MARKING CODE 75C Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

5bge

Abstract: 5bgm 33cA 5BFz
Contextual Info: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power DEVICE MARKING CODE 5.0SMDJ PART NUMBER 5.0SMDJ 20A Uni-polar Bi-polar REVERSE BREAKDO BREAKDO MAXIMUM REVERSE PEAK WN WN STANDTEST CLAMPING LEAKAGE

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

Contextual Info: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:52 Uhr Seite 69 75C 27. 310 00 A actual size VCXO JV75 • 3.3 Volt voltage controlled crystal oscillators features • package height 2.0 mm max. ■ tristate function type JV75 C305 JV75 B305 JV75 C310 frequency JV75 B310

Contextual Info: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:52 Uhr Seite 71 75C 27. 510 00 A actual size VCXO JV75 • 5.0 Volt voltage controlled crystal oscillators features • package height 2.0 mm max. ■ tristate function type JV75 C505 JV75 B505 JV75 C510 frequency JV75 B510

TQ5300

Abstract: TQG 14.31818 kony 8.000000 kony 30mhz crystal oscillator HC49U70 SUNNY 4.194304 KONY hc49s 6MHZ HC49U 16.000000 Mhz kony vcxo KONY crystal
Contextual Info: Ordering information Return to product overview Resonator SMD All information subject to change Type CTT CV-MX Tape & Reel RoHS Conform External Dimensions Unit: mm Specifications Holder Type CTT CV-MX with Tape & Ree Frequency Range 10.000000 MHz internal capacitance C1, C2

avago marking bk

Abstract: AVAGO MARKING E4 AN1124 MARKING 313 sc70 part marking ab sc-70 marking b5 sc70 marking code e5 sot363
Contextual Info: HSMS-281x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to

AV02-0533EN

Abstract: MARKING a4 SOT-23 diode marking code C3 sot23 marking code e5 sot363 HSMs-2 HSMS-282 AVAGO DATE CODE MARKING 0/AVAGO DATE CODE MARKING
Contextual Info: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to

avago marking bk

Abstract: AN1124 marking code nt jedec SC-70-6 package marking code tc sot 363 sc-70 package pcb layout sc70-3 PCB PAD part marking ab sc-70 sot 23 marking code NT
Contextual Info: HSMS-281x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to

AN1124

Abstract: 2805 diode bridge AK 061 jedec SC-70-6 package marking code nt A4 SOT363 diode marking code C3 sot23 marking code 54 marking code tc sot 363 sc-70 package pcb layout
Contextual Info: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to

Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

fm18W08-pg

Abstract: FM18W08
Contextual Info: FM18W08 PDIP 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: n FM16W08 PDIP 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process

EXS00A-CS00871

Abstract: NX3225 crystal EXS10B-08844A EXS10B NX3225 NX3225SA Nihon Dempa Kogyo TRACE CODE ON BOX PACKING LABEL EXH11B-00378 EXS00ACS00
Contextual Info: Document No. EXS10B-08844A 1/8 SPECIFICATION Customer: General Spec Receipt Item: CRYSTAL UNIT Type: NX3225SA Nominal Frequency: 114.285 MHz Customer’s Spec. No.: NDK Spec. No.: EXS00A-CS00871 Charge: Sales Sales.Dept.1 Y.Shinohara Tel. 81- 0 3-5453-6737

012 6V8A

Abstract: 56A schottky sma P4SMA250C P4SMA130CA
Contextual Info: WILLAS FM120-M+ THRU 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Series P4SMAFM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMA DO-214AC PACKAGE SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers

CMSDM7590

Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
Contextual Info: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

FM16W08

Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM16W08

Abstract: FM16W08-SG AEC-Q100-002 MS-013
Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process