MARKING CODE T33 TRANSISTOR Search Results

PQC5001T

Abstract: PPC5001T FO-102
Contextual Info: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.

2SD1664

Abstract: marking 2sd1664
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code

Contextual Info: I 1 N AMER PHILIPS/DIS.CRETE MAINTENANCE TYPE ObE D bbSBTBl 0014^51 2 • LKE32002T LKE32004T T -Si-os' ~ MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

Contextual Info: _ I I N AMER PHILIPS/DISCRETE ObE D • _ bbS3T31 OD1SD41 1 MAINTENANCE TYPE MKB12140W T -3 3 -IS PULSED MICROW AVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

MKB12140W

Abstract: common base amplifier circuit designing
Contextual Info: _I I N AMER P HI LI PS/DISCRETE ObE D _ • 0015041 1 MAINTENANCE TYPE MKB12140W T - 33—iS PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended for IF F applications.

Contextual Info: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU

RTC11175Y

Abstract: MRB11175Y
Contextual Info: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,

transistor 135b

Contextual Info: I I N AMER P H I L I P S / D I S C R E T E ObE D bbS3131 D01S171 3 • RV3135B5X P U L S E D P O W E R T R A N S IS T O R F O R S -B A N D R A D A R N-P-N transistor for use in common-base pulsed power amplifiers for S-band radar 3,1 to 3,5 GHz . Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

G9SX-BC202

Abstract: AD322 g9sx-bc basic wiring diagram contactor EX Emergency Stop Drawing G9SX-AD322-T15 4 pin terminal block connector BC202 EN61508 D40A
Contextual Info: Flexible Safety Unit G9SX CSM_G9SX_DS_E_5_1 Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. • Solid-state outputs excluding Expansion Units . • Detailed LED indications enable easy diagnosis.

Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bb53T31 0 0 1 5 111 7 ■ PTB42001X PTB42002X J L T - 5 3 -/2 ? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz,

Contextual Info: • bbS3R31 00244b2 451 ■ APX N AMER PHILIPS/DISCRETE BC849 BC850 b7E 1 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage V g E = 0 Collector-emitter voltage (open base)

D40A-1C

Abstract: D40A-1C2 G9SX-NSA222-T03 G9SX-NS202 G9SX-NSA222-T03-RT G9SP-N10S omron g9sx-nsa g9sx-nsa222 z922 D40A
Contextual Info: Compact Non-Contact Door Switch/Flexible Safety Unit D40A/G9SX-NS CSM_D40A_G9SX-NS_DS_E_5_1 Electronic Detection Mechanism for Better Stability in Non-contact Door Switch Operation Connection is also possible to a G9SP Safety Controller. •Complies with ISO 13849-1 Safety Category 3/PLd .

r3305

Abstract: PTB32005X PTB32001X PTB32003X
Contextual Info: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

welding machine wiring diagram

Abstract: g9sx-BC202 hot air gun fan controller circuit G9SX-AD322-T15 g9sx-bc 24vdc motor forward reverse control diagram s34 zener diode varistor S14 k1 circuit diagram of door interlock system en61558
Contextual Info: Flexible Safety Unit G9SX Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. ■ Solid-state outputs excluding Expansion Units . ■ Detailed LED indications enable easy diagnosis. ■ TÜV Product Service certification for compliance

MARKING HRA

Abstract: 2SD2171S Wr1c 2SD2351
Contextual Info: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors Medium Power Transistor 25V, 1.2A 2SD2537 / 2SD2171S I •Feature* •Absolute maximum ratings (Ta=25fc) 1 ) High DC current gain. 2) High emitter-base voltage. (Vcbo=12V Min.) 3 ) Low VcE(iai). (Max. 0.3V at lc/la=500/10mA)

bel 187 transistor

Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
Contextual Info: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.

440r-zbr520az1

Abstract: guardmaster safety relay 440r-zbr520az1 GuardMaster 440r allen-bradley safety relay 700-ZBR520AZ1 Safety Relay GL324 800z-gl2 440r 800Z-GN GuardMaster
Contextual Info: Bulletin 800Z Zero-Force  Touch Buttons 10 Type 4/4X/13, IP66 Bulletin 800Z Zero-Force Touch Buttons • • • • IEC and NEMA Style General Purpose Line Heavy Industrial Line Types 4/4X/13 and 4/13 IP66 • Internationally Rated Ergonomic Touch

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

TPS73101-EP

Abstract: TPS73115-EP TPS73150-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP TPS73133-EP TPS73130-EP
Contextual Info: TPS731xx www.ti.com . SBVS034M – SEPTEMBER 2003 – REVISED AUGUST 2009 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection

SOT-23 MARKING PWYQ

Abstract: T31 Marking sot regulator PWYQ TPS73115-EP TPS73150-EP TPS73101-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP
Contextual Info: TPS731xx www.ti.com . SBVS034M – SEPTEMBER 2003 – REVISED AUGUST 2009 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

application for bt 151

Abstract: LTE42005S LTE42008R R3305
Contextual Info: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich