MARKING CODE AFL Search Results

Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C

A129 marking code

Abstract: 5F marking
Contextual Info: ERB38 o .8A : Outline Drawings r4 * - Y FAST RECOVERY DIODE • t t f t : F e a tu re s :5F : Marking Su p e r high speed sw itching • 9 - > * y W E fie1 il' Ì 7- 3-K : à Color code : White Low V F in turn on • AfltM tt H igh reliability Abridged type name

IMBT4403

Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Contextual Info: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C

RTC1005

Contextual Info: N AflER PH IL IP S/ D IS C R ET E DbE D • MAINTENANCE TYPE for new design use PTB23003X _ GGS3G31 QGISDflS T ■ A PKB12005lT 3 1 ^ 7 C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

SMD CODE 77p

Abstract: S14 SMD BAS70-07 BAS70-70 PINNING-SOT143 A2 DIODE SMD CODE MARKING A2 marking diode SOT143 smd marking s14
Contextual Info: • t.bS3T31 □□2M3D7 bfifi H A P X Philips Semiconductors Product specification N AflER P H I L I P S / D I S C R E T E b7E B Schottky barrier diodes FEATURES BAS70-07 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT • Low turn-on and high breakdown

Contextual Info: • bbSB^Bl Q025flfl4 b33 H A P X N AflER PHILIPS/D ISCR ETE PM BT6428 PM BT6429 b7E D _ _ SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD) plastic envelope intended for application in thick and

Contextual Info: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications

AFL Marking

Abstract: MARKING CODE AFL MSOP8 Part marking SUFFIX AFL200-00E AFL002-10E
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

MARKING CODE AFL

Abstract: MSOP8 Part marking TDFN-6
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

BAL99

Abstract: Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE
Contextual Info: • Philips Sem iconductors . ^ bbSBTBl aaaMESM 513 H A P X _ _ — N AflER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Contextual Info: r r i m LTC1426 m TECHNOLOGY Micropower Dual 6-Bit PWM DAC F€OTUR€S D€SCRIPTIOn • Wide Supply Range: 2.7V < V^c ^ 5.5V ■ Wide Reference Voltage Range: OV to 5.5V The LTC 1426 is a dual micropower 6-bit PWM DAC featuring versatile PWM outputs and aflexible pushbutton

Contextual Info: AFL Series 11409 Valley View Road Eden Prairie, MN 55344 Phone: 952 829-9217 Fax: (952) 996-1600 Data Sheet NVE AFLxxx-xx Low Power Low Voltage Digital Switch • • • • • ● • Low Voltage Operation Down to 0.9V Low Current Consumption Digital Switch Output

ALG TRANSISTOR

Contextual Info: bbSB'lBl Q024547 02b * A P X N AflER PHILIPS/DISCRETE b7E D _ J BCV62; 62A BCV62B; 62C V SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SOT-143 plastic envelope, designed for use in applications where the working p oint must be independent o f temperature.

MARKING CODE AFL

Abstract: MSOP8 Part marking
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

m38510/10404

Abstract: 55115 marking code YS SMD E1713 5962-E1713-2
Contextual Info: REVISIONS LTR DESCRIPTION DATE yr -m o -oa APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PM 1C N/A STANDARDIZED MILITARY DRAWING PREPARED BY J AflpA*,(k . SCKED B Y A _ DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 rj MICROCIRCUIT, LINEAR, DUAL, DIFFERENTIAL LINE

Contextual Info: PDR5G 5A GLASS PASSIVATED RECTIFIER PowerDI 0/o5 Features X Glass Passivated Die Construction X Low Leakage Current X Lead Free Finish, RoHS i— D — i Ub2> T T i 1 Com pliant Note 1) X "Green" Molding Compound (No Br, Sb) X Qualified to AE C -Q 101 Standards for High

Contextual Info: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

Contextual Info: PDU420 4A ULTRA-FAST RECOVERY RECTIFIER PowerDI 0/o5 Features Mechanical Data I Glass Passivated Die Construction I Case: PowerDI 5 1 Ultra-Fast Recovery Time for High Efficiency 1 High M aximum Junction Tem perature I I I I I I Case M aterial: M olded Plastic, GreenîM olding

OR1 marking

Abstract: 3x62 NICHICON lot month
Contextual Info: ALUMINUM v7rv / ELECTROLYTIC nichicon CAPACITORS 5.5mmL Chip Type \ series m Chip type with 5.5mm height. m Designed for surface mounting on high density PC board. m Applicable to automatic mounting machine using carrier tape. m Load life of 2000 hours at 85°C.

Ceramic Capacitors 104

Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Contextual Info: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

MM5829-2700

Abstract: MM8030-2600 ANCL11G57SAA165 ANCL11G57 CSR BC5MM MICROCHIP 2012 SMD MARKING AS-M15SA-R CA0TB MEDIATEK z5v cap
Contextual Info: MURATA PRODUCTS 2010-2011 2010-2011 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

panasonic transistor marking pr

Abstract: D 2058 AN26214A AN262 marking nb 4-Layer PE-film panasonic packing label
Contextual Info: Regulations No : SC3S1305 Total pages Page 5 1 PACKAGE STANDARDS Package code XLGA011-W-1612-AN26214A Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established: 2006-03-15 Revised : - Established by Applied by Checked by Prepared by S. Okada