MARKING DIODE 2U Search Results

marking 2U diode

Abstract: D1NL20U 1NL20U DIODE MARKING 2U L20U
Contextual Info: n - n x ^ -c r— K Super Fast Recovery Diode Axial Diode O U TLIN E D IM E N SIO N S D1NL20U Unit • mm Package I AX057 o 200V 1A hLO rn ±0.1 2 0 MIN •trr3 5 n s -2 0 m in -M - • 5 m m \d " j m «EPM f Marking

Contextual Info: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l

marking 2U diode

Abstract: marking 2U 20 diode diode marking code 2U diode marking 2U marking code DIODE 2U diode 2u marking code marking 2U 40 diode 2U marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode W tm D1NL20U OUTLINE Package : AX057 U nit-m m W eight 0.19g Typ 200V 1A Feature UJ 02.6 • Low Noise • m s 'ix • trr= 3 5 n s • trr=35ns 0> -M - Main Use • Fly Wheel • ÍM .0 A J M 3 • Home A ppliance, Office Autom ation, Lighting

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20L50 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20L50 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed etc.

FSL3206

Contextual Info: IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic

lv2.8

Abstract: SPLV2.8 30 pin lightning U28 MARKING 71 SOT23-3 u2.8 diode u2 40 ethernet TVS 2.8 diode diode marking 355 SOT23
Contextual Info: SPA Silicon Protection Array Products Low Voltage, Diode Compensated TVS Diode for ESD and Lightning Protection HF RoHS Pb GREEN SPLV2.8 Lead-Free/Green Series Description The SPLV2.8 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20L45C DIODE DUAL MOS GATED BARRIER RECTIFIERS  DESCRIPTION The UTC MGBR20L45C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with high current capability, low forward voltage and high switching speed, etc.

IRLML5103PBF

Abstract: IRLML2246 irlml2030
Contextual Info: IRLML5103PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = -30V 3 D

Contextual Info: IRLML2402PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = 20V 3 D

IRFH7911

Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
Contextual Info: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20V50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20V50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

Contextual Info: PD - 97427 IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits

lv2.8

Abstract: MO-203 SPLV2.8 U28 MARKING TP 41 WITH PIN CONFIGURATION DIAGRAM
Contextual Info: TVS Diode Arrays SPA Family of Products Lightning Surge Protection - SPLV2.8 Series SPLV2.8 Series 2.8V 50A TVS Array RoHS Pb GREEN The SPLV2.8 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in parallel with the low

MGBR2U40

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR2U40 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION + The UTC MGBR2U40 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR10L60C DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L60C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

IRFB3306PBF

Abstract: IRFB3306 AN-994
Contextual Info: PD - 97098A IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 210 mosfet

Abstract: IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040
Contextual Info: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

MOSFET IRF 630 Datasheet

Abstract: transistor IRF 630 IRF3805 IRF3805L IRF3805S
Contextual Info: PD - 95880C IRF3805 IRF3805S IRF3805L AUTOMOTIVE MOSFET Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 3.3mΩ

IRF3805LPBF

Abstract: IRF3805 IRF3805PBF
Contextual Info: PD - 97046B IRF3805PbF IRF3805SPbF IRF3805LPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 3.3mΩ

schematic diagram lightning protection

Abstract: etc-1-13 VDSL2 ETC1-13
Contextual Info: TVS Diode Arrays SPA Family of Products Lightning Surge Protection - SP03-3.3 Series SP03-3.3 Series 3.3V 150A Rail Clamp Array RoHS Pb GREEN This new broadband protection device from Littelfuse provides overvoltage protection for applications such as 10/100/1000 BaseT Ethernet, T3/E3 DS3 interfaces,

IRLML5103GPBF

Contextual Info: PD - 96165A IRLML5103GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -30V 3 D S

IRLML6346

Abstract: IRLML6244 irlml2246 IRLML6246 IRLML0060 IRLML2244 irlml0030 IRLML2060 IRFML9244 IRLML9301
Contextual Info: PD - 96309A IRLML0040TRPbF VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ HEXFET Power MOSFET V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits

SRDA3.3-4.TBT

Abstract: srda3,3-4 phil
Contextual Info: SRDA3.3-4 RailClamp Low Capacitance TVS Array PROTECTION PRODUCTS - RailClamp® Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SRDA series has been specifically designed to protect sensitive

JESD47F

Abstract: IRLR8256PBF IRLU8256 IRLU8256PBF TP125 IRLR8256
Contextual Info: PD - 96208A Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use IRLR8256PbF IRLU8256PbF HEXFET Power MOSFET VDSS RDS on max