MARKING CODE LG TRANSISTORS Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1* MSD601-ST1 COLLECTOR •Motorola Preferred Device n D IJ BASE EMITTER 2 MAXIMUM RATINGS TA = 25“C Rating 1 Symbol Value Unit Collector-Base Voltage

p592

Contextual Info: Central" MMPQ6700 Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON QUAD TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ6700, consisting of two complementary pairs of transis­ tors, available in the SOIC-16 surface mount package, is designed for general purpose amplifi­

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

transistors marking C3Z

Contextual Info: Centrar CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.

Contextual Info: bbSB^l 00c?Sb34 34b H A P X N AMER PHILIPS/ DIS CRET E BST39 BST40 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended fo r use in am plifier and switching applications. Complementary p-n-p types are BST15/16.

BSR12

Abstract: sot-23 MARKING CODE ZA DGSS
Contextual Info: m □ □¡255b4 0T5 H A P X N AMER PHILIPS/DISCRETE BSR12 b7E » SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a m icrom iniature plastic envelope. It is intended fo r high-speed, saturated switching applications fo r industrial service in th ick and th in -film circuits.

BST60

Abstract: BST50
Contextual Info: BST50 BST51 BST52 J V N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 package. P-N-P complements are BST60, 6 1 ,6 2 respectively.

BST62

Abstract: BST60 BST61
Contextual Info: • bb53T31 DD2Sb41 4flb H A P X N AMER PHILIPS/DISCRETE BST60 BST61 BST62 b7E ]> JV P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a microminiature plastic SOT-89 envelope.

marking code SG transistors

Abstract: marking code SG transistor
Contextual Info: Central CMPTA42 NPN CMPTA92 PNP TM Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M PTA42, C M PTA92 ty p e s are complementary surface mount epoxy molded silicon planar epitaxial transistors designed

A1626

Abstract: transistor b 1624 BSV52 marking code transistors BSV52
Contextual Info: • ^53=131 OOESbb? 7T2 * A P X N AMER P H I L I P S / D I S C R E T E BSV52 A_ b7E D SILICON PLANAR EPITAXIAL TRANSISTORS • High-speed switching N-P-N transistor in a microminiature plastic envelope. It is intended for very high-speed saturated switching in thick and thin-film circuits.

BSR12

Contextual Info: ^53131 DD3S5b4 0T2 H A P X N AUER PHI LIP S/DISCRETE BSR12 E7E D J V SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope. It is intended for high-speed, saturated switching applications for industrial service in thick and thin-film circuits.

1N916

Abstract: BSR15 BSR16
Contextual Info: 711002b O D b ^ S a i TD3 • PHIN BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a m icrom iniature plastic envelope, intended fo r medium power switching and general purpose am plifier applications in th ic k and th in -film circuits.

sot-23 marking LC

Contextual Info: Central CMPT6428 CMPT6429 IIV Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M PT6428, C M PT6429 ty pes are N P N Si Iico n Transistors manufactured by the epitaxial planar process, epoxy molded in a surface

1Y SOT-23

Contextual Info: BF821, BF823 PNP Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. A s complementary types, the NPN transistors BF820 and BF822 are recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter.

Contextual Info: • bbS3^31 00353^1 DSD H A P X N AUER PHILIPS/DISCRETE BSR30 to 33 L7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.

bc547 smd transistor

Abstract: smd transistor BC557 TRANSISTOR SMD CODE LG BC547 smd smd transistor MARKING lg BC547 matched pair lg smd transistor
Contextual Info: • b b s a ' m QQ2M5S7 T75 * A P X N AUER PHILIPS/DISCRETE BCV65 BCV65B b7E D _ J V SILICON PLANAR TRANSISTORS A matched pair of P-N-P and N-P-N crystal, based on the BC557 and BC547, in a microminiature SOT-143 envelope. Complementary crystals give advantages in P.C.B. layout using S.M.D. technology.

CMPT6517

Abstract: CMPT6520
Contextual Info: Central C M P T 6517 NPN C M P T 6520 PNP Sem iconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CEN TR AL S E M IC O N D U C TO R C M P T 6517, C M P T 6520 types are com plementary silicon transistors manufactured by the epitaxial planar process,

BST60

Abstract: BST62 10S050 BST50 BST51 BST52 BST61 GG-25 sot89 "NPN TRANSISTOR" BJ SOT-89
Contextual Info: • bbsa^ai GG25b41 4ßb ■ APX N AMER PHIL IPS/DISCRETE BST60 BST61 BST62 b7E ]> P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a microminiature plastic SOT-89 envelope.

Contextual Info: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value

Contextual Info: •I bbSa'IBI 0D245T3 TOb APX N AMER PHILIPS/DISCRETE BCW81 b7E ]> J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK REFERENCE DATA

Contextual Info: b b S B ^ l 0024515 51b « A P X N AtlER PHILIPS/DISCRETE b7E BCF81 V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended fo r low level, low noise general purpose applications in thick and thin-film circuits.

Contextual Info: bb53T31 0PS4SST 64fl « A P X N AHER PHILIPS/DISCRETE b?E BCV71 BCV72 J> J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

BCF70

Abstract: MAX45V
Contextual Info: 711002b DDbfl475 Ü7b IPHIN BCF70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level, low noise applications in thick and thin-film circuits. QUICK REFERENCE DATA D.C. current gain at Tj = 25 °C

sd601

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN G eneral Purpose A m plifier Transistors S urface Mount M SD601-RT1* MSD601-ST1 COLLECTOR n ‘ M otorola Preferred D evice D MAXIMUM RATINGS TA = 25“ C Ü 2 1 BASE EMITTER 2^1 1 Rating Symbol Value Unit Collector-Base Voltage