MARKING DIODE 2U Search Results

marking 2U diode

Abstract: D1NL20U 1NL20U DIODE MARKING 2U L20U
Contextual Info: n - n x ^ -c r— K Super Fast Recovery Diode Axial Diode O U TLIN E D IM E N SIO N S D1NL20U Unit • mm Package I AX057 o 200V 1A hLO rn ±0.1 2 0 MIN •trr3 5 n s -2 0 m in -M - • 5 m m \d " j m «EPM f Marking

KSH200

Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Contextual Info: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP

Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDU3V3UP RoHS Device Features 0603/SOD-523F - Working voltage: 3.3V 0.071 1.80 0.063(1.60) - Low leakage current. - Low operating and clamping voltages. 0.039(1.00) 0.031(0.80) Mechanical data - Case: 0603/SOD-523F standard package,

Contextual Info: Transient Voltage Suppression Diodes Surface Mount > 3.0SMC series 3.0SMC Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The 3.0SMC series is designed specifically to protect sensitive electronic equipment from voltage transients

Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS

Contextual Info: PD - 95848C IRLR2905Z IRLU2905Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 13.5mΩ

Contextual Info: SMD ESD Protection Diode CPDH3V3UP-HF RoHS Device Halogen Free SOD-523 Features 0.008 0.20 REF 0.051(1.30) 0.043(1.10) -IEC61000-4-2 Level 4 ESD protection. -Working voltage: 3.3V -Low leakage current. -Low operating and clamping voltages. 0.014(0.35) 0.010(0.25)

Contextual Info: SMD ESD Protection Diode CPDV5-3V3UP RoHS Device Features -IEC61000-4-2 Level 4 ESD protection. SOT-353 -Working voltage: 3.3V 0.087 2.20 0.079(2.00) -Low leakage current. -Low operating and clamping voltages. 0.053(1.35) 0.045(1.15) Mechanical data -Case: SOT-353 standard package ,molded plastic.

Contextual Info: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l

Contextual Info: SMD ESD Protection Diode CPDH3V3UP RoHS Device Features -IEC61000-4-2 ESD ±15kV(Contact), ±20kV(Air). SOD-523 -Working voltage: 3.3V -Low leakage current. 0.008(0.20) 0.051(1.30) 0.043(1.10) REF -Low operating and clamping voltages. 0.033(0.85) 0.030(0.75)

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SRDA3.3 Series SRDA3.3 Series 8pF 35A Diode Array RoHS Pb GREEN The SRDA3.3 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect I/O pins against ESD and lightning induced surge events. This device can

marking 2U diode

Abstract: marking 2U 20 diode diode marking code 2U diode marking 2U marking code DIODE 2U diode 2u marking code marking 2U 40 diode 2U marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode W tm D1NL20U OUTLINE Package : AX057 U nit-m m W eight 0.19g Typ 200V 1A Feature UJ 02.6 • Low Noise • m s 'ix • trr= 3 5 n s • trr=35ns 0> -M - Main Use • Fly Wheel • ÍM .0 A J M 3 • Home A ppliance, Office Autom ation, Lighting

Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20L50 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20L50 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed etc.

Contextual Info: SMD ESD Protection Diode CPDVR083V3U RoHS Device Features -IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). -Working voltage: 3.3V SOT-383F(VR8) 0.086(2.20) 0.079(2.00) -Low leakage current. -Low operating and clamping voltages. Mechanical data 0.067(1.70)

FSL3206

Contextual Info: IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic

lv2.8

Abstract: SPLV2.8 30 pin lightning U28 MARKING 71 SOT23-3 u2.8 diode u2 40 ethernet TVS 2.8 diode diode marking 355 SOT23
Contextual Info: SPA Silicon Protection Array Products Low Voltage, Diode Compensated TVS Diode for ESD and Lightning Protection HF RoHS Pb GREEN SPLV2.8 Lead-Free/Green Series Description The SPLV2.8 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients.

irfb3306

Abstract: FS3306
Contextual Info: IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20L45C DIODE DUAL MOS GATED BARRIER RECTIFIERS  DESCRIPTION The UTC MGBR20L45C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with high current capability, low forward voltage and high switching speed, etc.

Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data

Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP RoHS Device Features SOD-523 IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0.051(1.30) 0.043(1.10) Working voltage: 3.3V Low leakage current. 0.033(0.85) 0.030(0.75) 0.014(0.35) 0.010(0.25) Low operating and clamping voltages.

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SP4021 Series SP4021 Series 2.5pF, 25A Discrete TVS Diode RoHS Pb GREEN The SP4021 devices integrate low capacitance steering diodes with one or two zener diodes for unidirectional or bidirectional protection, respectively, to protect against

SPLV2.8

Abstract: lv2.8 SPLV2.8-4
Contextual Info: SPA Silicon Protection Array Products Low Voltage, Diode Compensated TVS Array for ESD and Lightning Protection HF RoHS Pb GREEN SPLV2.8-4 Lead-Free/Green Series Description The SPLV2.8-4 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients.

SP4020

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SP4020 Series SP4020 Series 2.5pF, 30A Discrete TVS Diode RoHS Pb GREEN The SP4020 devices integrate low capacitance steering diodes with one or two zener diodes for unidirectional or bidirectional protection, respectively, to protect against