MARKING JTS Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

marking CODE JTS

Abstract: BAS28 marking JTs Q62702-A77 JTS MARKING
Contextual Info: Silicon Switching Diode Array BAS 28 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

marking CODE JTS

Abstract: Q62702-A77 marking JTs BAS28
Contextual Info: Silicon Switching Diode Array BAS 28 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

BAS28

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes BAS28/W " ! ,  ,  Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage

Contextual Info: SIEMENS BAS 28 Silicon Switching Diode Array • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * o Package1) SOT-143 NJ - È H- «1 3 2 0- N - 0

Q62702-A3466

Abstract: marking CODE JTS
Contextual Info: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings

BAS28

Abstract: VPS05178 BAS28 JTs
Contextual Info: BAS28 Silicon Switching Diode Array 3
For high-speed switching applications
Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol

Q62702-A77

Abstract: EHA07008
Contextual Info: SIEMENS Silicon Switching Diode Array BAS 28 • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * Package1) 1 SOT-143 r ^ i o- pH-° 3 i o 2 0 - ^ - O

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array • For high-speed switching applications • Electrical insulated diodes Ordering Code Pin Configuration BAS 28W JTs Q62702-A3466 1 =C1 CM O Marking II CM Type Package 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

marking CODE JTS

Abstract: BAS28
Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

BAS28W

Abstract: marking JTs
Contextual Info: BAS28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT343 Maximum Ratings Parameter

w1901

Contextual Info: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS 28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-343 Maximum Ratings

VPS05178

Abstract: BAS28 EHA07008
Contextual Info: BAS 28 Silicon Switching Diode Array 3
For high-speed switching applications
Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS 28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

marking CODE JTS

Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

SANYO sh2a027-1

Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Contextual Info: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead

lic policy

Contextual Info: REFERENCE DATA KV 1 8 3 5 K S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLICATIONS 4. STR U C T U R E 5. PA CK A GE OU TLINE 6. PIN LAYOUT 7. PA CK A GE O U TL IN E D I M E N S I O N S / SIG N A T U R E Drawn By MARKING

marking CODE JTS

Contextual Info: MA ALUMINUM ELECTROLYTIC CAPACITORS 5mmL. Standard, For General Purposes series Standard ultra-miniature series with 5mm height. MT JTs m p erature j on-polarized MA A ML / Low Leakage \CuiTent I IT ~ Smaller MJ iSpecifications Item Performance Characteristics

Contextual Info: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S Sem iconductor Corp. SUPER-MINI SCHOTTKY DIODES DESCRIPTION The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky diodes, epoxy molded in a super-mini surface mount package, designed forfastswitching applications requiring

MMBT3904DW

Contextual Info: WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

cma 10012

Abstract: cma+10012
Contextual Info: THI R D ANGLE PROJECTI ON l 「 ITEM CODE VMO丁 L目 TAGE ! F山 * lLFT 山 MENH SIONsS … d … ) 4 L _ / 1 1 1 1 D f f f I I f " ICompany name changed Apr . 1 2005 Apr . 1 2006 Apr . 1 2008 日 ec.21 .1 2010 ー ( 4O'C~+ 85'Cート 40 'C~+ 1 05 ' C