MARKING CODE JXS Search Results

sot-363 marking 3C

Abstract: maxim MARKING CODE 21 71179
Contextual Info: S ii 400_ Weiv Product Vishay Siliconix N-Channel 20-V D-S M OSFET PRODUCT SUMMARY r DS(on) (£2) b(A) 0.150 e V GS = 4.5 V 1.7 0.235 e V GS = 2.5 V 1.3 VDS(V) 20 SOT-363 SC-70 (6-LEADS) Marking Code XX £ Lot Traceability and Date Code — Part# Code

BAV170

Abstract: Marking code jxs Q62702-A920 MarKING Jxs sot23 JXs sot JXs SOT23
Contextual Info: Silicon Low Leakage Diode Array BAV 170 Low leakage applications ● Medium speed switching times ● Common cathode ● Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol

BAV170

Abstract: JXs sot
Contextual Info: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170

CLL2003

Contextual Info: Central" C LL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.

Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700*

A07004

Abstract: JXs sot
Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 « SOT-23 EH I M ° EH A07004

Contextual Info: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170

K 4005 transistor

Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
Contextual Info: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for

A1S diode

Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
Contextual Info: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS135 600 V • ^DS • Id 0.080 A • -^DS on 60 a • N channel • Depletion mode • High dynamic resistance • Available grouped in VGs(th) Type BSS 135 Ordering Code Pin C onfigu ration Marking Tape and Reel

8065S

Contextual Info: SIPMOS Small-Signal Transistor • • • • • • • BSS 149 Vx 200 V /D 0.35 A ^DS on 3-5 N channel Depletion mode High dynamic resistance Available grouped in Vqs^ Type Ordering Code BSS 149 Q67000-S252 Tape and Reel information Pin Gonfigu ration Marking Package

Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAV170

Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 ! , ,   Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

quartz HCJ

Abstract: quartz HCJ-20 JAUCH hcj 30
Contextual Info: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:51 Uhr Seite 39 2 H C0 . 0 0 0 J0 A actual size SMQ series • JXS 53 surface mount quartz crystal • features • high frequency stability type ■ ceramic/metal package type JXS 53 frequency 16.0 ~ 30.0 MHz fund. AT-cut

JXS63

Contextual Info: SMD Quartz Crystal • JXS63 4 Pad Version · 6.0 x 3.5 mm RoHS • ± 10 ppm type available ■ ceramic / metal package ■ wave soldering temperature: 260 °C max. actual size 2002/95/EC RoHS compliant General Data Pb free: pins / pads ESR series resistance Rs

JXS63

Contextual Info: SMD Quartz Crystal • JXS63 4 Pad Version · 6.0 x 3.5 mm RoHS • ± 10 ppm type available ■ ceramic / metal package ■ wave soldering temperature: 260 °C max. actual size 2011/65/EC RoHS compliant General Data Pb free: pins / pads ESR series resistance Rs

Contextual Info: SMD Quartz Crystal • JXS63 4 Pad Version · 6.0 x 3.5 mm RoHS • ± 10 ppm type available ■ ceramic / metal package ■ wave soldering temperature: 260 °C max. actual size 2002/95/EC RoHS compliant General Data Pb free: pins / pads ESR series resistance Rs

JXS53

Abstract: smd code 6a
Contextual Info: SMD Quartz Crystal • JXS53 4 Pad Version · 5.0 x 3.2 mm • ■ ■ ■ actual size ± 10 ppm type available EMI shielding possible by grounded lid reflow soldering temperature: 260 °C max. ceramic / metal package RoHS 2002/95/EC RoHS compliant General Data

jxs32

Abstract: Q-16.0-JXS32-12-30/50-T1-LF smd marking code 8A smd marking T1 crystal quartz 12 MHz JXS-32
Contextual Info: SMD Quartz Quartz Crystal Crystal • JXE • JXS32 63 4 Pad Version · 3.2 x 2.5 mm • ■ ■ ■ actual size ± 10 ppm type available EMI shielding possible by grounded lid reflow soldering temperature: 260 °C max. ceramic / metal package RoHS 2002/95/EC

quartz HCJ

Contextual Info: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:51 Uhr Seite 37 2 H C0 . 0 0 0 J0 A actual size SMQ series • JXS 63 surface mount quartz crystal features • high frequency stability type ■ ceramic/metal package type JXS 63 frequency 12.0 ~ 40.0 MHz fund. AT-cut

JXS75

Abstract: 30-FU
Contextual Info: SMD Quartz Crystal • JXS75 4 Pad Version · 7.5 x 5.2 mm • ■ ■ ■ actual size ± 10 ppm type available EMI shielding possible by grounded lid reflow soldering temperature: 260 °C max. ceramic / metal package RoHS 2002/95/EC RoHS compliant General Data

Contextual Info: SMD Quartz Crystal • JXS75 4 Pad Version · 7.5 x 5.2 mm • ■ ■ ■ actual size ± 10 ppm type available EMI shielding possible by grounded lid reflow soldering temperature: 260 °C max. ceramic / metal package RoHS 2002/95/EC RoHS compliant General Data

Contextual Info: SMD Quartz Quartz Crystal Crystal • JXE • JXS22 63 4 Pad Version · 2.5 x 2.0 mm • ■ ■ ■ actual size ± 10 ppm type available EMI shielding possible by grounded lid reflow soldering temperature: 260 °C max. ceramic / metal package RoHS 2002/95/EC

jxs32

Abstract: Crystal 32 MHz 12 pF quartz 20 MHZ
Contextual Info: SMD Quartz Quartz Crystal Crystal • JXE • JXS32 63 4 Pad Version · 3.2 x 2.5 mm • ■ ■ ■ actual size ± 10 ppm type available EMI shielding possible by grounded lid reflow soldering temperature: 260 °C max. ceramic / metal package RoHS 2002/95/EC