MARKING E11 DIODE Search Results

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

H 48 zener diode

Abstract: zener diode 12v 0.5 w 5,6v 1,3w zener diode marking E11 DIODE ZENER DIODE marking l2 BZX85C3V3-BZX85C56 zener diode BZX85C15 DO41 package BZX85C5V1 BZX85C7V5 zener 1.3W
Contextual Info: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features —Wide zener voltage range selection:3.3V to 56V C A —Vz Tolerance Selection of ±5% —Designed for through-Hole Device Type Mounting

S3995

Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Contextual Info: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution

marking E11 DIODE

Contextual Info: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features C ­Wide zener voltage range selection:3.3V to 56V A ­Vz Tolerance Selection of ±5% ­Designed for through-Hole Device Type Mounting

E13 diode

Abstract: SPA548-01
Contextual Info: SPA548-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •

Contextual Info: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES: • •

marking E13 diode

Abstract: marking E10 DIODE SPA548-01 E5 marking
Contextual Info: SPA548-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •

marking E10 DIODE

Abstract: DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8
Contextual Info: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HYPERFAST HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES:

Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

marking E11 DIODE

Abstract: E11 diode
Contextual Info: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

HSMP-389D

Abstract: avago month marking avago marking -20
Contextual Info: HSMP-389D PIN Diode Diversity Switch Data Sheet Description Features The HSMP-389D is a low cost and low loss diversity switch designed to operate from 50MHz to 6GHz. HSMP-389D is built with unique 4 PIN diode configuration, and it is housed in a industrial standard low cost miniature

D2502

Abstract: ECSP1006-2 ESGD100
Contextual Info: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view

Contextual Info: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: Doc No. TT4-EA-11567 Revision. 4 Product Standards Zener Diode DZ2J3900L DZ2J3900L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11540 Revision. 3 Product Standards Zener Diode DZ2J0330L DZ2J0330L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11562 Revision. 4 Product Standards Zener Diode DZ2J2400L DZ2J2400L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11557 Revision. 3 Product Standards Zener Diode DZ2J1500L DZ2J1500L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11792 Revision. 3 Product Standards Zener Diode DZ2S0750L DZ2S0750L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J075 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-13615 Revision. 4 Product Standards Zener Diode DZ2S1000L DZ2S1000L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J100 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

CAS100H12

Contextual Info: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package

CPWR-AN12

Abstract: CAS100H12AM1
Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz