MARKING CODE SSH Search Results

bss 17 transistor

Abstract: Q62702-S624
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor VDS lD ^ D S o n BSS 119 =100V = 0 .1 7 A = 6.0 Q • N channel • Enhancement mode • Package: SOT-231) Type Marking Ordering code for version in bulk Ordering code for version on 8-mm tape BSS 119 sSH Q62702-S624

Q67000-S007

Abstract: E6327 marking BSs marking sSH sot-23
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

marking sSH sot-23

Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information

marking sSH sot-23

Abstract: E6327 Q67000-S007 marking 119 marking BSs
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

Q67000-S007

Abstract: bss 108 E6327 SOT23 marking GF marking BSs BSS119
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

sot-223 code marking

Abstract: marking sSH sot-23 SAs SOT23 marking code SOT23 SSi smd marking code SSs code marking ssi sot-23 marking code SOT23 SSs MARKING code SSi SOT23 SAs SOT-23 marking marking BSs sot23
Contextual Info: S IEM E N S SIPMOS Kleinsignaltransistoren SIPMOS® Small-Signal Transistors SMD-Bauformen SMD types Typ Type Vbs m ax Was(th) ^D(max) ^D S(on)m ax Ptot V V mA n mW N-Kanal-Anreicherungstypen Bestellnummer Ordering code Gehäuse Package Stempel Marking Bild

E6327

Abstract: BSS 7002 BSS229 Q62702-S658 E6433 BSS84-E6327 bestellnummern-verzeichnis Q62702-S303 E-6433 BSS129E6296
Contextual Info: S IEM EN S Alphanumerisches Typenverzeichnis Types in Alphanumerical Order Type Version Marking Ordering Code BRT 1 1 H tube - C67079-A1000-A6 589 BRT 1 1 M tube - C67079-A1000-A10 589 BRT 1 2 H tube - C67079-A1001-A6 589 BRT 12 H Option 1 tube - C67079-A1041-A5

Contextual Info: SSH210 CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Features — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency — High current capability, low VF

Contextual Info: SSH210 CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Features — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency — High current capability, low VF

Contextual Info: SSH210 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: SSH210 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Pb RoHS COMPLIANCE Features ­ For surface mounted application ­ Easy pick and place ­ Metal to silicon rectifier, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low VF

Contextual Info: SSH210 CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Pb RoHS COMPLIANCE Features — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency —

45N20B

Abstract: 45N20
Contextual Info: SSH45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

marking sSH sot-23

Abstract: marking code 3c diode MARKING CODE SSH marking b1d
Contextual Info: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SUPERmini SILICON SCHOTTKY DIODES CMSSH-3: CMSSH-3A CMSSH-3C CMSSH-3S Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini™ surface mount pack­

CM2140

Contextual Info: - AD V AN CED I N FORM ATI ON - Sm a r t M e sh W ir e le ssH ART TM LTP5 9 0 3 - W H R 2.4 GHz 802.15.4 Embedded Network Manager About SmartMesh WirelessHART SmartMesh WirelessHART products are designed for the harshest industrial environments, where low power, reliability, resilience and

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

mini 123 card reader decoding software

Abstract: TAG35 tjc3 BS2848 tag6-100 SS2343 BS6746C polyolefin film TIA606 TAG8-100
Contextual Info: Identifying • LABELING SOFTWARE . . . . . . . . . . . . . . . . . . . . .102 • COMPUTER PRINTABLE LABELS AND SYSTEMS . . . . . . . . . . . . . . . . . . . . . . . . . . .106 • PREPRINTED LABELING CARDS, BOOKS, AND TAPE . . . . . . . . . . . . . . . . . . . . . . .135

mipi PCB layout

Abstract: USB3 esd protection
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U4ULC Ultra-low Capacitance ESD / Transient Protection Array ESD3V3U4ULC Data Sheet Revision 1.0, 2011-05-19 Final Industrial and Multi-Market Edition 2011-05-19 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U4ULC Ultra-low Capacitance ESD / Transient Protection Array ESD3V3U4ULC Data Sheet Revision 1.0, 2012-01-10 Final Industrial and Multi-Market Edition 2012-01-10 Published by Infineon Technologies AG 81726 Munich, Germany

mipi PCB layout

Abstract: PCB Layout DISPLAYPORT ESD3V3U4ULC 91fP marking code z2 COOLSET
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U4ULC Ultra-low Capacitance ESD / Transient Protection Array ESD3V3U4ULC Data Sheet Rev. 1.2, 2012-07-03 Final Power Management & Multimarket Edition 2012-07-03 Published by Infineon Technologies AG 81726 Munich, Germany

xgold

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U4ULC Ultra-low Capacitance ESD / Transient Protection Array ESD3V3U4ULC Data Sheet Rev. 1.2, 2012-07-03 Final Power Management & Multimarket Edition 2012-07-03 Published by Infineon Technologies AG 81726 Munich, Germany

S2L60

Abstract: loa marking code
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE S2L60 Unit : mm Package : AX10 W eight O .ffig iT y p 6 0 0 V 1 .5A Feature 26.5 • r a M ± FRD • High Voltage Super FRD • ñ S 'íX • Low Noise • trr=50ns • trr=50ns .1 cR4 26.5 -O . - 2 - * ftm iiA iK m

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U4ULC Ultra-low Capacitance ESD / Transient Protection Array ESD3V3U4ULC Data Sheet Rev. 1.6, 2013-02-20 Final Power Management & Multimarket Edition 2013-02-20 Published by Infineon Technologies AG 81726 Munich, Germany