MARKING CODE LOU Search Results

Contextual Info: HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Major Applications 3 1.2. Features 4 1.3. Marking Code 4 1.4. Operating Junction Temperature Range TJ 4 1.5. Hall Sensor Package Codes 4 1.6. Solderability 4 4 2. 2.1. Functional Description

marking F02

Contextual Info: DTD123TK NPN 500mA 40V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCEO IC R 40V 500mA 2.2kW SMT3 Collector Base Emitter DTD123TK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

Contextual Info: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: 2SB1561 Datasheet PNP -2.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2.0A MPT3 Base Collector Emitter 2SB1561 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2391 3) Low VCE(sat) VCE(sat)= -0.35V(Max.)

D1918

Contextual Info: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V

B1275

Contextual Info: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V

SCS215AG

Contextual Info: SCS215AG SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A QC 23nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS220KG

Contextual Info: SCS220KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 20A QC 65nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS215AJ

Contextual Info: SCS215AJ Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC LPT L <TO-263AB> (1) (2) (3) (4) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible

Contextual Info: QSH29 NPN 500mA 60V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter Value VCEO IC R 60V 500mA 10kW TSMT6 (6) (5) (4) (1) (2) (3) QSH29 (SC-95) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of

Contextual Info: SCS210KE2 SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A/10A* QC 17nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

SCS215KG

Contextual Info: SCS215KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 15A QC 51nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS230KE2

Contextual Info: SCS230KE2 SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 15A/30A* QC 51nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: 2SD2391 Datasheet NPN 2.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2.0A MPT3 Base Collector Emitter 2SD2391 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1561 3) Low VCE(sat) VCE(sat)=0.35V(Max.)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

C5001 transistor

Abstract: transistor C5001 2SC5001 transistor marking C5001
Contextual Info: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.)

C5103

Abstract: transistor C5103 C5103 Transistor
Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)

marking g8

Abstract: SOT-353 marking code G8 SOT-353 marking code B2 rohm umg8n
Contextual Info: EMG8 / UMG8N NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW 47kW (2) (1) (4) (4) (1) (2) lFeatures (3) (5) EMG8 (SC-107BB) UMG8N SOT-353 (SC-88A)

Contextual Info: DTB743X series PNP -200mA -30V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -30V -200mA 4.7kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB743XM (SC-105AA) lFeatures DTB743XE SOT-416 (SC-75A) lInner circuit

Contextual Info: 2SB1689 Datasheet PNP -1.5A -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC 12V 1.5A UMT3 Collector Base Emitter 2SB1689 SOT-323 SC-70 lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low.

A1834

Contextual Info: 2SA1834 Datasheet PNP -10A -20V Middle Power Transistor lOutline Parameter Value VCEO IC -20V -10A Collector CPT3 Base Emitter 2SA1834 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5001 3) Low VCE(sat) VCE(sat)= -0.25V(Max.)

Contextual Info: QST3 Datasheet PNP -5A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -5A TSMT6 6 (5) (4) (1) (2) (3) QST3 (SC-95) lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low VCE(sat) VCE(sat)= -0.25V(Max.)

Contextual Info: UMH14N / IMH14A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Tr1 and Tr2 UMT6 SMT6 (6) (4) (5) (5) 50V 100mA 47kW (6) (4) (3) (1) (2) (2) (1) (3) IMH14A SOT-457 (SC-74) UMH14N SOT-353 (SC-88)