MARKING D6S Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Q68000-A8370

Abstract: CGY MW
Contextual Info: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215

P-SOT-143

Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Contextual Info: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1

D6SBN20

Abstract: a3120 3120A
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D6SBN20 Unit : mm Weight : 6.3g （typ.） Package：5S 200V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

D6SB 80 5

Abstract: D6SB80 marking diode 6a 20/D6SB 80
Contextual Info: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D6SB80 Unit : mm Weight : 6.3g （typ.） Package：5S 800V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

D6SB 80 5

Abstract: 600V-6A D6SB60L d6sb 60l
Contextual Info: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE D6SB60L Unit : mm Weight : 6.3g （typ.） Package：5S 600V 6A 管理番号（例） Control No. 品名 Type No. 特長 D6SB 60L 0264

Contextual Info: rrutm TECHNOLOGY 1i .1R m z ° o '/ u rj/bvcfo 5 V Pow ered RS232 Driver/ Receiver with Shutdown F€ATUR€S D6SCAIPTIOA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1080 is a dual RS232 drlver/receiver which includes a capacitive voltage generator to supply RS232 voltage

Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D6SBN20 Unit : mm Weight : 6.3g （typ.） Package：5S 200V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

Contextual Info: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D6SB80 Unit : mm Weight : 6.3g （typ.） Package：5S 800V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

d6sb 60l

Contextual Info: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE D6SB60L Unit : mm Weight : 6.3g （typ.） Package：5S 600V 6A 管理番号（例） Control No. 品名 Type No. 特長 D6SB 60L 0264

Contextual Info: i T LintAB _ LT1016CS8 TECHNOLOGY ultra Fast Precision Comparator F€ A TU R € S D6SCRIPTIOA Ultra Fast 10ns typ Operates Off Single + 5V Supply, or ± 5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement

thermometer lm324

Abstract: lt10141 hot wire anemometer LT10140 31080 Schaevitz lvdt strain gauge amplifier lm324 4mA-20mA LT1013 lm324 inverter
Contextual Info: 4 £ o - urm TECHNOLOGY 4-^0 LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) F€flTUft€S D6SCRIPTIOH • Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground while Sinking Current ■ Pin Compatible to 1458 and 324 with Precision Specs

Contextual Info: r r u i m Æ Lm f LTC1152 . TECHNOLOGY Rail-to-Rail Input Rail-to-Rail O utput Zero-Drift Op Amp F€flTUR€S D6SCRIPTIOD • Input Common-Mode Range Includes Both Rails ■ Output Swings Rail to Rail ■ Output Will Drive 1k£2 Load The LTC 1152 is a high performance, low power zero-drift

ci sn7402

Abstract: 10GHz OSCILLATOR pulse generator LT1017 failure rate LT1017 LM111 LT1011 Transistor 2N3866 1Hz-10MHz AM6012 LT1016CS8
Contextual Info: r r m r LT1011/LTlOl 1A n TECHNOLOGY Voltage Com parator FCftTURCS D6SCRIPTIOI1 • Pin-Compatible with LM111 Series Devices ■ Guaranteed Max. 0.5mV Input Offset Voltage ■ Guaranteed Max. 25nA Input Bias Current ■ Guaranteed Max. 3nA Input Offset Current

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!

Contextual Info: BBY 57-05W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs

Contextual Info: BBY 57-05W 3 Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode 2
Low series inductance
High capacitance ratio 1
Designed for low tuning voltage operation VSO05561 for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs

A2 diode

Abstract: marking c2 diode VSO05561
Contextual Info: BBY 57-05W Silicon Tuning Diode 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 • For control elements such as TCXOs and VCXOs

Contextual Info: BBY 57-05W Silicon Tuning Diode Preliminary data 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio 2 • Designed for low tuning voltage operation 1 for VCO’s in mobile communications equipment

5962-XXXXXZZ

Abstract: ANI 1015 iso-u1 CLC404 qml-38535 SMD AS500
Contextual Info: REVISIONS DATE rn-MO-DA DESCRIPTION LTR APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 11 12 13 14 PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A

marking D6s

Contextual Info: PD - 9.1323B International IQ R Rectifier • • • • • • • IRL3303S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3303S Low-profile through-hole (IRL3303L) 175°C Operating Temperature Fast Switching

RL2203

Abstract: IRL2203NS m 60 n 03 g10
Contextual Info: PD - 9.1367C International IQ R Rectifier IRL2203NS/L • Logic-Level Gate Drive HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRL2203NS • Low-profile through-hole (I RL2203NL) • 175°C Operating Temperature • Fast Switching