MARKING CODE D2C SMD Search Results
MARKING CODE D2C SMD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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MARKING CODE D2C SMD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks |
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256mbmt49h8m32mt49h16m16144-ball+3 | |
BA6A
Abstract: marking code d2c smd
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256mb09005aef81121545/source09005aef810c0ffc256mbx16x32rldram+2 | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks |
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256mb09005aef81121545/source09005aef810c0ffc256mbx16x32rldram | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks |
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256mb09005aef81121545/source09005aef810c0ffc256mbx16x32rldram | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/ |
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256mbmt49h8m32mt49h16m1609005aef81121545/source+2 | |
WL 431
Abstract: 431 SMD CODE MARKING smd marking AB 6 PIN INFINEON PART MARKING smd transistor d4d RC-5 receiver transistor smd code marking 431 transistor SMD DK SMD CODE N10 smd code marking wl
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256mbmt49h8m32mt49h16m1609005aef81121545/source+12 | |
smd transistor marking HT1
Abstract: 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11
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256mbmt49h8m32mt49h16m16144-ball+9 | |
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Contextual Info: SIEMENS 3.3V 4M X 4-Bit Dynamic RAM 2k & 4k-Refresh HYB 311 6400BJ/BT L -50/-60/-70 HYB 3117400BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 ^RAC RAS access time |
OCR Scan |
6400bj/bt3117400bj/bt3117400bj/bt-503117400bj/bt-60+6 | |
smd diode schottky code marking 2U
Abstract: smd wb3 smd diode marking codes 2U smd marking WB3 smd wb1 smd diode schottky code marking 2F smd diode wb1 marking 3U 3T 3C diode wb3 smd code SMD marking CODE 2U
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256mbmt49h8m32mt49h16m16144-ball+10 | |
MMB0 REV D
Abstract: ADS1256 SBAU090C pc motherboard schematics ADS1255 OPA350 REF5025 SBAS288 lab POWER SUPPLY schematics switched power supply ac dc
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sbau090cads1256evmads1256evm-pdkads1256+9 | |
marking d6bContextual Info: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144 Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks |
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256mb09005aef810c0ffc256mbx16x32rldrammarking d6b | |
BA5 marking
Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
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288mbmt49h16m18cmt49h32m9c144-ball+12 | |
MT49H16M18CContextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O |
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288mb09005aef80a41b59/zip09005aef811ba111mt49h8m18c+1 | |
MT49H16M18CContextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O |
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288mbclo68-3900mt49h16m18c | |
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MT49H16M18CContextual Info: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) |
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288mbmt49h16m18c09005aef80a41b59/source09005aef811ba111+1 | |
15READ
Abstract: marking ba5 MT49H8M18C MT49H16M18C
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288mbmt49h16m18c09005aef80a41b59/source09005aef811ba111+3 | |
smd dk qk
Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
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288mbclo68-3900mt49h16m18csmd dk qk+4 | |
MT49H16M18CContextual Info: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O |
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288mbmt49h8m18cmt49h16m18c | |
SMD d1c
Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
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288mbclo68-3900mt49h16m18csmd d1c+3 | |
on digital code lock using vhdl mini pr
Abstract: XC2V3000-BG728 ternary content addressable memory VHDL XC2V6000-ff1152 TRANSISTOR 841 toshiba smd marking code transistor land pattern BGA 0,50 XC2V3000-FG676 BT 342 project smd marking code mfw
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xc2064xc3090xc4005xc5210+11 | |
RAM16X8
Abstract: verilog hdl code for triple modular redundancy 37101 verilog/verilog code for lvds driver xc2v3000fg sot 23-5 marking code H5 BT 342 project xc2v250cs144 XC2V3000FF1152 fpga JTAG Programmer Schematics
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xc2064xc3090xc4005xc5210+10 | |
wireless power transfer using em waves matlab simulink
Abstract: PCB mounted 230 V relay Virtex-II FF1152 Prototype Board sot 23-5 marking code H5 BT 342 project Chirp modulation ber performance vhdl code for TRAFFIC LIGHT CONTROLLER using stat Motorola diode SMD code B13 xilinx vhdl code for 555 timer MARKING SMD IC CODE 8-pin
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ug012xc2064xc3090xc4005+12 | |
WD1002-WX1
Abstract: WD11C00 wd1010a WD1793 WD1003-WAH WD2010 WD9216 WD1772 pmi amp 01 WD1002S-WX2
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OCR Scan |
wd1002-wx1wd11c00wd1010awd1793+6 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |