MARKING CODE X18 Search Results

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

sony tsmc

Abstract: CXK77P18L80AGB CXK77P36L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A
Contextual Info: SONY CXK77P36L80AGB / CXK77P18L80AGB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x18 4/42/43/44 Preliminary Description The CXK77P36L80AGB (organized as 262,144 words by 36 bits) and the CXK77P18L80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

7x17

Abstract: CXK77P18L80AGB CXK77P36L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A
Contextual Info: SONY CXK77P36L80AGB / CXK77P18L80AGB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x18 4/42/43/44 Preliminary Description The CXK77P36L80AGB (organized as 262,144 words by 36 bits) and the CXK77P18L80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

PILKOR PCX2 337 MKP

Abstract: PILKOR WK PCX2 337 MKP 470n 275v MKP PILKOR PCX2 337 PCX2 337 470n m 275v x2 mkp 470n X2 XcxxX PCX2 337 MKP pilkor
Contextual Info: Pilkor components Interference Suppression film capacitors PCX2 337 MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5 mm QUICK REFERENCE DATA Capacitance range E6 series * 0.01㎌ to 3.3㎌ Capacitance tolerance ±1 0 %, ±20 % Rated (AC) voltage 50 to 60 Hz

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . ALUMINUM CAPACITORS 159 PUL-SI Series Capacitors - With Ultra Long Life Aluminum Capacitors, Power, Ultra Long Life, Snap-In RKING KEY BENEFITS • New feature! 500 V products with a useful life of 3000 h at +105 °C

hitachi zener do-35

Abstract: zener diode BLUE BAND Hitachi DSA00776 HZT33 HZT7A3 SC-48 HZT7A1 DO-35 BLUE CATHODE zener diode marking code 40 hitachi Zener Diode marking code
Contextual Info: ADE-208-131A Z HZT7 Monolithic IC Zener Diode for Temperature Compensation Rev. 1 Apr. 1995 Features Outline • Lower temperature coefficient of the reference voltage. (γZ = ±0.002 to ±0.01 %/°Cmax) HZT 7 1 2 Type No. Cathode band Ordering Information

smd code marking x18

Abstract: MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: 195u MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate

smd transistor marking HT1

Abstract: MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM
Contextual Info: 576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h
Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate

63D12

Abstract: AL4V183 AL4V185
Contextual Info: AL4V183 AL4V185 Data Sheets Version 1.0 AL4V183/AL4V185 Amendments 11.07.02 Preliminary Version 1.0 AL4V183/AL4V185 April 16, 2002 2 AL4V183/AL4V185 AL4V183/AL4V185 1k x18, 4k x18 16K-Bit, 64K-Bit Line FIFO Contents: 1.0 Description 4

MICRON BGA PART MARKING

Abstract: RLDRAM 09005aef809f284b MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MT49H16M36

Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MT49H16M18

Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate

09005aef815b2df8

Abstract: MT49H32M18C
Contextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 19.2 Gb/s peak bandwidth (x18 at 533 MHz clock

RLDRAM

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

MT49H16M18C

Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

MT49H16M18C

Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

smd transistor marking HT1

Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

RLDRAM mt49h

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

MICRON BGA PART MARKING

Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: NF 034 T6N 700 MT49H16M18
Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: amd catalog MT49H32M18C
Contextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock

MT49H32M18C

Contextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock