MARKING CODE LA SOT363 Search Results

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference

PJ4N

Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance

PJ4N

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

K2765

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

sot-363 n-channel mosfet

Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0 • RDS(ON), VGS@4.0V,IDS@10mA=5.0 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference

Voltage-HSMS-282A

Abstract: SOT-363 marking jf SOT 363 marking CODE LA HSMS-280A marking CODE 001 hsms280a LA sot363 HSMS2820 LF 28-2P 282A
Contextual Info: Wtiat H E W L E T T 1 l/LM P A C K A R D Surface M ount RF Schottky D iodes in SOT-363 SC-70, 6 Lead Technical Data HSMS 280K /L /M /N /P /R HSMS 281K/L HSMS 2 8 2 K /L /M /N /P /R F eatu res • U nique co n figu ration s in su rfa ce m ount SOT-363 package

SII907

Abstract: 223S
Contextual Info: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8

s0318

Abstract: sot363 marking qs
Contextual Info: SÌ1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) -1 2 • TrenchFET Power MOSFETS: 1,8-V Rated • ESD Protected1 . 3000 V • Thermally Enhanced SC-70 Package I d (A ) rDS(on>(ß) 0.085 @ V GS = -4 .5 V

sot363 marking qs

Contextual Info: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package

Contextual Info: TfiJH H E W L E T T WL'eM PA C K A R D Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-386L HSMP 389L/R/T/U/V Features • Unique configurations in surface mount SOT-363 package - Add flexibility - Save board space - Reduce cost

NPN 3906

Abstract: TRANSISTOR MARKING TE SOT363
Contextual Info: MMDT3946 COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • • • • Collector current Ic = 200mA Lead free in comply with EU RoHS 2002/95/EC directives.

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) • Collector-emitter voltage V CE =40V 0.010(0.25) • Collector current I C = 600mA • / 

RQ TRANSISTOR

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMD12 NPN/PNP resistor-equipped transistor Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES • Transistors with different polarity

Contextual Info: DISCRETE SEMICONDUCTORS PUMH7 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Jun 29 Philips Sem iconductors 1999 Apr 22 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor

Contextual Info: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.

bc 494 pnp

Abstract: 847PN
Contextual Info: BC 847PN SIEMENS NPN/PNP Silicon AF Transistor Array * For A F input stages and driver applivations * High current gain * Low collector-emitter saturation voltage >Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

Contextual Info: TC0205AD Vishay Siliconix New Product Dual N- and P-Channel ±20-V Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS V N-Channel 20 r D S (o n) 2.0 @ VGs P-Channel lD(mA) (Q) = 4-5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @Vq s = -4 .5 V -1 8 0 5.0 @V qs = "2 .5 V

Contextual Info: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) 0.010(0.25) • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in compliance with EU RoHS 2011/65/EU directive

Contextual Info: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) 0.010(0.25) • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.

marking code AVN

Abstract: transistor K 2333 transistor ph 45 AN 6752
Contextual Info: DISCRETE SEMICONDUCTORS PUMB4 PNP resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB4

PUMX1

Abstract: marking code IC .ztz
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Preliminary specification NPN general purpose double transistor

Contextual Info: What HEW LETT mLUM P A C K A R D Surface Mount RF Schottky Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMS 280K /L /M /N /P/R HSMS 281K/L HSMS 282K /L /M /N /P /R Features • Unique configurations in surface mount SOT-363 package - increase flexibility