MARKING G1 02 Search Results

marking g1

Abstract: G1 marking sot23 mark G1 SOT-23 sot-23 Marking G1 G1 SOT-23 BFS20 marking G1 02 MARKING G1 SOT23 marking G1 sot-23
Contextual Info: SEMICONDUCTOR BFS20 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G1 No. 1 Item Marking Device Mark G1 BFS20 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating

Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel

TRANSISTOR SMD MARKING g1

Abstract: CMBT5551 smd transistor g1
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

TRANSISTOR SMD MARKING g1

Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1

S3V 05

Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3

marking code YS SMD

Contextual Info: Bulletin PD-20836 rev. C 02/07 16CTQ.GS 16CTQ.G-1 SCHOTTKY RECTIFIER 16 Amp IF AV = 16 Amp VR = 60/100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 16 A 60/ 100 V IFSM @ tp = 5 s sine 650 A

Contextual Info: Bulletin PD-20835 rev. A 02/07 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary

40HF

Abstract: 43CTQ 43CTQ080G-1 43CTQ080GS 43CTQ100G-1 43CTQ100GS P460 SMD-220
Contextual Info: Bulletin PD-20834 rev. A 02/07 43CTQ.GS 43CTQ.G-1 SCHOTTKY RECTIFIER 40 Amp IF AV = 40 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular waveform 40 A 80 - 100 V 850 A 0.67 V VRRM

Contextual Info: DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Dual N-Channel MOSFET • • Low On-Resistance • • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020

"MARKING CODE M3"

Abstract: BF909 BF909R K 3053 TRANSISTOR
Contextual Info: BF909; BF909R N-channel dual gate MOS-FETs Rev. 02 — 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: BF909; BF909R N-channel dual gate MOS-FETs Rev. 02 — 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

dual-gate

Abstract: BF1100 BF1100R marking code my
Contextual Info: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

E4 marking

Contextual Info: DMC2004LPK Green COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS th < 1V • • Low Input Capacitance • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020C

Contextual Info: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Low Capacitance MOS FET 13005

Abstract: BF1205C
Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

Contextual Info: SBR140LP Green 1.0A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • Ultra Low Forward Voltage Drop • • Excellent High Temperature Stability • • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • Moisture Sensitivity: Level 1 per J-STD-020D

s1d13743

Abstract: VD16 S1D13743F00A2 REG-52H S1D13743F00A pd6122 c9142
Contextual Info: S1D13743 Mobile Graphics Engine Hardware Functional Specification Document Number: X70A-A-001-02 Status: Revision 2.7 Issue Date: 2010/05/18 SEIKO EPSON CORPORATION 2004 - 2010. All Rights Reserved. You may download and use this document, but only for your own use in evaluating Seiko Epson/EPSON products.

QFN-20

Abstract: MRFIC1870 20/MRFIC1870
Contextual Info: Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking Package MRFIC1870 1870 QFN-20 The MRFIC1870 is a single supply, RF power amplifier designed for the 2.0 W DCS/PCS

1n4749a

Abstract: "Voltage Regulator Diodes" 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A
Contextual Info: 1N4728A to 1N4749A Voltage regulator diodes Rev. 02 — 30 October 2009 Product data sheet 1. Product profile 1.1 General description Low voltage regulator diodes in hermetically sealed small SOD66 DO-41 glass packages. The series consists of 22 types with nominal working voltages from 3.3 to 24 V.

Contextual Info: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking