MARKING G1K Search Results

Contextual Info: Transistors NPN General Purpose Transistor I BC848BW/BC848B/BC848C fF M tu ra t •E x te rn a l dimensions Units : mm 1 ) BV ceo< 3 0V (Ic — 1mA) 2 ) C om plem ents the BC 858B /B C858BW . BC848BW •P a c k a g e , marking and packaging specifications

MMST8098

Abstract: MMST5088 marking RAV marking GAA
Contextual Info: Transistors/"Surface Mounting Type • SST3 Package/NPN Type Application Pre Amp Low Noise Amp Part No. BVceo V lc (mA) @|c & VCE f r (MHz) Cob (pF; Marking BC817-25 45 800 160 400 100 m A /1 V 150 6 G6B D15 BSR14 40 800 100 300 1 50m A /10V 300 8 GU8 D15

SC-75A

Abstract: 2SA1577 2SC4102
Contextual Info: S C - 7 5 A A N D S C - 7 0 M I N I AT U R E B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • • • • • • • • • New Product Marking IC VCEO Type Function mA max V SC-75A 2SC4617 preamplifier B❐ 150 50 2SC4618 FM, IF/AM, RF osc. conv. A❐ 50

Contextual Info: Transistors I NPN General Purpose Transistor B C 848B W /B C 848B /B C 848C • F e a tu re s • E x te rn a l dim ensions <Units : mm 1 ) B V ceo< 3 0V 0c= 1m A) BC848BW 2 J C o m p le m e n ts the B C 8 5 8 6 /B C 8 5 8 B W . • P a c k a g e , marking and packaging specifications

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

2N4401 EBC

Abstract: marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K
Contextual Info: Transistors USA / European specification models types [Surface mounting type] • U M T 3 /N P N type General purpose small signal amplifiers Product name BC84Ô8W BVcbo BVceo BViao Min. Min. Min. V (V) (V) 5 30 30 • U M T 3 / PNP ic Max. CmA) iCBO Max.

Contextual Info: >j 4 ; i^ /'ç ^ i .j- ^ if c i 'ît H i - :• rVO ' r :r-*ï; ‘fV y J='•£*•':. -■ •t ¥ ÿ -’.•r ^ i^ :y > f ^ ¿ ÿ ÿ -y -^ :, -> *r Wf Tra n sistors USA/European Specification Models • UMT3 Package/NPN Type For General Purpose Small Signal Amplifiers

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

marking G3k sot-23

Abstract: marking G1k sot-23 A32 SOT23 GAJ SOT23 GH1 sot-23
Contextual Info: U.S. European Type Series SST European PRO ELECTRON Type SOT-23 • P ackage style and dimensions SST P ackage Recommendable copper plate area dimension on printed circuit board (U. S. /European SOT-23) 2. 9 ± 0. 2 * . -'-i 0 •95- S 2 r — *i

sot-23 marking code C33

Abstract: A32 SOT23 code a32 sot SOT "GBA" GH1 sot-23 marking code GEC bc858c g3l MARKING G1.G BC817-25 BC847C
Contextual Info: U.S. European Type Series SST European PRO ELECTRON Type SOT-23 •P ackage style and dimensions SST Package (U. S. /European SOT-23) Dimensions 0- 15 - o ^ o s j ^ ( I ) Emitter (2 ) Base (3 ) Collector Actual size Enlarged (X 3 .0 ) NPN Transistors Electrical characteristics of part No. type can be looked up from the data of DIE No.

g1k bc848b

Abstract: g1l transistor
Contextual Info: NPN small signal transistor Die no. C-22 Dimensions Units: mm These are epitaxial planar NPN silicon transistors. SST3 Features • • • 1. 9 ± 0 . 2 available in a SST3 (SST, SOT-23) package, see page 300 0 .4 S 1 0 .I 0 .9 $ 0.5 S a collector-to-emitter breakdown

transistor 131 8D

Abstract: g1k bc848b BC848C BC848B BC848BW BC858B BC858BW T106 T116 MARKING 5D NPN
Contextual Info: BC848BW / BC848B / BC848C Transistors NPN General Purpose Transistor BC848BW / BC848B / BC848C !External dimensions Units : mm !Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2

Contextual Info: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B External dimensions Unit : mm Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4

FET MARKING CX

Abstract: VP15-00-3
Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG154TB L-BAND SPDT SWITCH DESCRIPTION The µPG154TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low

BC848B

Abstract: transistor 131 8D BC848BW BC848C BC858B BC858BW T106 T116 MARKING 5D NPN
Contextual Info: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B zExternal dimensions Unit : mm zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4

BC848C

Abstract: transistor 131 8D
Contextual Info: BC848BW / BC848B / BC848C Transistors NPN General Purpose Transistor BC848BW / BC848B / BC848C !External dimensions Units : mm !Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2

Contextual Info: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B zExternal dimensions Unit : mm zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4

marking G1K

Contextual Info: PRELIMINARY DATA SHEET_ ¿iPG154TB GaAs INTEGRATED CIRCUIT L-BAND SPDT SWITCH DESCRIPTION The /iPG 154TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.

rkm 33 transistor

Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

Contextual Info: PRELIMINARY PRM P045F048T17AL V•I Chip – PRM-AL Pre-Regulator Module TM • 45 V input V•I Chip PRM • Adaptive Loop feedback • Vin range 38 – 55 Vdc • ZVS buck-boost regulator • High density – 586 • 1.42 MHz switching frequency W/in3

Contextual Info: PRELIMINARY PRM P024F048T12AL V•I Chip – PRM-AL Pre-Regulator Module TM • 24 V input V•I Chip PRM • Adaptive Loop feedback • Vin range 18 – 36 Vdc • ZVS buck-boost regulator • High density – 414 • 1.33 MHz switching frequency W/in3