MARKING G2U Search Results
MARKING G2U Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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MARKING G2U Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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M05 SOT-23Contextual Info: ESD/TESD* Series TESD*G2U SERIES BIDIRECTIONAL TVS DIODE ARRAY FOR LATCH-UP PROTECTION APPLICATIONS ◆ RS-232, RS-422 & RS-423 Data Lines ◆ Audio/Video Inputs SOT-23 ◆ Wireless Network Systems ◆ Digit Video Interface DVI ◆ Medical Sensors ◆ Notebook Computers |
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RS-232, RS-422 RS-423 OT-23 IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 TESD03G2U TESD05G2U M05 SOT-23 | |
nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
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NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G | |
FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
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R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic | |
nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
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G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 | |
marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
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P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 | |
marking g2u
Abstract: SW sot-363
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UPG2009TB UPG2009TB UPG2009TB-E3 marking g2u SW sot-363 | |
Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz |
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UPG2009TB UPG2009TB | |
Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz |
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UPG2009TB UPG2009TB | |
marking E2W
Abstract: AP2122 G2W marking AP2122AK marking E2Y
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AZ70XX AP2122 AP2122 AZ70XX OT-89-3 marking E2W G2W marking AP2122AK marking E2Y | |
PG2009TBContextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L- BAND High Power SPDT Switch DESCRIPTION μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500MHz to 2.5GHz, having |
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PG2009TB PG2009TB 500MHz 34dBm | |
Contextual Info: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or |
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UPG2009TB BluetoothT60 IR260 VP215 WS260 HS350 | |
PG2009TB
Abstract: spdt mark s22
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PG2009TB PG2009TB PG10191EJ02V0DS spdt mark s22 | |
marking g2u
Abstract: SW SPDT 6pin VP215 HS350 UPG2009TB UPG2009TB-E3 California Eastern Laboratories gaas fet 4w
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UPG2009TB UPG2009TB HS350 marking g2u SW SPDT 6pin VP215 HS350 UPG2009TB-E3 California Eastern Laboratories gaas fet 4w | |
Contextual Info: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or |
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UPG2009TB IR260 VP215 WS260 HS350 | |
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SW SPDT 6pin
Abstract: HS350 VP215 PG10191EJ02V0DS
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PG2009TB PG2009TB SW SPDT 6pin HS350 VP215 PG10191EJ02V0DS | |
marking g2uContextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low |
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PG2009TB PG2009TB marking g2u | |
uPG2009TB
Abstract: marking g2u SW SPDT 6pin HS350 VP215
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PG2009TB PG2009TB uPG2009TB marking g2u SW SPDT 6pin HS350 VP215 | |
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion |
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PG2009TB PG2009TB | |
uPG2009TB-E3
Abstract: SW SPDT 6pin HS350 VP215
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Contextual Info: Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit |
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AP2122 AP2122 | |
marking E2W
Abstract: G2U TR
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AP2122 OT-23-5 AP2122 marking E2W G2U TR | |
marking E2W
Abstract: high voltage diodes AP2122
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AP2122 AP2122 marking E2W high voltage diodes | |
29f040b
Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
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DMD2006F 29f040b teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6 | |
rtd 2668
Abstract: power amplifier 3000W with PCB ZENER h48 IR32Z relay 3500 2231 021 MTL5018 gi 9644 h48 zener MTL5521 FREQUENCY TO CURRENT CONVERTER MTL5544
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element-14 DM3600U/S1 DM3600U/S2 24x48 22x45 rtd 2668 power amplifier 3000W with PCB ZENER h48 IR32Z relay 3500 2231 021 MTL5018 gi 9644 h48 zener MTL5521 FREQUENCY TO CURRENT CONVERTER MTL5544 |