7X17 Search Results

DB82

Contextual Info: System LED Drivers for Mobile Phones 7x17 Max. Dot Matrix LED Display Driver BD26503GUL ●Description BD26503GUL is “Matrix LED Driver” that is the most suitable for the cellular phone. It can control 7x17(119 dot) LED Matrix by internal 7-channel PMOS SWs and 17-channel LED drivers.

50REF

Abstract: K7N801845A K7N803645A
Contextual Info: K7N803645A K7N801845A PRELIMINARY 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. Draft Date May. 24. 2000 Remark Preliminary Add 119BGA 7x17 Ball Grid Array Package

K7N803649A

Abstract: 50REF K7N801849A
Contextual Info: K7N803649A K7N801849A PRELIMINARY 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. Draft Date May. 24. 2000 Remark Preliminary Add 119BGA 7x17 Ball Grid Array Package

Contextual Info: System LED Drivers for Mobile Phones 7x17 Max. Dot Matrix LED Display Driver BD26503GUL ●Description BD26503GUL is “Matrix LED Driver” that is the most suitable for the cellular phone. It can control 7x17(119 dot) LED Matrix by internal 7-channel PMOS SWs and 17-channel LED drivers.

Kyoritsu 3301

Abstract: Kyoritsu KNW-242 lisn emco EMCO 3115 3825 lisn UHALP9108A KNW-242 schwarzbeck LISN field strength meter HP 8568B
Contextual Info: • i — h Open Site — h Open Site FCC, VCCU ENs CISPR. Electric and Magnetic Field strength based on FCC, VCCI, EN, CISPR, etc. 7X17m * $11 K 7 pU - > Ground Plane 7 x17m punching metal £ — > 7^ — )\s ¡S il2m Biprfi200kg Turntable 2 m (diameter) 200 kg (load-bearing capacity)

50REF

Abstract: K7M801825A K7M803625A
Contextual Info: K7M803625A K7M801825A 256Kx36 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 24. 2000 Preliminary 1.0 1. Final spec Release. 2. Add 119BGA 7x17 Ball Grid Array Package

50REF

Abstract: K7N801809A K7N803609A
Contextual Info: K7N803609A K7N801809A 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 24. 2000 Preliminary 1.0 1. Final spec Release. 2. Add 119BGA 7x17 Ball Grid Array Package

DOT matrix LED display DRIVER

Abstract: DB82 BD26502GUL diode da85 DB46 DAE4 DB33 circuit diagram DB83 Matrix LED Display Driver DB33 DIODE
Contextual Info: System LED Drivers for Mobile Phones 7x17 Max. Dot Matrix LED Display Driver BD26502GUL No.10041EAT01 ●Description BD26502GUL is “Matrix LED Driver” that is the most suitable for the cellular phone. It can control 7x17(119 dot) LED Matrix by internal 7-channel PMOS SWs and 17-channel LED drivers.

50REF

Abstract: K7N801801A K7N803601A
Contextual Info: K7N803601A K7N801801A 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 24. 2000 Preliminary 1.0 1. Final spec Release. 2. Add 119BGA 7x17 Ball Grid Array Package

FRH-6

Contextual Info: Doc No. TA4-EA-05178 Revision. 3 Product Standards AN32151A http://www.semicon.panasonic.co.jp/en/ 7 x 17 Dots Matrix LED Driver LSI FEATURES DESCRIPTION • 7 x 17 LED Matrix Driver Total LED that can be driven = 119 AN32151A is a 7 x 17 LED Matrix Driver equipped with

K7M643635M-Q

Contextual Info: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz

Contextual Info: Ordering number : ENA1359A LV5230LG Bi-CMOS IC 7chx17ch LED Driver Overview The LV5230LG is a dot-matrix LED driver IC for cell phones. Features • 7×17 dot-matrix LED driver 5×15 dot-matrix supported • Each dot can be set for display over the serial bus.

K7M321825M

Abstract: K7M323625M
Contextual Info: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAM TM 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

43bh

Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Contextual Info: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words

NC-2H

Abstract: K7B161825A K7B163225A K7B163625A
Contextual Info: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

K7N161801A

Abstract: K7N163201A K7N163601A
Contextual Info: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

K7P801866M

Abstract: SA12 SA13
Contextual Info: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999

Contextual Info: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

CXK77L18R160GB-3

Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
Contextual Info: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

K7M801825B

Abstract: K7M803625B
Contextual Info: K7M803625B K7M801825B Preliminary 256Kx36 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Flow Through NtRAM TM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 18. 2001 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K7B161825A

Abstract: K7B163625A
Contextual Info: K7B163625A K7B161825A Preliminary 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers.

IS61LPD51218A

Abstract: IS61LPD25636A IS61VPD25636A IS61VPD51218A
Contextual Info: ISSI IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

IS61LPS25632A

Abstract: IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A
Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: K7P803611M K7P801811M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999