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    MARKING CODE LN1E Search Results

    MARKING CODE LN1E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet
    68305-001LF
    		Amphenol Communications Solutions Din Accessory Coding PDF
    65197-001LF
    		Amphenol Communications Solutions Din Accessory Coding Part PDF
    70275-001LF
    		Amphenol Communications Solutions 70275-001LF-METRAL FEM CODING PART PDF
    91290-101LF
    		Amphenol Communications Solutions Board-to-Board Coding System, Receptacle Key, LF PDF

    MARKING CODE LN1E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor marking code 12W 12

    Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
    Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		lnd150o-243aalnd150n3lnd150n8+9lnd150ndot-89100natransistor marking code 12w 12ln1emosfet marking 12wigss 100na vgs 0vdepletion n-channel mosfet to-92mosfet igss 100na vds 20v PDF

    ln1e

    Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
    Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		lnd150o-243aalnd150n3lnd150n8+8lnd150ndot-89100naln1edepletion n-channel mosfet to-92marking code ln1emosfet igss 100na vds 20vdepletion mode ramp generator PDF

    transistor marking code 12W SOT-23

    Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		lnd150dsfp-lnd150c041114transistor marking code 12w sot-23 PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		lnd150dsfp-lnd150a030609transistor marking code 12w sot-23+812w sot 23 package marking codemarking 12w sot2312w marking code of transistor sot 2312w sot-23sot-23 12w12w marking sot23ln1end150 PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		lnd150dsfp-lnd150a051909transistor marking code 12w sot-23+912w sot 23 package marking codemarking 12w sot2312w marking code sot 23ln1e12w marking code sot2312w marking sot2312w marking code of transistor sot 23sot-23 marking 12w12w sot-23 PDF

    transistor marking code 12W SOT-23

    Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		lnd150dsfp-lnd150a012809transistor marking code 12w sot-23+912w marking code sot 2312w sot 23 package marking codemarking 12w sot2312w marking sot23fet sot-89 marking codesot marking 213ln1e12w marking code of transistor sot 23marking code 12w sot-23 PDF

    transistor marking code 12W SOT-23

    Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		lnd150dsfp-lnd150b021110transistor marking code 12w sot-23+9marking 12w sot2312w sot 23 package marking code12w marking code sot 2312w marking sot2312w marking code sot23ln1elnd150k1-g12w 0812w marking code of transistor sot 23 PDF

    40822

    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


    Original     		lnd150dsfp-lnd150b02111040822 PDF

    LN1E

    Abstract: Marking code mps
    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		lnd150dsfp-lnd150a0912908ln1e+1marking code mps PDF

    LN1E

    Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		lnd150dsfp-lnd150a10310808ln1e PDF

    dual-gate

    Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


    OCR Scan     		dual-gate PDF

    gi 9644 diode

    Abstract: INTELDX4 write-through
    Contextual Info: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit


    OCR Scan     		100-mhz32-bit16k-byteintel486+3168-ollergi 9644 diodeinteldx4 write-through PDF