MARKING CODE DUAL GATE MOS Search Results
MARKING CODE DUAL GATE MOS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
LQW18CN4N9D0HD | Murata Manufacturing Co Ltd | Fixed IND 4.9nH 2600mA POWRTRN | |||
LQW18CNR33J0HD | Murata Manufacturing Co Ltd | Fixed IND 330nH 630mA POWRTRN |
MARKING CODE DUAL GATE MOS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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specifications of MOSFET
Abstract: on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02
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OT-563 OT-883L TLM621H CMLDM7003) 280mA, OT-563 CMLDM7003 CMLDM8002A CMLDM7002A specifications of MOSFET on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02 | |
CMLDM7005
Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
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CMLDM7005 CMLDM8005 CMLDM7585 650mA OT-563 OT-563 CMLDM7005 Power MOSFET p-Channel n-channel dual CMLDM8005 TR | |
PB CWDM305P
Abstract: CWDM305P marking code 8 lead soic package CWDM305N
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CWDM305N CWDM305P CWDM305ND CWDM305PD CWDM305N, CWDM305P, CWDM305ND, CWDM305PD C305N C503P PB CWDM305P CWDM305P marking code 8 lead soic package CWDM305N | |
Contextual Info: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual, |
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CWDM305P CWDM305PD CWDM305ND CWDM305ND CWDM305P CWDM305PD | |
DIODE l02
Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
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CMLDM7002A CMLDM7002AJ* CMLDM7002AJ 2N7002 CMLDM7002A: 200mA, DIODE l02 code l02 2n7002 pinout marking 02J sot transistor pinout marking l02 | |
marking c08
Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
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CMLDM8002A CMLDM8002AJ OT-563 CMLDM8002A: CMLDM8002AJ: CMLDM8002A CMLDM8002AJ CMLDM8002AJ, 500mA marking c08 MARKING CODE 24 TRANSISTOR | |
Contextual Info: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode P-Channel Field Effect Transistors, manufactured by the |
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CMLDM8002A CMLDM8002AJ CMLDM8002AJ, OT-563 500mA 500mA, | |
CMLDM7005RContextual Info: CMLDM7005 CMLDM7005R SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver |
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CMLDM7005 CMLDM7005R CMLDM7005. CMLDM7005: CMLDM7005R: OT-563 350mW 500mA | |
CMLDM7002AJ
Abstract: 2N7002 CMLDM7002A marking 02J
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CMLDM7002A CMLDM7002AJ OT-563 CMLDM7002AJ 2N7002 200mA, 400mA CMLDM7002A marking 02J | |
CMLDM7003EContextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current |
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CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE 28-January CMLDM7003E | |
marking code C3J
Abstract: C3j marking c30 C3J code C3J marking c3j CMLDM7003 CMLDM7003J sot transistor pinout
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CMLDM7003 CMLDM7003J CMLDM7003: CMLDM7003J: OT-563 17-October marking code C3J C3j marking c30 C3J code C3J marking c3j sot transistor pinout | |
C3j marking
Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
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CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: 26-June C3j marking code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J | |
Contextual Info: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel |
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CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: | |
S 170 MOSFET TRANSISTORContextual Info: Central CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTI DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R CMLDM7002A and CMLDM7002AJ are special dual versions of the 2N7002 Enhancement-mode N-Channel Field Effect |
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CMLDM7002A CMLDM7002AJ* CMLDM7002AJ 2N7002 CMLDM7002A: OT-563 S 170 MOSFET TRANSISTOR | |
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CMLDM8002A
Abstract: CMLDM8002AJ CG8 marking
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CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, CMLDM8002A: CMLDM8002AJ: APPLI10V, CMLDM8002AJ CG8 marking | |
Contextual Info: CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual chip P-Channel enhancement-mode MOSFETs, manufactured by the P-Channel DMOS Process, |
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CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, CMLDM8002A: CMLDM8002AJ: 200mA | |
CMLDM8002A
Abstract: CMLDM8002AJ marking cg8
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CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, 200mA CMLDM8002AJ marking cg8 | |
Contextual Info: CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual chip enhancement-mode P-Channel MOSFETs, manufactured by the P-Channel DMOS Process, |
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CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, CMLDM8002A: CMLDM8002AJ: 200mA | |
Contextual Info: CMLDM8002A CMLDM8002AG* CMLDM8002AJ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual chip Enhancement-mode P-Channel Field Effect |
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CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, CMLDM8002A: CMLDM8002AJ: 200mA | |
sot transistor pinout
Abstract: CMLDM7003E CMLDM7003JE C73 MARKING CODE 10 marking code dual transistor
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CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE 18-January sot transistor pinout CMLDM7003E C73 MARKING CODE 10 marking code dual transistor | |
Contextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current |
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CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE 18-January | |
CMLDM7003E
Abstract: CMLDM7003JE CMLDM7003J
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CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE CMLDM7003E CMLDM7003E: CMLDM7003JE: 200mA CMLDM7003J | |
CMLDM7003
Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
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CMLDM7003 CMLDM7003G* CMLDM7003J OT-563 CMLDM7003 CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G | |
Contextual Info: CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305ND is a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient |
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CWDM305ND CWDM305ND |