MARKING CODE TRANSISTOR N Search Results

marking C3Z

Abstract: marking C3Z SOT23 CMPTA44 npn 400V sot-23
Contextual Info: Central CMPTA44 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z

bcp55

Abstract: BCP5216 BCP52-16 BCP55-16
Contextual Info: BCP52-16 LOW POWER PNP TRANSISTOR • ■ ■ ■ Ordering Code Marking BCP52-16 BCP5216 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BCP55-16

Contextual Info: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

Transistor BFR 91

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 91 • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 91 BFR 91

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

2SA1036K

Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

TRANSISTOR marking 789 code

Abstract: PM744
Contextual Info: SIEMENS BCR 523 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=1kQ,R2=10kQ PM744 Type Marking Ordering Code Pin Configuration BCR 523 XGs C62702-C2487 1=B Package 2=E 3=C SOT-23

TRANSISTOR S2d

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

702 Z TRANSISTOR

Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
Contextual Info: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B

519 MARKING CODE

Abstract: 519 SOT23
Contextual Info: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7k£2 FI nr let Ordering Code Pin Configuration XKs UPON INQUIRY 1=B Package m Marking BCR 519 fO II Type 3=C

D1733

Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Contextual Info: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

B3 transistor

Abstract: KSA1203 KSC2883
Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

Contextual Info: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings

transistor BF 199

Abstract: BF 199 bf199 transistor A11A
Contextual Info: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter

Contextual Info: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type

Contextual Info: SIEMENS NPN Silicon RF Transistor BF 763 • For low-noise amplifiers and oscillators up to 1 GHz Type Marking Ordering Code BF 763 - Q62702-F766 Pin Co nfigurai ion 1 2 3 B E Package1 TO-92 C Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

transistor marking code wts

Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
Contextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23

sot marking code ZS

Abstract: transistor bf 290
Contextual Info: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration

xds pnp

Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23

XS marking code

Contextual Info: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kQ JL TT BCR 569 XLs Pin Configuration UPON INQUIRY 1=B Package 2= E o Marking Ordering Code II co Type IT