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    MARKING G2U Search Results

    MARKING G2U Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910/BQA
    Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy
    9936/BCA
    Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) PDF Buy
    54AC86/SDA-R
    Rochester Electronics LLC 54AC86/SDA-R - Dual marked (M38510R75202SDA) PDF Buy

    MARKING G2U Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M05 SOT-23

    Contextual Info: ESD/TESD* Series TESD*G2U SERIES BIDIRECTIONAL TVS DIODE ARRAY FOR LATCH-UP PROTECTION APPLICATIONS ◆ RS-232, RS-422 & RS-423 Data Lines ◆ Audio/Video Inputs SOT-23 ◆ Wireless Network Systems ◆ Digit Video Interface DVI ◆ Medical Sensors ◆ Notebook Computers


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    rs-232rs-422rs-423ot-23+6iec61000-4-2iec61000-4-4iec61000-4-5tesd03g2utesd05g2um05 sot-23 PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


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    ne68018ne680upa801tcupa808tc+16upa821tcupa826tcupa861tdupa831tcupa862tdupa835tcnec b1007t79 code markingc3206marking s16marking code c1hqfn marking t88c3h markingne02107t79 markingc3206g PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77 PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


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    p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817 PDF

    marking g2u

    Abstract: SW sot-363
    Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz


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    upg2009tbupg2009tb-e3marking g2usw sot-363 PDF

    Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz


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    upg2009tb PDF

    Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz


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    upg2009tb PDF

    marking E2W

    Abstract: AP2122 G2W marking AP2122AK marking E2Y
    Contextual Info: Product Brief VOLTAGE HIGH SPEED, DETECTOR EXTREMELY LOW NOISE LDO REGULATOR Description AZ70XX AP2122 Parametric Table The positive voltage regulator ICs with fabThe AP2122 AZ70XXseries seriesare ICs are under voltage detectors ricated by CMOS process. Each


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    az70xxap2122ot-89-3marking e2w+3g2w markingap2122akmarking e2y PDF

    PG2009TB

    Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L- BAND High Power SPDT Switch DESCRIPTION μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500MHz to 2.5GHz, having


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    pg2009tb500mhz34dbm PDF

    Contextual Info: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


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    upg2009tbbluetootht60ir260vp215+2ws260hs350 PDF

    PG2009TB

    Abstract: spdt mark s22
    Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion


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    pg2009tbpg10191ej02v0dsspdt mark s22 PDF

    marking g2u

    Abstract: SW SPDT 6pin VP215 HS350 UPG2009TB UPG2009TB-E3 California Eastern Laboratories gaas fet 4w
    Contextual Info: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


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    upg2009tbhs350marking g2usw spdt 6pin+3vp215upg2009tb-e3california eastern laboratories gaas fet 4w PDF

    Contextual Info: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or


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    upg2009tbir260vp215ws260+1hs350 PDF

    SW SPDT 6pin

    Abstract: HS350 VP215 PG10191EJ02V0DS
    Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion


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    pg2009tbsw spdt 6pinhs350vp215+1pg10191ej02v0ds PDF

    marking g2u

    Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low


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    pg2009tbmarking g2u PDF

    uPG2009TB

    Abstract: marking g2u SW SPDT 6pin HS350 VP215
    Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low


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    pg2009tbupg2009tbmarking g2usw spdt 6pin+2hs350vp215 PDF

    Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion


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    pg2009tb PDF

    uPG2009TB-E3

    Abstract: SW SPDT 6pin HS350 VP215
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    upg2009tb-e3sw spdt 6pinhs350vp215 PDF

    Contextual Info: Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit


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    ap2122 PDF

    marking E2W

    Abstract: G2U TR
    Contextual Info: Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit


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    ap2122ot-23-5marking e2wg2u tr PDF

    marking E2W

    Abstract: high voltage diodes AP2122
    Contextual Info: Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit


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    ap2122marking e2whigh voltage diodes PDF

    29f040b

    Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
    Contextual Info: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3


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    dmd2006f29f040bteradyne catalyststacked 4mb flash and 1mb sram+7wed3c755e8mcflf14kyocera 128 cqfpceramic quad flatpack cqfp95613hac 132bag package top mark tms320c6 PDF

    rtd 2668

    Abstract: power amplifier 3000W with PCB ZENER h48 IR32Z relay 3500 2231 021 MTL5018 gi 9644 h48 zener MTL5521 FREQUENCY TO CURRENT CONVERTER MTL5544
    Contextual Info: 2659 Technical portal and online community for Design Engineers - www.element-14.com Process Control, Timers & Counters Page Process Control Analogue Signal Conditioners . . . . . . . . . . . . Current and Voltage Controls . . . . . . . . . . . . . DIN / Energy - Meters. . . . . . . . . . . . . . . . . . . . .


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    element-14dm3600u/s1dm3600u/s224x48+1122x45rtd 2668power amplifier 3000w with pcbzener h48ir32zrelay 3500 2231 021mtl5018gi 9644h48 zenermtl5521 frequency to current convertermtl5544 PDF