MARKING CODE DIODE CMPAK Search Results

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

1pw diode

Abstract: Hitachi DSA002753
Contextual Info: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743C Z 4th.Edition. June 1999 Features • • • Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Small package (CMPAK)

Hitachi 2SJ

Abstract: Hitachi DSA002752
Contextual Info: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • • • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) 4 V gate drive device. Small package (CMPAK)

2SK3288

Abstract: 2SK3378 DSA003644
Contextual Info: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =2.7 typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK)

2SJ575

Abstract: 2SJ576 marking code diode CMPAK Hitachi 2SJ DSA003643
Contextual Info: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)

2SK3288

Abstract: 2SK3378 Hitachi DSA00384 DSA0038471
Contextual Info: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =2.7 Ω typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK)

2SJ575

Abstract: 2SJ576 Hitachi 2SJ Hitachi DSA00397
Contextual Info: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)

2SK3287

Abstract: 2SK3289 DSA003721 DA300
Contextual Info: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743C Z 4th.Edition. June 1999 Features • Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (CMPAK)

Hitachi DSA002753

Contextual Info: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS =2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) 4 V gate drive device. Small package (CMPAK)

PF0131

Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
Contextual Info: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231

cmpak6

Abstract: SMD MARKING RFC 1SV70 TBB1010 TBB1010KMTL-E
Contextual Info: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0500 Rev.5.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2 Suitable for World Standard Tuner RF amplifier.

ADE-208-1607B

Abstract: 1607B 1SV70 TBB1010 TBB1010KMTL-E
Contextual Info: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0400 Previous ADE-208-1607B Rev.4.00 Aug.10.2005 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2

Hitachi DSA002753

Contextual Info: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) 2.5 V gate drive device. Small package (CMPAK)

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

MOS TECHNOLOGY INC

Abstract: 1SV70 TBB1004 TBB1004DMTL-E
Contextual Info: TBB1004 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0842-1100 Rev.11.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

1SV70

Abstract: TBB1005 TBB1005EMTL-E
Contextual Info: TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

smd code marking BM

Abstract: RG 56 smd diode marking BM 1SV70 TBB1002 TBB1002BMTL-E
Contextual Info: TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

2SJ586

Abstract: Hitachi 2SJ Hitachi DSA00396
Contextual Info: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Hitachi 2SJ

Abstract: Hitachi DSA002752
Contextual Info: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 4.1 Ω typ. (VGS = -4 V , ID = -50 mA) RDS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) 2.5 V gate drive device. Small package (CMPAK)

1SV70

Abstract: MARKING CODE SMD IC g1 cmpak6 SMD MARKING CODE hitachi HITACHI RF EDITION cmpak6 marking Hitachi DSA0076 TBB1001
Contextual Info: TBB1001 Twin Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-986E Z 6th. Edition Dec. 2000 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

2SJ586

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

2SK3348

Abstract: DSA003643
Contextual Info: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 1.6 typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 typ. (VGS = 2.5 V , I D = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)