MARKING G21 Search Results
MARKING G21 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKING G21 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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g21 TransistorContextual Info: D T D 1 1 3 Z K Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • available in an SMT3 (SMT, SC-59) package • package marking: DTD113ZK; G21 • a built-in bias resistor allows inverter circuit configuration without external |
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sc-59dtd113zkta-251c50ftn+1 | |
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Contextual Info: Surface Mount Zener Diodes 350mW Zener Voltage @ IZT Marking Code Part No. MMBZ4695 MMBZ4696 MMBZ4697 MMBZ4698 MMBZ4699 MMBZ4700 MMBZ4701 MMBZ4702 MMBZ4703 MMBZ4704 MMBZ4705 MMBZ4706 MMBZ4707 MMBZ4708 MMBZ4709 MMBZ4710 MMBZ4711 MMBZ4712 MMBZ4713 MMBZ4714 MMBZ4715 |
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350mwmmbz4617mmbz4618mmbz4619+4 | |
MA6 diode
Abstract: diode G21 LMBD2838LT1 DIODE a5 g21 Transistor lt1 switch LMBD2837LT1 LMBD2837LT1G LMBD2838LT1G a5 marking
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lmbd2837lt1lmbd2838lt13000/tapelmbd2837lt1g+7 | |
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Contextual Info: ISL6260, ISL6260B Data Sheet January 3, 2006 Multiphase Core Regulator for IMVP-6 Mobile CPUs Features Ordering Information TEMP. RANGE °C PART MARKING • Multiple Current Sensing Approaches Supported - Lossless DCR Current Sensing - Precision Resistive Current Sensing |
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isl6260isl6260bfn9162 | |
isl6260
Abstract: isl6260crz ISL6260CRZ-T SL6260 ISL6260BCRZ ISL6260B ISL6260BCRZ-T ISL6208 geyserville REGULATOR IC 7832
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isl6260isl6260bisl6260crzisl6260bcrz+7 | |
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Contextual Info: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period |
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128ms24/26-pin | |
g23 sot23
Abstract: sot23 G17 MMBZ4625
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350mwmmbz46mmbz4617mmbz4618+9 | |
tc 144e
Abstract: 144EK
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2sc40822sc48182sc40632sc4617+8 | |
3P15
Abstract: G2113
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g2113300ma3p15 | |
3p25
Abstract: 3P15 G2123 3P34
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g2123300ma3p253p15+1 | |
G2132Contextual Info: G2132 Global Mixed-mode Technology Photoflash Capacitor Charger for DSC Feature Description VCC 2.9V to 5.5V Supply Voltage Operating Range. Suitable voltage range for Battery 1.6V to 9V. Adjustable Output Voltage. Adjustable Peak Current. Charge Complete Indicator. |
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g213210-leadg2132k21utdfn2x2-10 | |
TQFN5X5-40Contextual Info: G2102 Global Mixed-mode Technology Inc. 7-Channel DC-DC Converter for DSC 1MHz Features General Description The G2102 provide a complete power supply solution for digital cameras. They improve performance, component count, and size compared to other |
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g2102ctl234tqfn5x5-40 | |
G2129
Abstract: SOT23-6 MARKING b4
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g2129sc-70-6ot-363ot-23-6+2 | |
G2120Contextual Info: G2120 Global Mixed-mode Technology 3 Channels, High Efficiency, Synchronous Step Down with LDO Features Continuous Loading: 3A Buck 1 , 1A (Buck 2 and 3) 1MHz Switching Frequency The converters can operate in 5V systems and have |
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g2120co331 | |
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siemens MOSFET 14
Abstract: Marking G1s
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bf1009seha072151009sq62702-f1628+4 | |
a31sContextual Info: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network AGC O - i X - HF o Input D rain G21 HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
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eha07215q62702-f1487ot-143200mhz+1 | |
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Contextual Info: BF 1009 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network X AGC o- X Drain G21 HF o- 1 - G1 Input 11 GND HF Output + DC EHA07215 |
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eha07215q62702-f1613ot-143200mhz | |
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Contextual Info: SIEMENS flE3SbOS OOTODSa TTl BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network i D rain G21 AGC ° - HF °-II— In p u t HF O utp ut |
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q62702-f1498ot-143800mhzbf1005 | |
g86 630 a2
Abstract: T85 "Rocker Switches" PCB mount d5024 7101J1ZQE2 RS-186E U211 U213 SPST Round Red Illuminated Actuator Rocker Switch J51-J61 7301J1
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g86 630 a2t85 "rocker switches" pcb mountd50247101j1zqe2+6 | |
GA85
Abstract: marking GA86
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sw-13a65n-a01125vacga85marking ga86 | |
KIC73B24
Abstract: KIC73E27T2
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kic73a/b/c/d/e1650t/t2kic73a/b/c/d/ekic73+4 | |
6-32-UNC-2B
Abstract: self lock BUTTON SWITCH 6 pin 6-32UNC-2B marking 222 6-32UNC-2A GJ1B M12x1 locking nut
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m12x1x67/16-32unx66-32-unc-2bself lock button switch 6 pin+5 | |
MDC 2301
Abstract: VPU 2204 cdr 1746 monitor circuit diagram INFINEON PART MARKING 252 MDIO clause 45 10GBASE-LR V23833-G2104-A001 V23833-G6104-A001 V23833-G6104-A011 V23833-G9909-Z001
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v23833-g2104-a001v23833-g6104-a001v23833-g6104-a0113aetm-2002+10 | |
jd 1803
Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
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2sa17742sa18212sa18852sc4617+16 | |