MARKING CRR Search Results

Contextual Info: BAV70W-WS PB FREE PRODUCT DUAL SWITCHING DIODE FEATURE ƽ Small plastic SMD package. ƽ For high-speed switching applications. • We declare that the material of product ƽ compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device

Contextual Info: SIEMENS PNP Silicon Darlington Transistors BCV 28 BCV 48 • For general AF applications • High collector current • High current gain • Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 4 3 Package1)

SiP6333R22D1

Abstract: SiP6333R19D1 SiP6333R22D2 SiP6333R20D3 SiP6333 SIP6332R25D1 BNXXX BGxxx SiP6332R16D1 SiP6332R15D2
Contextual Info: SiP6332/SiP6333 Vishay Siliconix New Product 3-Pin, Low-Power, mP Reset Circuits FEATRES APPLICATIONS D Tight Reset Voltage Tolerances "1.5% D Computers D Low Supply CRrent: < 3 mA D Precision Monitoring of 1.6 V and 2.5 V Power Supply Voltages D Other Threshold Voltage Options Available From 1.5 V to

BKXXX

Abstract: marking CCXXX SiP6332 MARKING SOT23 .215 .235 aexxx
Contextual Info: SiP6332/SiP6333 Vishay Siliconix New Product 3-Pin, Low-Power, mP Reset Circuits FEATRES APPLICATIONS D Tight Reset Voltage Tolerances "1.5% D Computers D Low Supply CRrent: < 3 mA D Precision Monitoring of 1.6 V and 2.5 V Power Supply Voltages D Other Threshold Voltage Options Available From 1.5 V to

SiP6332

Abstract: SIP6332R19D3 SiP6333R20D3 sot-23 MARKING 636 SiP6332R15D1 SiP6332R15D2 SiP6332R15D3 SiP6332R16D1 SiP6332R16D2 SiP6332R16D3
Contextual Info: SiP6332/SiP6333 Vishay Siliconix New Product 3-Pin, Low-Power, mP Reset Circuits FEATRES APPLICATIONS D Tight Reset Voltage Tolerances "1.5% D Computers D Low Supply CRrent: < 3 mA D Precision Monitoring of 1.6 V and 2.5 V Power Supply Voltages D Other Threshold Voltage Options Available From 1.5 V to

5LC4

Abstract: 4vtc diode marking aj smd marking YF smd regulator marking AJ SMD DIODE MARKING NK smd diode marking JC DE5LC405LC4 DE5LC40
Contextual Info: Super Fast Recovery Diode Twin Diode mtmm o u t lin e Package : E-pack DE5LC40 Unit I mm Weight 0.326« T y p crrM o 400V 5A Feature • SMD • Low Noise • trr-50ns • SMD • e y -rx • tr r- 5 0 n s • DC/DC D y / K - Ï • m m , O A .R BE • a e .F A

AG01A

Abstract: marking ag01 AG01 AG01Y AG01Z GAG01 GAG01A GAG01Y GAG01Z
Contextual Info: BL GALAXY ELECTRICAL GAG01Y - - - GAG01A VOLTAGE RANGE: 70- 600 V CURRENT: 0.5-1.0 A HIGH EFFICIENCY RECTIFIERS FEATURES R-1 Low cost Diffused junction Low leakage Low forward voltage drop High crrent capability Easily cleaned with freon, alcohol, lsopropand

SRF 2769

Abstract: circuit diagram of rf transmitter and receiver block diagram for RF transmitter AND RECEIVER diagram remote control receiver and transmitter ir transmitter receiver 2698B SCC2698BC1A84 mr1e scc2698 block diagram of mri machine
Contextual Info: Philips Semiconductors Product specification Enhanced octal universal asynchronous receiver/transmitter Octal UART crr^ROftR DESCRIPTION FEATURES The SCC2698B Enhanced Octal Universal Asynchronous Receiver/Transmitter (Octal UART) is a single chip MOS-LSI

ESPC

Abstract: MSDR SAA7174 R20 marking Upc 141 uPC 251 V17 marking code 110B CRC-10 MC92500
Contextual Info: MOTOROLA Order this document by MC92501/D SEMICONDUCTOR TECHNICAL DATA MC92501 Advance Information ATM Cell Processor The ATM Cell Processor MC92501 is an Asynchronous Transfer Mode (ATM) layer device composed of dedicated high-performance ingress and egress cell

Diode Mark ON B14

Abstract: diode marking w9 ESPC marking c8 SAA7174 marking u12 diode A6 marking 5B17 E20 CORE size Marking B13
Contextual Info: MOTOROLA Order this document by MC92501/D SEMICONDUCTOR TECHNICAL DATA MC92501 Advance Information ATM Cell Processor The ATM Cell Processor MC92501 is an Asynchronous Transfer Mode (ATM) layer device composed of dedicated high-performance ingress and egress cell

3.3V Regulator SOT-89 CB33

Abstract: 3.3V Regulator SOT-89 Ca33 AIC1734-33CXA AIC1734 aic173450cxt 2940 12V voltage regulator MARking cd30 regulator CB20 cd52 equivalent AIC1734-18CXATR
Contextual Info: AIC1734 300mA Low Dropout Linear Regulator FEATURES DESCRIPTION Low Dropout Voltage of 470mV at 300mA Output Current 3.0V Output Version . Guaranteed 300mA Output Current. Low Ground Current at 55µA. 2% Accuracy Output Voltage of 1.8V/ 2.0V /2.5V /2.7V/ 3.0V/ 3.3V/ 3.5V/ 3.7V/ 3.8V/ 5.0V/

CRA034R

Contextual Info: Thick Film Array Chip Resistor—CRA Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy)

Microchip Technology Inc

Abstract: Memory Serial EEPROM Errata 22067J microcontrollers low-power microchip events 8-BIT
Contextual Info: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical

Contextual Info: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical

SOT-323

Abstract: M1MA141KT1G M1MA142KT1G marking mh sot323 LM1MA142K
Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Diode marking CODE 5M

Abstract: M1MA141KT1G M1MA142KT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

11l02

Abstract: 11L04 11-L1 B517 11LCXX d54 marking DS22067 11A01T 11L01 11A160
Contextual Info: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical

B517

Abstract: 11A160 11l02 Bullet 2 SOT-23 SAK B-517 11AA010T 11LC020 d44 marking soic 8 d54 marking
Contextual Info: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology - 1 mA active current, typical

11l02

Abstract: 11L161 XW 3pin B517 DS22067 B-517 11L01 marking XW 3pin 024X8 11L16
Contextual Info: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

c125t

Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Contextual Info: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-

imo inverter cd 750

Abstract: Capacitor 226 25k 412 024C 064R CR0805 CR1206 CR1210 tv sony ic 1213 Ever Ohms chip resistor 226 20K 340
Contextual Info: ' T A & L E . ' & F ' G Q M V E K V S • Thick Film Chip Resistor - C R Series. 2 ■ Low Ohm Chip Resistor. 5

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj