MARKING CODE DIODE V3 Search Results

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

marking A45

Abstract: ERC13 mla diode
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight

diode A44

Abstract: marking A45 ERC13
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ fc iv • Marking Compact size, lightweight High reliability

HBAT-540C temperature data sheet from agilent

Abstract: diode IN 5402 540b diode Marking code v3 AN1124 ct 4060 marking code 4e marking code V3 HBAT-5400 pn junction diode ideality factor
Contextual Info: High Performance Schottky Diode for Transient Suppression Technical Data HBAT-5400/-5402 HBAT-540B/-540C HBAT-540E/-540F Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View Description • Low Capacitance

xgold

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany

HBAT540BBLK

Contextual Info: Agilent HBAT-5400, 5402, 540B, 540C, 540E, 540F High Performance Schottky Diode for Transient Suppression Data Sheet Features • Ultra-low Series Resistance for Higher Current Handling • Low Capacitance • Low Series Resistance Description The HBAT-5400 series of Schottky

HBAT-540x

Contextual Info: High Performance Schottky Diode for Transient Suppression Technical Data HBAT-5400/-5402 HBAT-540B/-540C HBAT-540E/-540F Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View Description • Low Capacitance

B2X84C5V1

Abstract: B2X84C4V3 zener diode Marking code v3 Zener diode wz 210 BZX64 diode ZENER Y6 marking BZX64C3V0 Y6 ZENER DIODE Zener diode wz 130 BZX84C47
Contextual Info: Central" BZX84C2V4 THRU BZX84C47 Semiconductor Corp. 350mW ZENER DIODE 2.4 VOLTS THRU 47 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR BZX84C2V4 Series Silicon Zener Diode is a high quality volt­ age regulator for use in industrial, commercial, entertainment and computer applications.

diode Marking code v3

Contextual Info: S1104 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption

diode Marking code v3

Abstract: ,diode Marking code v3 marking code diode V3 SLD202U SLD202U-3 SLD202V-3 820 nm laser diode
Contextual Info: SLD202U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description SLD202U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD202U-3 M-221 SLD202V-3 M-248 Features High power laser diode with the excellent general

SLD201V-3

Abstract: diode Marking code v3 SLD201V3 ,diode Marking code v3 SLD201U-3
Contextual Info: SLD201U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD201U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD201U-3 M-221 SLD201V-3 M-248 Features High power laser diode with the excellent general

Contextual Info: V3P6 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package Available • Ideal for automated placement TMBS eSMP® Series • Trench MOS Schottky technology • Low power losses, high efficiency

H0263

Abstract: ETT4
Contextual Info: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ f c iv • Marking Compact size, lightweight

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

TN2404K-T1-E3

Abstract: tn2404kt1e3 TN2404K BS107KL BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

diode Marking code v3

Contextual Info: S1101 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption

Contextual Info: V3PAL45 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm TMBS • Ideal for automated placement SMPATM • Trench MOS Schottky technology • Low power losses, high efficiency

SI1473DH

Abstract: marking R5* sc-70 N2 SC70 tsop6 marking DC 74371 N2 SC70 6pin MSOP-8 marking AX PIN diode Pspice model V30114 EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
Contextual Info: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 1.6 0.145 at VGS = - 4.5 V - 1.6 VDS (V) - 30 Qg (Typ) 4.1 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load Switch for Portable Devices

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

bat54 NXP Diodes

Abstract: BAT54 NXP BAT54A,215, NXP
Contextual Info: SO T2 3 BAT54 series Schottky barrier diodes Rev. 5 — 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic

vishay siliconix code marking

Abstract: TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

vishay siliconix code marking

Abstract: marking code vishay SILICONIX SILICONIX MARKING TN2404KT1E3 BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

Contextual Info: PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E VCES = 600V C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100°C Features • Low VCE on Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA