MARKING D9D Search Results

Contextual Info: PRELIMINARY l^ iiczn o N 16K LATCHED SRAM X MT56C16K16B2 16 LATCHED SRAM 16K X 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES, BYTE ENABLES • • • • • • • OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages

Contextual Info: p iC R ü N 16K LATCHED SRAM X MT5C2818 18 LATCHED SRAM 16K X 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 Packages 52-pin PLCC 52-pin PQFP PIN ASSIGNMENT Top View

11991

Contextual Info: ADVANCE p ilC R O N MT5C2818 LATCHED SRAM 16K x 18 SRAM WITH ADDRESS/ ADDRESS/ WITH DATA INPUT LATCHES FEATURES • • • • 52-Pin PLCC D-3 52-Pin PQFP (D-5) OPTIONS MARKING • Timing 15ns access 17ns access 20ns access 25ns access -15 -17 -20 -25 DQ6

Contextual Info: M IC R O N 16K LATCHED SRAM X MT5C2516 16 LATCHED SRAM 16K x 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • PIN ASSIGNMENT (Top View 52-Pin PLCC (SC-2) 52-Pin PQFP (SC-5) 2 - in illl? OPTIONS MARKING • Timing 12ns access 15ns access

Contextual Info: • h ÉidMiuiilBHááttaSflÉ BflE D MICRON TECHNOLOGY INC b llIS H T G G O E Tll =i ■ MRN ADVANCE ÉtaB*6â*ù^ÂeeÂfcâi - uMMüff T4C-2Z-/< 16K X 16 SRAM SYNCHRONOUS SRAM W ITH CLOCKED, REGISTERED INPUTS FEATURES • • • • OPTIONS MARKING « Timing

i1991

Abstract: 11991
Contextual Info: ADVANCE l^ iic n o N MT5C2516 LATCHED SRAM 16K x 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • OPTIONS MARKING • Timing 15ns access 17ns access 20ns access 25ns access -15 -17 -20 -25 • Packages 52-pin PLCC 52-pin PQFP EJ LG 52-Pin PLCC D-3

MT5C2516

Contextual Info: MT5C2516 16K X 16 LA T C H E D SRAM MICRON 16K x 16 SRAM LATCHED SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • 52-Pin PLCC SC-2 52-Pin PQFP (SC-5) ! - H S 5 8 KM “ iuj £ ui : <loim lm > >13 < !o < < o OPTIONS MARKING • Timing 12ns access

0R6BA

Abstract: ETQP6F DC100V 1r8ba 3R4BA SSHTM
Contextual Info: m ft Date of Issue : 2002^4^243 April £4,2002_ #6 ft K # n ^ Classification: LJ New Mfr Change l_ l D igj-kev M A ft tR f t PRODUCT SPECIFICATION FOR INFORMATION Ci p°« £ » Product Description : POWER CHOKE COIL SI p°p p°p # Product Part Number

D9D TRANSISTOR

Abstract: SOT-23 marking D9D marking D9D d9d marking code transistor D9D npn D9D
Contextual Info: UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

LESD9D3.3T5G

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D3.3T5G ESD PROTECTION DIODE Discription The LESD9D3.3T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D5.0T5G ESD PROTECTION DIODE Discription The LESD9D5.0T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

LESD9D12T5G

Abstract: LESD9 d9d3
Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D3.3T5G ESD PROTECTION DIODE Discription The LESD9D3.3T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D3.3T5G ESD PROTECTION DIODE Discription The LESD9D3.3T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D5.0T5G ESD PROTECTION DIODE Discription The LESD9D5.0T5 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D5.0T5G ESD PROTECTION DIODE Discription The LESD9D5.0T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

LESD9D50T5G

Abstract: LESD9
Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D5.0T5G ESD PROTECTION DIODE Discription The LESD9D5.0T5 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D5.0T5G ESD PROTECTION DIODE Discription The LESD9D5.0T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

D9D TRANSISTOR

Abstract: SOT-23 marking D9D transistor d9d npn D9D D9D SOT HMBT8050 marking D9D D9D sot23 d9d marking code sot-23 d9d
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current hFE=150-400 at IC=150mA

Contextual Info: LTC1664 Micropower Quad 10-Bit DAC FEATURES n n n n n n n n n DESCRIPTION Tiny: 4 DACs in the Board Space of an SO-8 Micropower: 59µA per DAC Plus 1µA Sleep Mode for Extended Battery Life Wide 2.7V to 5.5V Supply Range Rail-to-Rail Voltage Outputs Drive 1000pF

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D12T5G ESD PROTECTION DIODE Discription LESD9D12T5G The LESD9D12T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection

LT903

Abstract: LTC1659 11Bit sot-23 diode common anode t4
Contextual Info: LTC1664 Micropower Quad 10-Bit DAC Features Description Tiny: 4 DACs in the Board Space of an SO-8 n Micropower: 59µA per DAC Plus 1µA Sleep Mode for Extended Battery Life n Wide 2.7V to 5.5V Supply Range n Rail-to-Rail Voltage Outputs Drive 1000pF n Reference Range Includes Supply for Ratiometric

Contextual Info: Not Recommended for New Designs VSP VSP3200 VSP3210 320 www.ti.com CCD SIGNAL PROCESSOR FOR SCANNER APPLICATIONS FEATURES DESCRIPTION F INTEGRATED TRIPLE-CORRELATED DOUBLE SAMPLER F OPERATION MODE SELECTABLE: 1-Channel, 3-Channel CCD Mode, 8Msps F PROGRAMMABLE GAIN AMPLIFIER:

Contextual Info: Not Recommended for New Designs VSP VSP3200 VSP3210 320 www.ti.com CCD SIGNAL PROCESSOR FOR SCANNER APPLICATIONS FEATURES DESCRIPTION F INTEGRATED TRIPLE-CORRELATED DOUBLE SAMPLER F OPERATION MODE SELECTABLE: 1-Channel, 3-Channel CCD Mode, 8Msps F PROGRAMMABLE GAIN AMPLIFIER:

Contextual Info: Not Recommended for New Designs VSP3100 VSP 310 For most current data sheet and other product information, visit www.burr-brown.com 14-Bit, 10MHz CCD/CIS SIGNAL PROCESSOR FEATURES DESCRIPTION ● INTEGRATED TRIPLE-CORRELATED DOUBLE SAMPLER ● OPERATION MODE SELECTABLE: