RTC11175Y Search Results

Contextual Info: 1 N AMER PHILIPS/DISCRETE ObE D • ^53=131 0D1SDS1 >4 ■ MRB11175Y T - 3 3 - *T PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,

RTC11175Y

Abstract: MRB11175Y
Contextual Info: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,