MARKING G1M Search Results

Contextual Info: 2SB1184F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: B1184^Q, where ★ is hFE code and □ is lot number Dimensions (Units: mm) • low collector saturation voltage, typically VCE(Sat) = ~°-5 v f° r 6.5 ±0.2 Ò

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

marking G1m

Contextual Info: L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double

MARKING G1M

Contextual Info: PRELIMINARY DATA SHEET L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz

Contextual Info: L, S Band SPDT GaAs MMIC Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at f = 1 GHz LINS2 = 0.4 dB TYP at f = 2 GHz LINS3 = 0.5 dB TYP at f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital

Contextual Info: L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double

Contextual Info: PRELIMINARY DATA SHEET L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz

Contextual Info: L, S Band SPDT GaAs MMIC Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at f = 1 GHz LINS2 = 0.4 dB TYP at f = 2 GHz LINS3 = 0.5 dB TYP at f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital

Contextual Info: PRELIMINARY DATA SHEET NEC L,S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: T he U P G 15 8T B is an L-band S P D T S ingle Pole Double Throw G aA s FET sw itch w h ich w a s d e velope d fo r digital cellular, c ord le ss tele ph on e and o th e r L,S -band w ire le ss a p p li­

UPG158TB

Abstract: UPG158TB-E3 VP215 HS350
Contextual Info: NEC's ½W UPG158TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and

C10535E

Abstract: VP15-00-3 UPG158TB
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG158TB L, S- BAND SPDT SWITCH DESCRIPTION The µPG158TB is a L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5

VP215

Abstract: HS350
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG158TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG158TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

SW SPDT 6pin

Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PIC16F753/HV753 14/16-Pin, Flash-Based 8-Bit CMOS Microcontrollers High-Performance RISC CPU: Peripheral Features: • Only 35 Instructions to Learn: - All single-cycle instructions except branches • Operating Speed: - DC – 20 MHz clock input - DC – 200 ns instruction cycle

LC256

Abstract: 8941a
Contextual Info: ADVANCE 256K x 18. 128K x 32/36 2.5V I/O. PIPELINED, DCD SYNCBURST SRAM |U |IC =R O N MT58 LC256 K18 F 1 , MT58 LC128 K32 F 1, MT58 LC128 K36 F 1 SYNCBURST SRAM 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES

OPA660

Abstract: OPA860 OPA860ID OPA860IDR ota amplifier BJT with V-I characteristics
Contextual Info: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high

ota amplifier

Abstract: AGC OPA660 OPA660 OPA860 OPA860ID OPA860IDR SBOS331
Contextual Info: BurrĆBrown Products from Texas Instruments OPA860 SBOS331 – JUNE 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high

ccii

Abstract: PACKAGE MARKING RADJ SOT23 R2S sot23 transistor marking R2s OPA861 OPA861ID OPA861IDBVR OPA861IDBVT OPA861IDR transconductance amplifier spice
Contextual Info: BurrĆBrown Products from Texas Instruments OPA861 SBOS338 – AUGUST 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high

Contextual Info: BurrĆBrown Products from Texas Instruments OPA860 SBOS331A – JUNE 2005 – REVISED JANUARY 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component

Contextual Info: BurrĆBrown Products from Texas Instruments OPA861 SBOS338 – AUGUST 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high

CCII APPLICATION

Abstract: marking R3s SBOU035
Contextual Info: BurrĆBrown Products from Texas Instruments OPA861 SBOS338D – AUGUST 2005 – REVISED AUGUST 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high