MARKING CODE RY 1408 Search Results

Contextual Info: FTR-K1 SERIES MINIATURE RELAY 2 POLES - 1 to 2A for signal switching RY Series n FEATURES Ultra high sensitivity UL, CSA recognized (see note 2) l Conforms to FCC rules and regulations Part 68 - Surge strength 1,500 V l High dielectric strength type available (RY-WF type)

relay miniature 110 vdc

Abstract: MBB relay LR35579
Contextual Info: MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING RY SERIES RoHS Compliant • FEATURES ● ● ● ● ● ● ● ● ● ● Ultra high sensitivity UL, CSA recognized Conforms to FCC rules and regulations Part 68 —Surge strength 1,500 V High dielectric strength type available (RY-WF type)

MBB relay

Abstract: relay 0,5A 125VAC 2A 30VDC RY 620 RY-5 Transistors marking WZ
Contextual Info: MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING RY SERIES RoHS compliant n FEATURES Ultra high sensitivity UL, CSA recognized l Conforms to FCC rules and regulations Part 68 —Surge strength 1,500 V l High dielectric strength type available (RY-WF type)

relay miniature 110 vdc

Abstract: LR35579 MBB relay
Contextual Info: MINIATURE RELAY 2 POLES—1 to 2 A FOR SIGNAL SWITCHING RY SERIES RoHS compliant n FEATURES Ultra high sensitivity UL, CSA recognized l Conforms to FCC rules and regulations Part 68 —Surge strength 1,500 V l High dielectric strength type available (RY-WF type)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-5E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

SUPER CHIP

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-4E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-70/90/12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

FPT-48P-M19

Abstract: FPT-48P-M20 12PW 38
Contextual Info: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

MBM29LV800TA-70

Abstract: MBM29LV800BA-90PFTN
Contextual Info: MBM29LV800TA -70/-90/ MBM29LV800BA -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV800TA -70/- /MBM29LV800BA Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.

W49L401

Abstract: W49L401T
Contextual Info: W49L401 T 256K x 16 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP

tpec

Abstract: XX555 W49L401 W49L401T
Contextual Info: W49L401 T 256K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on

MBM29LV080A

Abstract: SA10 SA11 SA12 SA13 SA14
Contextual Info: MBM29LV080A-70/90 Data Sheet Retired Product -70/90 MBM29LV080A Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

MBM29LV002BC

Abstract: MBM29LV002TC
Contextual Info: MBM29LV002TC -70/-90/ MBM29LV002BC -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV002TC Cover Sheet /MBM29LV002BC -70/- This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.

SA11

Abstract: SA12 SA13 SA14 MBM29LV080A SA10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-4E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/-90/-12 • FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements

MBM29LV004TC

Contextual Info: MBM29LV004TC/MBM29LV004BC-70/-90 Data Sheet Retired Product MBM29LV004TC/MBM29LV004BC -70/-90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20864-6E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29LV004TC/MBM29LV004BC-70/-90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

MBM29LV200BC

Abstract: MBM29LV200TC
Contextual Info: MBM29LV200TC-70/-90/ MBM29LV200BC -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV200TC Cover Sheet /MBM29LV200BC -70/- This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90/MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA