-T1-GE3 529B
    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


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    sib412dksc-75sc-75-6l-singlesib412dk-t1-ge3+211-mar-11529b PDF

    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original
    sib412dksc-75sc-75-6l-singlesib412dk-t1-ge3+111-mar-11 PDF

    70953

    Abstract: SiB412DK
    Contextual Info: SPICE Device Model SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    sib412dk18-jul-0870953 PDF

    SiB412DK

    Abstract: SC75 SiB412DK-T1-E3
    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


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    sib412dksc-75-6l-singlesib412dk-t1-e308-apr-05+1sc75 PDF

    marking code vishay SILICONIX

    Abstract: marking AAX
    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


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    sib412dksc-75sc-75-6l-singlesib412dk-t1-ge3+52011/65/eu2002/95/ec12-mar-12marking code vishay siliconixmarking aax PDF

    4046 datasheet

    Abstract: AN609 SiB412DK
    Contextual Info: SiB412DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    sib412dkan60919-dec-074046 datasheet PDF

    SC-75

    Abstract: SiB412DK SiB412DK-T1-GE3
    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original
    sib412dksc-75sc-75-6l-singlesib412dk-t1-ge3+108-apr-05 PDF

    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original
    sib412dksc-75sc-75-6l-single2002/95/ec+32011/65/eujs709a02-oct-12 PDF

    marking AAX

    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


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    sib412dksc-75sc-75-6l-singlesib412dk-t1-e3+208-apr-05marking aax PDF

    SC-75

    Abstract: SiB412DK SiB412DK-T1-GE3 529b
    Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


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    sib412dksc-75sc-75-6l-singlesib412dk-t1-ge3+218-jul-08529b PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16si1865dl-t1-e3tr-ndsi1869dh-t1-e3tr-ndsi3861bdv-t1-e3tr-ndsi3865bdv-t1-e3tr-ndsi4720cy-t1-e3tr-ndsi6924aedq-t1-e3tr-ndbs250kl-tr1-e3si6435adq-t1-e3tp0610klsi9435bdy-t1-e3ctsi6467bdq-t1-e3si1024x-t1-e3si5855dc-t1-e3sia411dj-t1-e3sum110p06-07l-e3 d2paksi1903dl-t1-e3 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    sc-75sc-75asc-89gs 069+9powerpack 1212-8si4946beysi2314edssi4430bdytsop6 marking 345tn2404k1206-8 chipfet layoutsi4630dysum110n04-04 PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


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    si6463bdqsi6459bdq-t1-ge3si5944du-t1-e3si5944du-t1-ge3+15si5945du-t1-e3si5945du-t1-ge3si5947du-t1-e3si5947du-t1-ge3ppaksc75si5480sia913dj-t1-ge3sia513dj-t1-e3si6404dq-t1sia411dj-t1-e3sib414dk-t1-e3si6913dq-t1-e3sia513dj-t1-ge3si6925adq-t1-e3si6981dq-t1-ge3 PDF